These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

146 related articles for article (PubMed ID: 35783488)

  • 1. Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning.
    Knobloch T; Uzlu B; Illarionov YY; Wang Z; Otto M; Filipovic L; Waltl M; Neumaier D; Lemme MC; Grasser T
    Nat Electron; 2022; 5(6):356-366. PubMed ID: 35783488
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.
    Ha TJ; Cho WJ; Chung HB; Koo SM
    J Nanosci Nanotechnol; 2015 Sep; 15(9):6695-8. PubMed ID: 26716230
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.
    Lo Nigro R; Fiorenza P; Greco G; Schilirò E; Roccaforte F
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160775
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Characterization of Single Defects in Ultrascaled MoS
    Stampfer B; Zhang F; Illarionov YY; Knobloch T; Wu P; Waltl M; Grill A; Appenzeller J; Grasser T
    ACS Nano; 2018 Jun; 12(6):5368-5375. PubMed ID: 29878746
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors.
    Kim T; Nam Y; Hur JH; Park SH; Jeon S
    Nanotechnology; 2016 Aug; 27(32):325203. PubMed ID: 27363543
    [TBL] [Abstract][Full Text] [Related]  

  • 6. The origin of excellent gate-bias stress stability in organic field-effect transistors employing fluorinated-polymer gate dielectrics.
    Kim J; Jang J; Kim K; Kim H; Kim SH; Park CE
    Adv Mater; 2014 Nov; 26(42):7241-6. PubMed ID: 25263950
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Graphene and Carbon Nanotube Heterojunction Transistors with Individual Gate Control.
    Shiomi M; Mochizuki Y; Imakita Y; Arie T; Akita S; Takei K
    ACS Nano; 2019 Apr; 13(4):4771-4777. PubMed ID: 30933474
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effects of Charge Traps on Hysteresis in Organic Field-Effect Transistors and Their Charge Trap Cause Analysis through Causal Inference Techniques.
    Kim S; Yoo H; Choi J
    Sensors (Basel); 2023 Feb; 23(4):. PubMed ID: 36850862
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in
    Park Y; Ma J; Yoo G; Heo J
    Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33669289
    [TBL] [Abstract][Full Text] [Related]  

  • 10. In-Situ Monitoring of Reciprocal Charge Transfer and Losses in Graphene-Silicon CCD Pixels.
    Ali M; Dong Y; Lv J; Guo H; Abid Anwar M; Tian F; Shahzad K; Liu W; Yu B; Bodepudi SC; Xu Y
    Sensors (Basel); 2022 Nov; 22(23):. PubMed ID: 36502042
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Role of hydrogen in volatile behaviour of defects in SiO
    Wimmer Y; El-Sayed AM; Gös W; Grasser T; Shluger AL
    Proc Math Phys Eng Sci; 2016 Jun; 472(2190):20160009. PubMed ID: 27436969
    [TBL] [Abstract][Full Text] [Related]  

  • 12. The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors.
    Oh YJ; Noh HK; Chang KJ
    Sci Technol Adv Mater; 2015 Jun; 16(3):034902. PubMed ID: 27877799
    [TBL] [Abstract][Full Text] [Related]  

  • 13. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.
    Liu J; Buchholz DB; Hennek JW; Chang RP; Facchetti A; Marks TJ
    J Am Chem Soc; 2010 Sep; 132(34):11934-42. PubMed ID: 20698566
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Functionalized Organic Thin Film Transistors for Biosensing.
    Wang N; Yang A; Fu Y; Li Y; Yan F
    Acc Chem Res; 2019 Feb; 52(2):277-287. PubMed ID: 30620566
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric.
    Tsai SJ; Wang CL; Lee HC; Lin CY; Chen JW; Shiu HW; Chang LY; Hsueh HT; Chen HY; Tsai JY; Lu YH; Chang TC; Tu LW; Teng H; Chen YC; Chen CH; Wu CL
    Sci Rep; 2016 Jun; 6():28326. PubMed ID: 27325155
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.
    Illarionov YY; Waltl M; Rzepa G; Kim JS; Kim S; Dodabalapur A; Akinwande D; Grasser T
    ACS Nano; 2016 Oct; 10(10):9543-9549. PubMed ID: 27704779
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electrically configurable graphene field-effect transistors with a graded-potential gate.
    Wang X; Jiang X; Wang T; Shi J; Liu M; Zeng Q; Cheng Z; Qiu X
    Nano Lett; 2015 May; 15(5):3212-6. PubMed ID: 25897889
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Inelastic electron tunneling spectroscopy study of thin gate dielectrics.
    Reiner JW; Cui S; Liu Z; Wang M; Ahn CH; Ma TP
    Adv Mater; 2010 Jul; 22(26-27):2962-8. PubMed ID: 20354976
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS
    Jawa H; Varghese A; Lodha S
    ACS Appl Mater Interfaces; 2021 Feb; 13(7):9186-9194. PubMed ID: 33555851
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.
    Lee GH; Cui X; Kim YD; Arefe G; Zhang X; Lee CH; Ye F; Watanabe K; Taniguchi T; Kim P; Hone J
    ACS Nano; 2015 Jul; 9(7):7019-26. PubMed ID: 26083310
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.