These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
138 related articles for article (PubMed ID: 35951414)
1. Large-Scale Ultrafast Strain Engineering of CVD-Grown Two-Dimensional Materials on Strain Self-Limited Deformable Nanostructures toward Enhanced Field-Effect Transistors. Huang Z; Lu N; Wang Z; Xu S; Guan J; Hu Y Nano Lett; 2022 Sep; 22(18):7734-7741. PubMed ID: 35951414 [TBL] [Abstract][Full Text] [Related]
2. Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS Shin H; Katiyar AK; Hoang AT; Yun SM; Kim BJ; Lee G; Kim Y; Lee J; Kim H; Ahn JH ACS Nano; 2024 Feb; 18(5):4414-4423. PubMed ID: 38277430 [TBL] [Abstract][Full Text] [Related]
3. Approaching Ohmic Contacts for Ideal Monolayer MoS Xiao J; Chen K; Zhang X; Liu X; Yu H; Gao L; Hong M; Gu L; Zhang Z; Zhang Y Small Methods; 2023 Nov; 7(11):e2300611. PubMed ID: 37551044 [TBL] [Abstract][Full Text] [Related]
4. Growth of large-scale and thickness-modulated MoSâ‚‚ nanosheets. Choudhary N; Park J; Hwang JY; Choi W ACS Appl Mater Interfaces; 2014 Dec; 6(23):21215-22. PubMed ID: 25382854 [TBL] [Abstract][Full Text] [Related]
5. Synergistic Photon Management and Strain-Induced Band Gap Engineering of Two-Dimensional MoS Gao X; Fu S; Fang T; Yu X; Wang H; Ji Q; Kong J; Wang X; Liu J ACS Appl Mater Interfaces; 2023 May; 15(19):23564-23572. PubMed ID: 37130097 [TBL] [Abstract][Full Text] [Related]
6. Optimized single-layer MoS Kim H; Kim W; O'Brien M; McEvoy N; Yim C; Marcia M; Hauke F; Hirsch A; Kim GT; Duesberg GS Nanoscale; 2018 Sep; 10(37):17557-17566. PubMed ID: 30226520 [TBL] [Abstract][Full Text] [Related]
7. High-Performance Wafer-Scale MoS Xu H; Zhang H; Guo Z; Shan Y; Wu S; Wang J; Hu W; Liu H; Sun Z; Luo C; Wu X; Xu Z; Zhang DW; Bao W; Zhou P Small; 2018 Nov; 14(48):e1803465. PubMed ID: 30328296 [TBL] [Abstract][Full Text] [Related]
8. Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure. Chen L; Xue F; Li X; Huang X; Wang L; Kou J; Wang ZL ACS Nano; 2016 Jan; 10(1):1546-51. PubMed ID: 26695840 [TBL] [Abstract][Full Text] [Related]
9. Three-dimensional patterning of MoS Zhu D; Qiao M; Yan J; Xie J; Guo H; Deng S; He G; Zhao Y; Luo M Nanoscale; 2023 Sep; 15(36):14837-14846. PubMed ID: 37646207 [TBL] [Abstract][Full Text] [Related]
10. Mobility Enhancement of Strained MoS Chen Y; Lu D; Kong L; Tao Q; Ma L; Liu L; Lu Z; Li Z; Wu R; Duan X; Liao L; Liu Y ACS Nano; 2023 Aug; 17(15):14954-14962. PubMed ID: 37459447 [TBL] [Abstract][Full Text] [Related]
11. Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. Liu H; Si M; Najmaei S; Neal AT; Du Y; Ajayan PM; Lou J; Ye PD Nano Lett; 2013 Jun; 13(6):2640-6. PubMed ID: 23679044 [TBL] [Abstract][Full Text] [Related]
12. Self-scrolling MoS Wang Z; Wu HH; Li Q; Besenbacher F; Zeng XC; Dong M Nanoscale; 2018 Oct; 10(38):18178-18185. PubMed ID: 30255900 [TBL] [Abstract][Full Text] [Related]
13. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825 [TBL] [Abstract][Full Text] [Related]
14. Strain Engineering for Enhancing Carrier Mobility in MoTe Shafi AM; Uddin MG; Cui X; Ali F; Ahmed F; Radwan M; Das S; Mehmood N; Sun Z; Lipsanen H Adv Sci (Weinh); 2023 Oct; 10(29):e2303437. PubMed ID: 37551999 [TBL] [Abstract][Full Text] [Related]
15. Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS Kim JK; Song Y; Kim TY; Cho K; Pak J; Choi BY; Shin J; Chung S; Lee T Nanotechnology; 2017 Nov; 28(47):47LT01. PubMed ID: 28994396 [TBL] [Abstract][Full Text] [Related]
16. Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors. Gu W; Shen J; Ma X Nanoscale Res Lett; 2014 Feb; 9(1):100. PubMed ID: 24576344 [TBL] [Abstract][Full Text] [Related]
17. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions. Liu B; Ma Y; Zhang A; Chen L; Abbas AN; Liu Y; Shen C; Wan H; Zhou C ACS Nano; 2016 May; 10(5):5153-60. PubMed ID: 27159780 [TBL] [Abstract][Full Text] [Related]
18. Femtosecond Laser Irradiation-Mediated MoS Huo J; Xiao Y; Sun T; Zou G; Shen D; Feng B; Lin L; Wang W; Zhao G; Liu L ACS Appl Mater Interfaces; 2021 Nov; 13(45):54246-54257. PubMed ID: 34726368 [TBL] [Abstract][Full Text] [Related]
19. Effect of Dielectric Interface on the Performance of MoS Li X; Xiong X; Li T; Li S; Zhang Z; Wu Y ACS Appl Mater Interfaces; 2017 Dec; 9(51):44602-44608. PubMed ID: 29199423 [TBL] [Abstract][Full Text] [Related]
20. Straining effects in MoS Hu Y; Zhang F; Titze M; Deng B; Li H; Cheng GJ Nanoscale; 2018 Mar; 10(12):5717-5724. PubMed ID: 29537031 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]