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67. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition. Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825 [TBL] [Abstract][Full Text] [Related]
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