These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

131 related articles for article (PubMed ID: 35744515)

  • 1. Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors.
    Lee G; Ha J; Kim K; Bae H; Kim CE; Kim J
    Micromachines (Basel); 2022 Jun; 13(6):. PubMed ID: 35744515
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET.
    Li H; Yu R; Zhong Y; Yao R; Liao X; Chen X
    Micromachines (Basel); 2019 May; 10(5):. PubMed ID: 31083371
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example.
    Wei Z; Fu H; Yan X; Li S; Zhang L; Wei J; Liu S; Sun W; Wu W; Bai S
    Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057175
    [TBL] [Abstract][Full Text] [Related]  

  • 4. A 5-kV pulse generator with a 100-kV/µs slew rate based on series-connected 1700-V SiC MOSFETs for electrical insulation tests.
    Okuda T; Nishimura Y; Nishioka K; Kishimoto S; Kikuchi Y; Nakamura T
    Rev Sci Instrum; 2021 Nov; 92(11):114705. PubMed ID: 34852512
    [TBL] [Abstract][Full Text] [Related]  

  • 5. TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode.
    Wang R; Guo J; Liu C; Wu H; Huang Z; Hu S
    Micromachines (Basel); 2022 Oct; 13(10):. PubMed ID: 36296094
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.
    Zhu S; Liu T; Fan J; Maddi HLR; White MH; Agarwal AK
    Materials (Basel); 2022 Aug; 15(17):. PubMed ID: 36079378
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High-voltage SiC power devices for improved energy efficiency.
    Kimoto T
    Proc Jpn Acad Ser B Phys Biol Sci; 2022; 98(4):161-189. PubMed ID: 35400694
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Normally-off β-Ga
    Jang CH; Atmaca G; Cha HY
    Micromachines (Basel); 2022 Jul; 13(8):. PubMed ID: 36014107
    [TBL] [Abstract][Full Text] [Related]  

  • 9. On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET.
    Ha J; Lee G; Bae H; Kim K; Han JW; Kim J
    Micromachines (Basel); 2022 Aug; 13(8):. PubMed ID: 36014198
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Calibration and error analysis of metal-oxide-semiconductor field-effect transistor dosimeters for computed tomography radiation dosimetry.
    Trattner S; Prinsen P; Wiegert J; Gerland EL; Shefer E; Morton T; Thompson CM; Yagil Y; Cheng B; Jambawalikar S; Al-Senan R; Amurao M; Halliburton SS; Einstein AJ
    Med Phys; 2017 Dec; 44(12):6589-6602. PubMed ID: 28940306
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures.
    Chen CY; Lai YK; Lee KY; Huang CF; Huang SY
    Micromachines (Basel); 2021 Jun; 12(7):. PubMed ID: 34198997
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications.
    Ma CT; Gu ZH
    Micromachines (Basel); 2021 Jan; 12(1):. PubMed ID: 33430093
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Radiation Response of Negative Gate Biased SiC MOSFETs.
    Takeyama A; Makino T; Okubo S; Tanaka Y; Yoshie T; Hijikata Y; Ohshima T
    Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31461860
    [TBL] [Abstract][Full Text] [Related]  

  • 14. An Investigation of the Effect of the Work-Function Variation of a Monolithic 3D Inverter Stacked with MOSFETs.
    Lee GJ; Yu YS
    Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144147
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress.
    Qin H; Ba Z; Xie S; Zhang Z; Chen W; Xun Q
    Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984912
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Development of compact inductive energy storage pulsed-power generator driven by 13 kV SiC-MOSFET.
    Takahashi K; Saito R; Onodera T; Takaki K; Kitai H; Sakamoto K
    Rev Sci Instrum; 2021 Jun; 92(6):064706. PubMed ID: 34243522
    [TBL] [Abstract][Full Text] [Related]  

  • 17. 150-200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers.
    Chien FT; Wang ZZ; Lin CL; Kang TK; Chen CW; Chiu HC
    Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32429285
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Investigation of 1200 V SiC MOSFETs' Surge Reliability.
    Li H; Wang J; Ren N; Xu H; Sheng K
    Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31323884
    [TBL] [Abstract][Full Text] [Related]  

  • 19. New Power MOSFET with Beyond-1D-Limit
    Zhang M; Li B; Wei J
    Materials (Basel); 2020 Jun; 13(11):. PubMed ID: 32516987
    [TBL] [Abstract][Full Text] [Related]  

  • 20. New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors.
    Shih CW; Chin A
    ACS Appl Mater Interfaces; 2016 Aug; 8(30):19187-91. PubMed ID: 27454211
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.