These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

181 related articles for article (PubMed ID: 35872937)

  • 1. IGBT Fault Prediction Combining Terminal Characteristics and Artificial Intelligence Neural Network.
    Li C
    Comput Math Methods Med; 2022; 2022():7459354. PubMed ID: 35872937
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Performance Degradation Modeling and Its Prediction Algorithm of an IGBT Gate Oxide Layer Based on a CNN-LSTM Network.
    Wang X; Zhou Z; He S; Liu J; Cui W
    Micromachines (Basel); 2023 Apr; 14(5):. PubMed ID: 37241583
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data.
    Liu Z; Mei W; Zeng X; Yang C; Zhou X
    Sensors (Basel); 2017 Nov; 17(11):. PubMed ID: 29099811
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Potential Fault Diagnosis Method and Classification Accuracy Detection of IGBT Device Based on Improved Single Hidden Layer Feedforward Neural Network.
    Wu J; Chen X; Zhang Z
    Comput Intell Neurosci; 2021; 2021():6036118. PubMed ID: 34630549
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Online Recognition of Fallen-Off Bond Wires in IGBT Modules.
    Hu Z; Cui M; Shi T
    Micromachines (Basel); 2024 Mar; 15(3):. PubMed ID: 38542651
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network.
    Yao Q; Guo Y; Zhang B; Chen J; Zhang J; Zhang M; Guo X; Yao J; Tang W; Liu J
    Micromachines (Basel); 2021 Dec; 13(1):. PubMed ID: 35056169
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications.
    Abdalgader IAS; Kivrak S; Özer T
    Micromachines (Basel); 2022 Feb; 13(2):. PubMed ID: 35208437
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Wavelet LSTM for Fault Forecasting in Electrical Power Grids.
    Branco NW; Cavalca MSM; Stefenon SF; Leithardt VRQ
    Sensors (Basel); 2022 Oct; 22(21):. PubMed ID: 36366021
    [TBL] [Abstract][Full Text] [Related]  

  • 9. The Optimal Design of Field Ring for Reliability and Realization of 3.3 kV Insulated-Gate Bipolar Transistor Power Semiconductor.
    Shin MC; Kim HA; Ahn BS; Cui HF; Kim SY; Kang EG
    J Nanosci Nanotechnol; 2019 Mar; 19(3):1720-1723. PubMed ID: 30469253
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Study of the Solder Characteristics of IGBT Modules Based on Thermal-Mechanical Coupling Simulation.
    Chen J; Liu B; Hu M; Huang S; Yu S; Wu Y; Yang J
    Materials (Basel); 2023 May; 16(9):. PubMed ID: 37176386
    [TBL] [Abstract][Full Text] [Related]  

  • 11. A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study.
    Yuan S; Yan Z; Li Y; Wang Y; Liu Q; Zhan X; Jiang X; He Y; Gong X
    Micromachines (Basel); 2024 Jun; 15(6):. PubMed ID: 38930729
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A COVID-19 Pandemic Artificial Intelligence-Based System With Deep Learning Forecasting and Automatic Statistical Data Acquisition: Development and Implementation Study.
    Yu CS; Chang SS; Chang TH; Wu JL; Lin YJ; Chien HF; Chen RJ
    J Med Internet Res; 2021 May; 23(5):e27806. PubMed ID: 33900932
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter.
    Wu W; Li Y; Yu M; Gao C; Shu Y; Chen Y
    Micromachines (Basel); 2023 Apr; 14(4):. PubMed ID: 37421106
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Intelligent Fault Diagnosis Framework for Modular Multilevel Converters in HVDC Transmission.
    Ahmed HOA; Yu Y; Wang Q; Darwish M; Nandi AK
    Sensors (Basel); 2022 Jan; 22(1):. PubMed ID: 35009901
    [TBL] [Abstract][Full Text] [Related]  

  • 15. IGBT Gate Boost Drive Technology for Promoting the Overload Capacity of Traction Converter.
    Zhang Y; Dong X; Wu L; Wang X; Ma M; Huang X; Jin Y; Zhu P
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930708
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT.
    Yuan S; Li Y; Hou M; Jiang X; Gong X; Hao Y
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258192
    [TBL] [Abstract][Full Text] [Related]  

  • 17. A novel bearing intelligent fault diagnosis framework under time-varying working conditions using recurrent neural network.
    An Z; Li S; Wang J; Jiang X
    ISA Trans; 2020 May; 100():155-170. PubMed ID: 31732140
    [TBL] [Abstract][Full Text] [Related]  

  • 18. A Novel Concept of Electron-Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer.
    Wang Z; Yang C; Huang X
    Micromachines (Basel); 2023 Mar; 14(3):. PubMed ID: 36985053
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Machine Learning Algorithm for Efficient Design of Separated Buffer Super-Junction IGBT.
    Kim KY; Hwang TH; Song YS; Kim H; Kim JH
    Micromachines (Basel); 2023 Jan; 14(2):. PubMed ID: 36838033
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Using Machine Learning and Finite Element Analysis to Extract Traction-Separation Relations at Bonding Wire Interfaces of Insulated Gate Bipolar Transistor Modules.
    Zhao S; An T; Wang Q; Qin F
    Materials (Basel); 2024 Feb; 17(5):. PubMed ID: 38473474
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.