202 related articles for article (PubMed ID: 35879024)
1. Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm
Rabbi MH; Lee S; Sasaki D; Kawashima E; Tsuruma Y; Jang J
Small Methods; 2022 Sep; 6(9):e2200668. PubMed ID: 35879024
[TBL] [Abstract][Full Text] [Related]
2. Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors.
Kim GB; Kim T; Bang SW; Hur JS; Choi CH; Kim MJ; Jeong JK
ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38662878
[TBL] [Abstract][Full Text] [Related]
3. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
Cho MH; Choi CH; Jeong JK
ACS Appl Mater Interfaces; 2022 Apr; 14(16):18646-18661. PubMed ID: 35426670
[TBL] [Abstract][Full Text] [Related]
4. As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability.
Bae J; Ali A; Islam MM; Jeong M; Park C; Jang J
ACS Appl Mater Interfaces; 2023 Aug; 15(33):39494-39504. PubMed ID: 37561400
[TBL] [Abstract][Full Text] [Related]
5. Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO
Choi CH; Kim T; Kim MJ; Kim GB; Oh JE; Jeong JK
Sci Rep; 2024 Apr; 14(1):7623. PubMed ID: 38561385
[TBL] [Abstract][Full Text] [Related]
6. Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-Si transistor performance.
Park JC; Lee HN; Im S
ACS Appl Mater Interfaces; 2013 Aug; 5(15):6990-5. PubMed ID: 23823486
[TBL] [Abstract][Full Text] [Related]
7. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
[TBL] [Abstract][Full Text] [Related]
8. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
Yu X; Zhou N; Smith J; Lin H; Stallings K; Yu J; Marks TJ; Facchetti A
ACS Appl Mater Interfaces; 2013 Aug; 5(16):7983-8. PubMed ID: 23876148
[TBL] [Abstract][Full Text] [Related]
9. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
Choi S; Song S; Kim T; Shin JC; Jo JW; Park SK; Kim YH
Micromachines (Basel); 2020 Nov; 11(12):. PubMed ID: 33255690
[TBL] [Abstract][Full Text] [Related]
10. Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors.
Ko JB; Cho SI; Park SK
ACS Appl Mater Interfaces; 2023 Oct; 15(40):47799-47809. PubMed ID: 37769061
[TBL] [Abstract][Full Text] [Related]
11. High-mobility solution-processed tin oxide thin-film transistors with high-κ alumina dielectric working in enhancement mode.
Huang G; Duan L; Dong G; Zhang D; Qiu Y
ACS Appl Mater Interfaces; 2014 Dec; 6(23):20786-94. PubMed ID: 25375760
[TBL] [Abstract][Full Text] [Related]
12. Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors.
Hur JS; Kim JO; Kim HA; Jeong JK
ACS Appl Mater Interfaces; 2019 Jun; 11(24):21675-21685. PubMed ID: 31124358
[TBL] [Abstract][Full Text] [Related]
13. High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach.
Yang HJ; Seul HJ; Kim MJ; Kim Y; Cho HC; Cho MH; Song YH; Yang H; Jeong JK
ACS Appl Mater Interfaces; 2020 Nov; 12(47):52937-52951. PubMed ID: 33172258
[TBL] [Abstract][Full Text] [Related]
14. Amorphous IGZO TFT with High Mobility of ∼70 cm
Sheng J; Hong T; Lee HM; Kim K; Sasase M; Kim J; Hosono H; Park JS
ACS Appl Mater Interfaces; 2019 Oct; 11(43):40300-40309. PubMed ID: 31584254
[TBL] [Abstract][Full Text] [Related]
15. High-mobility InSnZnO Thin Film Transistors via Introducing Water Vapor Sputtering Gas.
Li T; Liu X; Ren J; Hu P; Qian Y; Jin T; Sun J; Chen Z; Liang L; Cao H
ACS Appl Mater Interfaces; 2024 Jun; 16(24):31237-31246. PubMed ID: 38842364
[TBL] [Abstract][Full Text] [Related]
16. High-mobility hydrogenated polycrystalline In
Magari Y; Kataoka T; Yeh W; Furuta M
Nat Commun; 2022 Feb; 13(1):1078. PubMed ID: 35228522
[TBL] [Abstract][Full Text] [Related]
17. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
[TBL] [Abstract][Full Text] [Related]
18. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics.
Tiwari N; Rajput M; John RA; Kulkarni MR; Nguyen AC; Mathews N
ACS Appl Mater Interfaces; 2018 Sep; 10(36):30506-30513. PubMed ID: 30129368
[TBL] [Abstract][Full Text] [Related]
19. Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor.
Chang Y; Bukke RN; Bae J; Jang J
Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686917
[TBL] [Abstract][Full Text] [Related]
20. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK
ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]