These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

160 related articles for article (PubMed ID: 35889681)

  • 1. 3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage.
    Yu X; Ma Z; Shen Z; Li W; Chen K; Xu J; Xu L
    Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889681
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer.
    Hu H; Ma Z; Yu X; Chen T; Zhou C; Li W; Chen K; Xu J; Xu L
    Nanomaterials (Basel); 2023 Mar; 13(6):. PubMed ID: 36985856
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Review of Semiconductor Flash Memory Devices for Material and Process Issues.
    Kim SS; Yong SK; Kim W; Kang S; Park HW; Yoon KJ; Sheen DS; Lee S; Hwang CS
    Adv Mater; 2023 Oct; 35(43):e2200659. PubMed ID: 35305277
    [TBL] [Abstract][Full Text] [Related]  

  • 4. The periodicity effect on the charge storage characteristic of multistacked nc-Si floating gate.
    Ma Z; Liu G; Jiang X; Xia G; Yan M; Li W; Chen K; Xu L; Xu J; Feng D
    J Nanosci Nanotechnol; 2013 Feb; 13(2):997-1000. PubMed ID: 23646558
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Enhancement of the Electrical Characteristics for 3D NAND Flash Memory Devices Due to a Modified Cell Structure in the Gate Region.
    Lee YG; Jung HS; Kim TW
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6148-6151. PubMed ID: 31026926
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Review of neuromorphic computing based on NAND flash memory.
    Lee ST; Lee JH
    Nanoscale Horiz; 2024 Aug; 9(9):1475-1492. PubMed ID: 39015048
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash.
    Oh J; Na H; Park S; Sohn H
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6413-5. PubMed ID: 24205672
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Channel Modeling and Quantization Design for 3D NAND Flash Memory.
    Wang C; Mei Z; Li J; Shu F; He X; Kong L
    Entropy (Basel); 2023 Jun; 25(7):. PubMed ID: 37509912
    [TBL] [Abstract][Full Text] [Related]  

  • 9. MBE-grown Si and Si(1-x)Ge(x) quantum dots embedded within epitaxial Gd2O3 on Si(111) substrate for floating gate memory device.
    Manna S; Aluguri R; Katiyar A; Das S; Laha A; Osten HJ; Ray SK
    Nanotechnology; 2013 Dec; 24(50):505709. PubMed ID: 24284782
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory.
    Jung WJ; Park JY
    Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832709
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory.
    Jeong JK; Sung JY; Ko WS; Nam KR; Lee HD; Lee GW
    Micromachines (Basel); 2021 Nov; 12(11):. PubMed ID: 34832812
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.
    Kim SY; Park JK; Hwang WS; Lee SJ; Lee KH; Pyi SH; Cho BJ
    J Nanosci Nanotechnol; 2016 May; 16(5):5044-8. PubMed ID: 27483868
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors.
    Fan H; Tian X; Peng H; Shen Y; Li L; Li M; Gao L
    Sensors (Basel); 2023 Mar; 23(6):. PubMed ID: 36991921
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Future prospects of NAND flash memory technology--the evolution from floating gate to charge trapping to 3D stacking.
    Lu CY
    J Nanosci Nanotechnol; 2012 Oct; 12(10):7604-18. PubMed ID: 23421122
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Multilevel MoS
    Kim SH; Yi SG; Park MU; Lee C; Kim M; Yoo KH
    ACS Appl Mater Interfaces; 2019 Jul; 11(28):25306-25312. PubMed ID: 31268292
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells.
    Lee ST; Lim S; Choi N; Bae JH; Kwon D; Kim HS; Park BG; Lee JH
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4138-4142. PubMed ID: 31968431
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Neuromorphic Computing Using NAND Flash Memory Architecture With Pulse Width Modulation Scheme.
    Lee ST; Lee JH
    Front Neurosci; 2020; 14():571292. PubMed ID: 33071744
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory.
    He R; Hu H; Xiong C; Han G
    Micromachines (Basel); 2021 Jul; 12(8):. PubMed ID: 34442501
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Recent patents in semiconductor nanocluster floating gate flash memory.
    Dai JY; Lee PF
    Recent Pat Nanotechnol; 2007; 1(2):91-7. PubMed ID: 19076023
    [TBL] [Abstract][Full Text] [Related]  

  • 20. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO
    Park JH; Shin MH; Yi JS
    Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31121917
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.