172 related articles for article (PubMed ID: 35951269)
1. High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates.
Deng S; Wei J; Zhang C; Liao D; Sun T; Yang K; Xi L; Zhang B; Luo X
Nanoscale Res Lett; 2022 Aug; 17(1):73. PubMed ID: 35951269
[TBL] [Abstract][Full Text] [Related]
2. Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications.
Liu AC; Tu PT; Chen HC; Lai YY; Yeh PC; Kuo HC
Micromachines (Basel); 2023 Aug; 14(8):. PubMed ID: 37630118
[TBL] [Abstract][Full Text] [Related]
3. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
[TBL] [Abstract][Full Text] [Related]
4. Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic.
Wu TL; Tang SW; Jiang HJ
Micromachines (Basel); 2020 Feb; 11(2):. PubMed ID: 32028702
[TBL] [Abstract][Full Text] [Related]
5. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
[TBL] [Abstract][Full Text] [Related]
6. A Novel AlGaN/Si
Guo J; Hu S; Li P; Jiang J; Wang R; Wang Y; Wu H
Micromachines (Basel); 2022 Mar; 13(3):. PubMed ID: 35334756
[TBL] [Abstract][Full Text] [Related]
7. Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage.
Xia X; Guo Z; Sun H
Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832730
[TBL] [Abstract][Full Text] [Related]
8. Remarkable Reduction in I
Mazumder S; Pal P; Lee KW; Wang YH
Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556876
[TBL] [Abstract][Full Text] [Related]
9. A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance.
Liu J; Guo Y; Zhang J; Yao J; Li M; Zhang M; Chen J; Huang X; Huang C
Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683299
[TBL] [Abstract][Full Text] [Related]
10. Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.
Kang WS; Choi JH; Kim D; Kim JH; Lee JH; Min BG; Kang DM; Choi JH; Kim HS
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258177
[TBL] [Abstract][Full Text] [Related]
11. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
[TBL] [Abstract][Full Text] [Related]
12. Performance Enhancement in N
Yang SK; Mazumder S; Wu ZG; Wang YH
Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33801062
[TBL] [Abstract][Full Text] [Related]
13. Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range.
Wang S; Zhou Q; Chen K; Bai P; Wang J; Zhu L; Zhou C; Gao W; Zhang B
Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057371
[TBL] [Abstract][Full Text] [Related]
14. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.
Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y
Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635
[TBL] [Abstract][Full Text] [Related]
15. Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
Vuong TA; Cha HY; Kim H
Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34068454
[TBL] [Abstract][Full Text] [Related]
16. Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT.
Jiang J; Chen Q; Hu S; Shi Y; He Z; Huang Y; Hui C; Chen Y; Wu H; Lu G
Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837114
[TBL] [Abstract][Full Text] [Related]
17. Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation.
Sheu G; Song YL; Mogarala R; Susmitha D; Issac K
Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208294
[TBL] [Abstract][Full Text] [Related]
18. Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO₂/SiN.
Jung JH; Cho MS; Jang WD; Lee SH; Jang J; Bae JH; Kang IM
J Nanosci Nanotechnol; 2020 Aug; 20(8):4678-4683. PubMed ID: 32126640
[TBL] [Abstract][Full Text] [Related]
19. Optimization AlGaN/GaN HEMT with Field Plate Structures.
Shi N; Wang K; Zhou B; Weng J; Cheng Z
Micromachines (Basel); 2022 Apr; 13(5):. PubMed ID: 35630169
[TBL] [Abstract][Full Text] [Related]
20. Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer.
Hong KB; Peng CY; Lin WC; Chen KL; Chen SC; Kuo HC; Chang EY; Lin CH
Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984926
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
