These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
4. Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer. Sala EM; Godsland M; Na YI; Trapalis A; Heffernan J Nanotechnology; 2021 Nov; 33(6):. PubMed ID: 34731846 [TBL] [Abstract][Full Text] [Related]
5. Highly uniform and symmetric epitaxial InAs quantum dots embedded inside Indium droplet etched nanoholes. Yu Y; Zhong H; Yang J; Liu L; Liu J; Yu S Nanotechnology; 2019 Nov; 30(48):485001. PubMed ID: 31469109 [TBL] [Abstract][Full Text] [Related]
6. Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure. Lu W; Bozkurt M; Keizer JG; Rohel T; Folliot H; Bertru N; Koenraad PM Nanotechnology; 2011 Feb; 22(5):055703. PubMed ID: 21178229 [TBL] [Abstract][Full Text] [Related]
7. Highly reduced fine-structure splitting in InAs/InP quantum dots offering an efficient on-demand entangled 1.55-microm photon emitter. He L; Gong M; Li CF; Guo GC; Zunger A Phys Rev Lett; 2008 Oct; 101(15):157405. PubMed ID: 18999641 [TBL] [Abstract][Full Text] [Related]
8. Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy. Fricker D; Atkinson P; Jin X; Lepsa M; Zeng Z; Kovács A; Kibkalo L; Dunin-Borkowski RE; Kardynał BE Nanotechnology; 2023 Jan; 34(14):. PubMed ID: 36595322 [TBL] [Abstract][Full Text] [Related]
9. Broadband tunable InAs/InP quantum dot external-cavity laser emitting around 1.55 μm. Gao F; Luo S; Ji HM; Yang XG; Liang P; Yang T Opt Express; 2015 Jul; 23(14):18493-500. PubMed ID: 26191907 [TBL] [Abstract][Full Text] [Related]
10. Energy transfer within ultralow density twin InAs quantum dots grown by droplet epitaxy. Liang BL; Wang ZM; Wang XY; Lee JH; Mazur YI; Shih CK; Salamo GJ ACS Nano; 2008 Nov; 2(11):2219-24. PubMed ID: 19206386 [TBL] [Abstract][Full Text] [Related]
11. Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography. Holewa P; Jasiński J; Shikin A; Lebedkina E; Maryński A; Syperek M; Semenova E Materials (Basel); 2021 Jan; 14(2):. PubMed ID: 33466881 [TBL] [Abstract][Full Text] [Related]
12. First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth. Yin Z; Tang X; Zhang J; Deny S; Teng J; Du A; Chin MK Nanotechnology; 2008 Feb; 19(8):085603. PubMed ID: 21730727 [TBL] [Abstract][Full Text] [Related]
13. Near-infrared nano-imaging spectroscopy using a phase change mask method. Sato Y; Kanazawa S; Saiki T Microscopy (Oxf); 2014 Nov; 63 Suppl 1():i10. PubMed ID: 25359798 [TBL] [Abstract][Full Text] [Related]
15. Morphology and optical properties of single- and multi-layer InAs quantum dots. Hsu CC; Hsu RQ; Wu YH J Electron Microsc (Tokyo); 2010 Aug; 59 Suppl 1():S149-54. PubMed ID: 20576720 [TBL] [Abstract][Full Text] [Related]
16. Formation of mid-infrared emissive InAs quantum dots on a graded InxGa1-xAs/InP matrix with a more uniform size and higher density under safer growth conditions. Yin Z; Tang X; Sentosa D; Zhao J Nanotechnology; 2006 Mar; 17(6):1646-50. PubMed ID: 26558572 [TBL] [Abstract][Full Text] [Related]
17. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate. Shuhui Z; Lu W; Zhenwu S; Yanxiang C; Haitao T; Huaiju G; Haiqiang J; Wenxin W; Hong C; Liancheng Z Nanoscale Res Lett; 2012 Jan; 7(1):87. PubMed ID: 22277096 [TBL] [Abstract][Full Text] [Related]
18. O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate. Abouzaid O; Mehdi H; Martin M; Moeyaert J; Salem B; David S; Souifi A; Chauvin N; Hartmann JM; Ilahi B; Morris D; Ahaitouf A; Ahaitouf A; Baron T Nanomaterials (Basel); 2020 Dec; 10(12):. PubMed ID: 33297597 [TBL] [Abstract][Full Text] [Related]
19. High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy. Basso Basset F; Bietti S; Reindl M; Esposito L; Fedorov A; Huber D; Rastelli A; Bonera E; Trotta R; Sanguinetti S Nano Lett; 2018 Jan; 18(1):505-512. PubMed ID: 29239186 [TBL] [Abstract][Full Text] [Related]
20. Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy. Rödel R; Bauer A; Kremling S; Reitzenstein S; Höfling S; Kamp M; Worschech L; Forchel A Nanotechnology; 2012 Jan; 23(1):015605. PubMed ID: 22156168 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]