138 related articles for article (PubMed ID: 35782156)
1. A Simple Approach to Achieving Ultrasmall III-Nitride Microlight-Emitting Diodes with Red Emission.
Feng P; Xu C; Bai J; Zhu C; Farrer I; Martinez de Arriba G; Wang T
ACS Appl Electron Mater; 2022 Jun; 4(6):2787-2792. PubMed ID: 35782156
[TBL] [Abstract][Full Text] [Related]
2. Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width.
Bai J; Cai Y; Feng P; Fletcher P; Zhu C; Tian Y; Wang T
ACS Nano; 2020 Jun; 14(6):6906-6911. PubMed ID: 32453549
[TBL] [Abstract][Full Text] [Related]
3. A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs).
Bai J; Cai Y; Feng P; Fletcher P; Zhao X; Zhu C; Wang T
ACS Photonics; 2020 Feb; 7(2):411-415. PubMed ID: 32296730
[TBL] [Abstract][Full Text] [Related]
4. Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays.
Bui HQT; Velpula RT; Jain B; Aref OH; Nguyen HD; Lenka TR; Nguyen HPT
Micromachines (Basel); 2019 Jul; 10(8):. PubMed ID: 31344846
[TBL] [Abstract][Full Text] [Related]
5. White-Light GaN-μLEDs Employing Green/Red Perovskite Quantum Dots as Color Converters for Visible Light Communication.
Liu X; Tao L; Mei S; Cui Z; Shen D; Sheng Z; Yu J; Ye P; Zhi T; Tao T; Wang L; Guo R; Tian P
Nanomaterials (Basel); 2022 Feb; 12(4):. PubMed ID: 35214955
[TBL] [Abstract][Full Text] [Related]
6. Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy.
Liu Z; Nong M; Lu Y; Cao H; Yuvaraja S; Xiao N; Alnakhli Z; Aguileta Vázquez RR; Li X
Opt Lett; 2022 Dec; 47(23):6229-6232. PubMed ID: 37219213
[TBL] [Abstract][Full Text] [Related]
7. Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission.
Kang CM; Kang SJ; Mun SH; Choi SY; Min JH; Kim S; Shim JP; Lee DS
Sci Rep; 2017 Sep; 7(1):10333. PubMed ID: 28871141
[TBL] [Abstract][Full Text] [Related]
8. A novel wavelength-adjusting method in InGaN-based light-emitting diodes.
Deng Z; Jiang Y; Ma Z; Wang W; Jia H; Zhou J; Chen H
Sci Rep; 2013 Dec; 3():3389. PubMed ID: 24343166
[TBL] [Abstract][Full Text] [Related]
9. In-Composition Graded Quantum Barriers for Polarization Manipulation in InGaN-Based Yellow Light-Emitting Diodes.
Cui S; Tao G; Gong L; Zhao X; Zhou S
Materials (Basel); 2022 Dec; 15(23):. PubMed ID: 36500144
[TBL] [Abstract][Full Text] [Related]
10. Simple Approach to Mitigate the Emission Wavelength Instability of III-Nitride μLED Arrays.
Martinez de Arriba G; Feng P; Xu C; Zhu C; Bai J; Wang T
ACS Photonics; 2022 Jun; 9(6):2073-2078. PubMed ID: 35726243
[TBL] [Abstract][Full Text] [Related]
11. Size-dependent optoelectrical properties of 365 nm ultraviolet light-emitting diodes.
Asad M; Li Q; Sachdev M; Wong WS
Nanotechnology; 2019 Dec; 30(50):504001. PubMed ID: 31490780
[TBL] [Abstract][Full Text] [Related]
12. Highly efficient blue InGaN nanoscale light-emitting diodes.
Sheen M; Ko Y; Kim DU; Kim J; Byun JH; Choi Y; Ha J; Yeon KY; Kim D; Jung J; Choi J; Kim R; Yoo J; Kim I; Joo C; Hong N; Lee J; Jeon SH; Oh SH; Lee J; Ahn N; Lee C
Nature; 2022 Aug; 608(7921):56-61. PubMed ID: 35922503
[TBL] [Abstract][Full Text] [Related]
13. Development of high performance green c-plane III-nitride light-emitting diodes.
Alhassan AI; Young NG; Farrell RM; Pynn C; Wu F; Alyamani AY; Nakamura S; DenBaars SP; Speck JS
Opt Express; 2018 Mar; 26(5):5591-5601. PubMed ID: 29529761
[TBL] [Abstract][Full Text] [Related]
14. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
Chang HM; Lai WC; Chen WS; Chang SJ
Opt Express; 2015 Apr; 23(7):A337-45. PubMed ID: 25968799
[TBL] [Abstract][Full Text] [Related]
15. InGaN Platelets: Synthesis and Applications toward Green and Red Light-Emitting Diodes.
Bi Z; Lenrick F; Colvin J; Gustafsson A; Hultin O; Nowzari A; Lu T; Wallenberg R; Timm R; Mikkelsen A; Ohlsson BJ; Storm K; Monemar B; Samuelson L
Nano Lett; 2019 May; 19(5):2832-2839. PubMed ID: 30938533
[TBL] [Abstract][Full Text] [Related]
16. Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes.
Li P; Li H; Yao Y; Qwah KS; Iza M; Speck JS; Nakamura S; DenBaars SP
Opt Express; 2023 Feb; 31(5):7572-7578. PubMed ID: 36859886
[TBL] [Abstract][Full Text] [Related]
17. Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations.
Auf der Maur M; Pecchia A; Penazzi G; Rodrigues W; Di Carlo A
Phys Rev Lett; 2016 Jan; 116(2):027401. PubMed ID: 26824564
[TBL] [Abstract][Full Text] [Related]
18. Performance enhancement of nitrogen-polar GaN-based light-emitting diodes prepared by metalorganic chemical vapor deposition.
Wang Y; Wang Y; Zhang L; Niu Y; Yu J; Ma H; Lu C; Shi Z; Deng G; Zhang B; Zhang Y
Opt Lett; 2022 Aug; 47(15):3628-3631. PubMed ID: 35913275
[TBL] [Abstract][Full Text] [Related]
19. Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays.
Zhuang Z; Iida D; Kirilenko P; Ohkawa K
Opt Express; 2021 Sep; 29(19):29780-29788. PubMed ID: 34614716
[TBL] [Abstract][Full Text] [Related]
20. Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.
Soh CB; Liu W; Yong AM; Chua SJ; Chow SY; Tripathy S; Tan RJ
Nanoscale Res Lett; 2010 Aug; 5(11):1788-1794. PubMed ID: 21124627
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]