These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

163 related articles for article (PubMed ID: 35604780)

  • 1. Low-Temperature Synthesis of Boron Nitride as a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices.
    Lu Z; Zhu M; Liu Y; Zhang G; Tan Z; Li X; Xu S; Wang L; Dou R; Wang B; Yao Y; Zhang Z; Dong J; Cheng Z; Chen S
    ACS Appl Mater Interfaces; 2022 Jun; 14(22):25984-25992. PubMed ID: 35604780
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications.
    Sattari-Esfahlan SM; Kim HG; Hyun SH; Choi JH; Hwang HS; Kim ET; Park HG; Lee JH
    ACS Appl Mater Interfaces; 2023 Feb; 15(5):7274-7281. PubMed ID: 36719071
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation.
    Liu D; Chen X; Yan Y; Zhang Z; Jin Z; Yi K; Zhang C; Zheng Y; Wang Y; Yang J; Xu X; Chen J; Lu Y; Wei D; Wee ATS; Wei D
    Nat Commun; 2019 Mar; 10(1):1188. PubMed ID: 30867418
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics.
    Lee J; Ravichandran AV; Mohan J; Cheng L; Lucero AT; Zhu H; Che Z; Catalano M; Kim MJ; Wallace RM; Venugopal A; Choi W; Colombo L; Kim J
    ACS Appl Mater Interfaces; 2020 Aug; 12(32):36688-36694. PubMed ID: 32667778
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.
    Park H; Shin GH; Lee KJ; Choi SY
    Nanoscale; 2018 Aug; 10(32):15205-15212. PubMed ID: 29808902
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition.
    Wang G; Huang J; Zhang S; Meng J; Chen J; Shi Y; Jiang J; Li J; Cheng Y; Zeng L; Yin Z; Zhang X
    Small; 2023 Jun; 19(24):e2301086. PubMed ID: 36919923
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications.
    Moon S; Chang SJ; Kim Y; Okello OFN; Kim J; Kim J; Jung HW; Ahn HK; Kim DS; Choi SY; Lee J; Lim JW; Kim JK
    ACS Appl Mater Interfaces; 2021 Dec; 13(49):59440-59449. PubMed ID: 34792331
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook.
    Kim JY; Ju X; Ang KW; Chi D
    ACS Nano; 2023 Feb; 17(3):1831-1844. PubMed ID: 36655854
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Hexagonal MoTe
    Sirota B; Glavin N; Krylyuk S; Davydov AV; Voevodin AA
    Sci Rep; 2018 Jun; 8(1):8668. PubMed ID: 29875367
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films.
    Iqbal MW; Iqbal MZ; Khan MF; Shehzad MA; Seo Y; Park JH; Hwang C; Eom J
    Sci Rep; 2015 Jun; 5():10699. PubMed ID: 26030008
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Atomically Thin Hexagonal Boron Nitride and Its Heterostructures.
    Zhang J; Tan B; Zhang X; Gao F; Hu Y; Wang L; Duan X; Yang Z; Hu P
    Adv Mater; 2021 Feb; 33(6):e2000769. PubMed ID: 32803781
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications.
    Yi K; Liu D; Chen X; Yang J; Wei D; Liu Y; Wei D
    Acc Chem Res; 2021 Feb; 54(4):1011-1022. PubMed ID: 33535000
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Tailoring amorphous boron nitride for high-performance two-dimensional electronics.
    Chen CY; Sun Z; Torsi R; Wang K; Kachian J; Liu B; Rayner GB; Chen Z; Appenzeller J; Lin YC; Robinson JA
    Nat Commun; 2024 May; 15(1):4016. PubMed ID: 38740890
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells.
    Cho AJ; Kwon JY
    ACS Appl Mater Interfaces; 2019 Oct; 11(43):39765-39771. PubMed ID: 31577117
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Clean BN-Encapsulated 2D FETs with Lithography-Compatible Contacts.
    Liang B; Wang A; Zhou J; Ju S; Chen J; Watanabe K; Taniguchi T; Shi Y; Li S
    ACS Appl Mater Interfaces; 2022 Apr; 14(16):18697-18703. PubMed ID: 35436083
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Direct, Transfer-Free Growth of Large-Area Hexagonal Boron Nitride Films by Plasma-Enhanced Chemical Film Conversion (PECFC) of Printable, Solution-Processed Ammonia Borane.
    Liu T; Premasiri K; Sui Y; Zhan X; Mustafa HAB; Akkus O; Zorman CA; Gao XPA; Sankaran RM
    ACS Appl Mater Interfaces; 2018 Dec; 10(50):43936-43945. PubMed ID: 30462491
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Synthesis of large-area multilayer hexagonal boron nitride for high material performance.
    Kim SM; Hsu A; Park MH; Chae SH; Yun SJ; Lee JS; Cho DH; Fang W; Lee C; Palacios T; Dresselhaus M; Kim KK; Lee YH; Kong J
    Nat Commun; 2015 Oct; 6():8662. PubMed ID: 26507400
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Thermal Conductance of the 2D MoS
    Liu Y; Ong ZY; Wu J; Zhao Y; Watanabe K; Taniguchi T; Chi D; Zhang G; Thong JT; Qiu CW; Hippalgaonkar K
    Sci Rep; 2017 Mar; 7():43886. PubMed ID: 28262778
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Chemical Interaction-Guided, Metal-Free Growth of Large-Area Hexagonal Boron Nitride on Silicon-Based Substrates.
    Behura S; Nguyen P; Debbarma R; Che S; Seacrist MR; Berry V
    ACS Nano; 2017 May; 11(5):4985-4994. PubMed ID: 28441003
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Transferrable AlGaN/GaN High-Electron Mobility Transistors to Arbitrary Substrates via a Two-Dimensional Boron Nitride Release Layer.
    Motala MJ; Blanton EW; Hilton A; Heller E; Muratore C; Burzynski K; Brown JL; Chabak K; Durstock M; Snure M; Glavin NR
    ACS Appl Mater Interfaces; 2020 May; 12(19):21837-21844. PubMed ID: 32295338
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.