158 related articles for article (PubMed ID: 35820398)
21. Physical and chemical mechanisms in oxide-based resistance random access memory.
Chang KC; Chang TC; Tsai TM; Zhang R; Hung YC; Syu YE; Chang YF; Chen MC; Chu TJ; Chen HL; Pan CH; Shih CC; Zheng JC; Sze SM
Nanoscale Res Lett; 2015; 10():120. PubMed ID: 25873842
[TBL] [Abstract][Full Text] [Related]
22. Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system.
Park J; Ryu H; Kim S
Sci Rep; 2021 Aug; 11(1):16601. PubMed ID: 34400734
[TBL] [Abstract][Full Text] [Related]
23. Graphene-based RRAM devices for neural computing.
R RT; Das RR; Reghuvaran C; James A
Front Neurosci; 2023; 17():1253075. PubMed ID: 37886675
[TBL] [Abstract][Full Text] [Related]
24. Facile Achievement of Complementary Resistive Switching in Block Copolymer Micelle-Based Resistive Memories.
Choi HH; Kim HJ; Oh J; Kim M; Kim Y; Jho JY; Lee KH; Son JG; Park JH
Macromol Rapid Commun; 2022 Apr; 43(7):e2100686. PubMed ID: 35084074
[TBL] [Abstract][Full Text] [Related]
25. Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device.
Choi JY; Yu HC; Lee J; Jeon J; Im J; Jang J; Jin SW; Kim KK; Cho S; Chung CM
Polymers (Basel); 2018 Aug; 10(8):. PubMed ID: 30960826
[TBL] [Abstract][Full Text] [Related]
26. Short-Term Memory Dynamics of TiN/Ti/TiO
Cho H; Kim S
Nanomaterials (Basel); 2020 Sep; 10(9):. PubMed ID: 32932656
[TBL] [Abstract][Full Text] [Related]
27. Reset-First and Multibit-Level Resistive-Switching Behavior of Lanthanum Nickel Oxide (LaNiO
Kim D; Lee J; Kim J; Sohn H
Materials (Basel); 2023 Jul; 16(14):. PubMed ID: 37512267
[TBL] [Abstract][Full Text] [Related]
28. Unsupervised Learning on Resistive Memory Array Based Spiking Neural Networks.
Guo Y; Wu H; Gao B; Qian H
Front Neurosci; 2019; 13():812. PubMed ID: 31447634
[TBL] [Abstract][Full Text] [Related]
29. Low-Power Resistive Switching Characteristic in HfO
Ding X; Feng Y; Huang P; Liu L; Kang J
Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
[TBL] [Abstract][Full Text] [Related]
30. Conductance Quantization in Resistive Random Access Memory.
Li Y; Long S; Liu Y; Hu C; Teng J; Liu Q; Lv H; Suñé J; Liu M
Nanoscale Res Lett; 2015 Dec; 10(1):420. PubMed ID: 26501832
[TBL] [Abstract][Full Text] [Related]
31. High performance of graphene oxide-doped silicon oxide-based resistance random access memory.
Zhang R; Chang KC; Chang TC; Tsai TM; Chen KH; Lou JC; Chen JH; Young TF; Shih CC; Yang YL; Pan YC; Chu TJ; Huang SY; Pan CH; Su YT; Syu YE; Sze SM
Nanoscale Res Lett; 2013 Nov; 8(1):497. PubMed ID: 24261454
[TBL] [Abstract][Full Text] [Related]
32. Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing.
Ali S; Ullah MA; Raza A; Iqbal MW; Khan MF; Rasheed M; Ismail M; Kim S
Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686950
[TBL] [Abstract][Full Text] [Related]
33. A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films.
Yoon JG
Materials (Basel); 2020 Aug; 13(17):. PubMed ID: 32825397
[TBL] [Abstract][Full Text] [Related]
34. Graphene oxide thin films for flexible nonvolatile memory applications.
Jeong HY; Kim JY; Kim JW; Hwang JO; Kim JE; Lee JY; Yoon TH; Cho BJ; Kim SO; Ruoff RS; Choi SY
Nano Lett; 2010 Nov; 10(11):4381-6. PubMed ID: 20919689
[TBL] [Abstract][Full Text] [Related]
35. Exploiting defective RRAM array as synapses of HTM spatial pooler with boost-factor adjustment scheme for defect-tolerant neuromorphic systems.
Woo J; Van Nguyen T; Kim JH; Im JP; Im S; Kim Y; Min KS; Moon SE
Sci Rep; 2020 Jul; 10(1):11703. PubMed ID: 32678139
[TBL] [Abstract][Full Text] [Related]
36. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.
Chen KH; Kao MC; Huang SJ; Li JZ
Materials (Basel); 2017 Dec; 10(12):. PubMed ID: 29231867
[TBL] [Abstract][Full Text] [Related]
37. Tunable Synaptic Characteristics of a Ti/TiO
Yang J; Cho H; Ryu H; Ismail M; Mahata C; Kim S
ACS Appl Mater Interfaces; 2021 Jul; 13(28):33244-33252. PubMed ID: 34251796
[TBL] [Abstract][Full Text] [Related]
38. Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN
Chen T; Leng K; Ma Z; Jiang X; Chen K; Li W; Xu J; Xu L
Nanomaterials (Basel); 2022 Dec; 13(1):. PubMed ID: 36615995
[TBL] [Abstract][Full Text] [Related]
39. Resistive switching in sub-micrometric ZnO polycrystalline films.
Conti D; Laurenti M; Porro S; Giovinazzo C; Bianco S; Fra V; Chiolerio A; Pirri CF; Milano G; Ricciardi C
Nanotechnology; 2019 Feb; 30(6):065707. PubMed ID: 30523900
[TBL] [Abstract][Full Text] [Related]
40. Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.
Pradhan SK; Xiao B; Mishra S; Killam A; Pradhan AK
Sci Rep; 2016 May; 6():26763. PubMed ID: 27240537
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
