These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

143 related articles for article (PubMed ID: 35630940)

  • 1. Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation.
    Cui P; Zeng Y
    Nanomaterials (Basel); 2022 May; 12(10):. PubMed ID: 35630940
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs.
    Cui P; Lv Y; Fu C; Liu H; Cheng A; Luan C; Zhou Y; Lin Z
    Sci Rep; 2018 Aug; 8(1):12850. PubMed ID: 30150625
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications.
    Cui P; Zeng Y
    Sci Rep; 2022 Oct; 12(1):16683. PubMed ID: 36202953
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.
    Lv Y; Lin Z; Meng L; Luan C; Cao Z; Yu Y; Feng Z; Wang Z
    Nanoscale Res Lett; 2012 Aug; 7(1):434. PubMed ID: 22856465
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.
    Chien CY; Wu WH; You YH; Lin JH; Lee CY; Hsu WC; Kuan CH; Lin RM
    Nanoscale Res Lett; 2017 Dec; 12(1):420. PubMed ID: 28629208
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.
    Hardy MT; Storm DF; Katzer DS; Downey BP; Nepal N; Meyer DJ
    J Vis Exp; 2016 Nov; (117):. PubMed ID: 27911417
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range.
    Wang S; Zhou Q; Chen K; Bai P; Wang J; Zhu L; Zhou C; Gao W; Zhang B
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057371
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization.
    Li X; Wang M; Zhang J; Gao R; Wang H; Yang W; Yuan J; You S; Chang J; Liu Z; Hao Y
    Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241665
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor.
    Baek SH; Lee GW; Cho CY; Lee SN
    Sci Rep; 2021 Mar; 11(1):7172. PubMed ID: 33785795
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Steep Switching of In
    Chen PG; Chen KT; Tang M; Wang ZY; Chou YC; Lee MH
    Sensors (Basel); 2018 Aug; 18(9):. PubMed ID: 30149580
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
    Chang SJ; Kim DS; Kim TW; Bae Y; Jung HW; Choi IG; Noh YS; Lee SH; Kim SI; Ahn HK; Kang DM; Lim JW
    Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903774
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.
    Bagnall KR; Moore EA; Badescu SC; Zhang L; Wang EN
    Rev Sci Instrum; 2017 Nov; 88(11):113111. PubMed ID: 29195348
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN
    Gao X; Guo H; Wang R; Pan D; Chen P; Chen D; Lu H; Zhang R; Zheng Y
    Micromachines (Basel); 2022 Aug; 13(9):. PubMed ID: 36144019
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.
    Chang SJ; Kim DS; Kim TW; Lee JH; Bae Y; Jung HW; Kang SC; Kim H; Noh YS; Lee SH; Kim SI; Ahn HK; Lim JW
    Nanomaterials (Basel); 2020 Oct; 10(11):. PubMed ID: 33143313
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors.
    Cui P; Mo J; Fu C; Lv Y; Liu H; Cheng A; Luan C; Zhou Y; Dai G; Lin Z
    Sci Rep; 2018 Jun; 8(1):9036. PubMed ID: 29899499
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Piezotronic Effect Modulated Flexible AlGaN/GaN High-Electron-Mobility Transistors.
    Zhu J; Zhou X; Jing L; Hua Q; Hu W; Wang ZL
    ACS Nano; 2019 Nov; 13(11):13161-13168. PubMed ID: 31633906
    [TBL] [Abstract][Full Text] [Related]  

  • 18. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
    Hong S; Rana Au; Heo JW; Kim HS
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
    [TBL] [Abstract][Full Text] [Related]  

  • 19. A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure.
    Sun Z; Huang H; Sun N; Tao P; Zhao C; Liang YC
    Micromachines (Basel); 2019 Dec; 10(12):. PubMed ID: 31817374
    [TBL] [Abstract][Full Text] [Related]  

  • 20. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
    Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
    Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.