193 related articles for article (PubMed ID: 35808021)
1. Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System.
Oh I; Pyo J; Kim S
Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35808021
[TBL] [Abstract][Full Text] [Related]
2. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO
Cho Y; Kim J; Kang M; Kim S
Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837316
[TBL] [Abstract][Full Text] [Related]
3. Status and Prospects of ZnO-Based Resistive Switching Memory Devices.
Simanjuntak FM; Panda D; Wei KH; Tseng TY
Nanoscale Res Lett; 2016 Dec; 11(1):368. PubMed ID: 27541816
[TBL] [Abstract][Full Text] [Related]
4. Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device.
Khan SA; Lee GH; Mahata C; Ismail M; Kim H; Kim S
Nanomaterials (Basel); 2021 Jan; 11(2):. PubMed ID: 33513672
[TBL] [Abstract][Full Text] [Related]
5. Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.
Huang Y; Yu J; Kong Y; Wang X
RSC Adv; 2022 Nov; 12(52):33634-33640. PubMed ID: 36505707
[TBL] [Abstract][Full Text] [Related]
6. Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process.
Kim M; Ju D; Kang M; Kim S
Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947704
[TBL] [Abstract][Full Text] [Related]
7. Bipolar Switching Characteristics of Transparent WO
Kim J; Park J; Kim S
Materials (Basel); 2022 Oct; 15(20):. PubMed ID: 36295253
[TBL] [Abstract][Full Text] [Related]
8. Stable Resistive Switching in ZnO/PVA:MoS
Sun T; Shi H; Gao S; Zhou Z; Yu Z; Guo W; Li H; Zhang F; Xu Z; Zhang X
Nanomaterials (Basel); 2022 Jun; 12(12):. PubMed ID: 35745316
[TBL] [Abstract][Full Text] [Related]
9. Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO
Mahata C; Kang M; Kim S
Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33092042
[TBL] [Abstract][Full Text] [Related]
10. The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO
Noh M; Ju D; Cho S; Kim S
Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947701
[TBL] [Abstract][Full Text] [Related]
11. Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al
Mahata C; Park J; Ismail M; Kim DH; Kim S
Materials (Basel); 2022 Sep; 15(19):. PubMed ID: 36234005
[TBL] [Abstract][Full Text] [Related]
12. Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.
Mahata C; Ismail M; Kang M; Kim S
Nanoscale Res Lett; 2022 Jun; 17(1):58. PubMed ID: 35687194
[TBL] [Abstract][Full Text] [Related]
13. Interface engineering in ZnO/CdO hybrid nanocomposites to enhanced resistive switching memory for neuromorphic computing.
Ghafoor F; Kim H; Ghafoor B; Rehman S; Asghar Khan M; Aziz J; Rabeel M; Faheem Maqsood M; Dastgeer G; Lee MJ; Farooq Khan M; Kim DK
J Colloid Interface Sci; 2024 Apr; 659():1-10. PubMed ID: 38157721
[TBL] [Abstract][Full Text] [Related]
14. Multi-Level Resistive Al/Ga
Wang LW; Huang CW; Lee KJ; Chu SY; Wang YH
Nanomaterials (Basel); 2023 Jun; 13(12):. PubMed ID: 37368281
[TBL] [Abstract][Full Text] [Related]
15. Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system.
Park J; Ryu H; Kim S
Sci Rep; 2021 Aug; 11(1):16601. PubMed ID: 34400734
[TBL] [Abstract][Full Text] [Related]
16. Multi-level Cells and Quantized Conductance Characteristics of Al
Lee Y; Park J; Chung D; Lee K; Kim S
Nanoscale Res Lett; 2022 Sep; 17(1):84. PubMed ID: 36057011
[TBL] [Abstract][Full Text] [Related]
17. Low-Power Resistive Switching Characteristic in HfO
Ding X; Feng Y; Huang P; Liu L; Kang J
Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
[TBL] [Abstract][Full Text] [Related]
18. The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories.
Rahaman SZ; Lin YD; Lee HY; Chen YS; Chen PS; Chen WS; Hsu CH; Tsai KH; Tsai MJ; Wang PH
Langmuir; 2017 May; 33(19):4654-4665. PubMed ID: 28420238
[TBL] [Abstract][Full Text] [Related]
19. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
Zhao X; Song P; Gai H; Li Y; Ai C; Wen D
Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957
[TBL] [Abstract][Full Text] [Related]
20. Improved resistive switching characteristics of a multi-stacked HfO
Khera EA; Mahata C; Imran M; Niaz NA; Hussain F; Khalil RMA; Rasheed U; SungjunKim
RSC Adv; 2022 Apr; 12(19):11649-11656. PubMed ID: 35432948
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
