These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
223 related articles for article (PubMed ID: 35873858)
1. Emergent solution based IGZO memristor towards neuromorphic applications. Martins RA; Carlos E; Deuermeier J; Pereira ME; Martins R; Fortunato E; Kiazadeh A J Mater Chem C Mater; 2022 Feb; 10(6):1991-1998. PubMed ID: 35873858 [TBL] [Abstract][Full Text] [Related]
2. Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics. Choi HW; Song KW; Kim SH; Nguyen KT; Eadi SB; Kwon HM; Lee HD Sci Rep; 2022 Jan; 12(1):1259. PubMed ID: 35075173 [TBL] [Abstract][Full Text] [Related]
3. 1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature. Li JC; Ma YX; Wu SH; Liu ZC; Ding PF; Dai D; Ding YT; Zhang YY; Huang Y; Lai PT; Wang YL ACS Appl Mater Interfaces; 2024 Apr; 16(14):17766-17777. PubMed ID: 38534058 [TBL] [Abstract][Full Text] [Related]
4. Thousands of conductance levels in memristors integrated on CMOS. Rao M; Tang H; Wu J; Song W; Zhang M; Yin W; Zhuo Y; Kiani F; Chen B; Jiang X; Liu H; Chen HY; Midya R; Ye F; Jiang H; Wang Z; Wu M; Hu M; Wang H; Xia Q; Ge N; Li J; Yang JJ Nature; 2023 Mar; 615(7954):823-829. PubMed ID: 36991190 [TBL] [Abstract][Full Text] [Related]
5. Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO Kim D; Lee HJ; Yang TJ; Choi WS; Kim C; Choi SJ; Bae JH; Kim DM; Kim S; Kim DH Nanomaterials (Basel); 2022 Oct; 12(20):. PubMed ID: 36296772 [TBL] [Abstract][Full Text] [Related]
6. Milk-Ta Min JG; Park H; Cho WJ Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080015 [TBL] [Abstract][Full Text] [Related]
7. High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation. Min SY; Cho WJ Nanomaterials (Basel); 2021 Apr; 11(5):. PubMed ID: 33922130 [TBL] [Abstract][Full Text] [Related]
8. Controllable digital and analog resistive switching behavior of 2D layered WSe Cheng S; Zhong L; Yin J; Duan H; Xie Q; Luo W; Jie W Nanoscale; 2023 Mar; 15(10):4801-4808. PubMed ID: 36779310 [TBL] [Abstract][Full Text] [Related]
11. Inkjet printed IGZO memristors with volatile and non-volatile switching. Franco M; Kiazadeh A; Deuermeier J; Lanceros-Méndez S; Martins R; Carlos E Sci Rep; 2024 Mar; 14(1):7469. PubMed ID: 38553556 [TBL] [Abstract][Full Text] [Related]
12. Opportunity of the Lead-Free All-Inorganic Cs Zeng F; Guo Y; Hu W; Tan Y; Zhang X; Feng J; Tang X ACS Appl Mater Interfaces; 2020 May; 12(20):23094-23101. PubMed ID: 32336082 [TBL] [Abstract][Full Text] [Related]
13. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO Cho Y; Kim J; Kang M; Kim S Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837316 [TBL] [Abstract][Full Text] [Related]
14. Sputtering-deposited amorphous SrVO Lee TJ; Kim SK; Seong TY Sci Rep; 2020 Apr; 10(1):5761. PubMed ID: 32238846 [TBL] [Abstract][Full Text] [Related]
15. Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing. Wang R; Shi T; Zhang X; Wang W; Wei J; Lu J; Zhao X; Wu Z; Cao R; Long S; Liu Q; Liu M Materials (Basel); 2018 Oct; 11(11):. PubMed ID: 30373122 [TBL] [Abstract][Full Text] [Related]
16. Improved analog switching characteristics of Ta Lee TS; Choi C Nanotechnology; 2022 Mar; 33(24):. PubMed ID: 35226891 [TBL] [Abstract][Full Text] [Related]
17. Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing. Ali S; Ullah MA; Raza A; Iqbal MW; Khan MF; Rasheed M; Ismail M; Kim S Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686950 [TBL] [Abstract][Full Text] [Related]
18. Memristors with Tunable Volatility for Reconfigurable Neuromorphic Computing. Woo KS; Park H; Ghenzi N; Talin AA; Jeong T; Choi JH; Oh S; Jang YH; Han J; Williams RS; Kumar S; Hwang CS ACS Nano; 2024 Jul; 18(26):17007-17017. PubMed ID: 38952324 [TBL] [Abstract][Full Text] [Related]
19. Polymeric Memristor Based Artificial Synapses with Ultra-Wide Operating Temperature. Li J; Qian Y; Li W; Yu S; Ke Y; Qian H; Lin YH; Hou CH; Shyue JJ; Zhou J; Chen Y; Xu J; Zhu J; Yi M; Huang W Adv Mater; 2023 Jun; 35(23):e2209728. PubMed ID: 36972150 [TBL] [Abstract][Full Text] [Related]
20. Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Prezioso M; Merrikh-Bayat F; Hoskins BD; Adam GC; Likharev KK; Strukov DB Nature; 2015 May; 521(7550):61-4. PubMed ID: 25951284 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]