These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
143 related articles for article (PubMed ID: 35957028)
1. Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition. Kalam K; Otsus M; Kozlova J; Tarre A; Kasikov A; Rammula R; Link J; Stern R; Vinuesa G; Lendínez JM; Dueñas S; Castán H; Tamm A; Kukli K Nanomaterials (Basel); 2022 Jul; 12(15):. PubMed ID: 35957028 [TBL] [Abstract][Full Text] [Related]
2. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition. Kukli K; Aarik L; Vinuesa G; Dueñas S; Castán H; García H; Kasikov A; Ritslaid P; Piirsoo HM; Aarik J Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160824 [TBL] [Abstract][Full Text] [Related]
3. Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media. Kahro T; Raudonen K; Merisalu J; Tarre A; Ritslaid P; Kasikov A; Jõgiaas T; Käämbre T; Otsus M; Kozlova J; Alles H; Tamm A; Kukli K Nanomaterials (Basel); 2023 Apr; 13(8):. PubMed ID: 37110908 [TBL] [Abstract][Full Text] [Related]
4. Engineering of Ferroelectric HfO Weeks SL; Pal A; Narasimhan VK; Littau KA; Chiang T ACS Appl Mater Interfaces; 2017 Apr; 9(15):13440-13447. PubMed ID: 28337909 [TBL] [Abstract][Full Text] [Related]
5. Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone. Kalam K; Rammula R; Ritslaid P; Käämbre T; Link J; Stern R; Vinuesa G; Dueñas S; Castán H; Tamm A; Kukli K Nanotechnology; 2021 May; 32(33):. PubMed ID: 33962408 [TBL] [Abstract][Full Text] [Related]
6. Growth and properties of hafnicone and HfO(2)/hafnicone nanolaminate and alloy films using molecular layer deposition techniques. Lee BH; Anderson VR; George SM ACS Appl Mater Interfaces; 2014 Oct; 6(19):16880-7. PubMed ID: 25203487 [TBL] [Abstract][Full Text] [Related]
7. Atomic layer deposition of superparamagnetic ruthenium-doped iron oxide thin film. Tamm A; Tarre A; Kozlova J; Rähn M; Jõgiaas T; Kahro T; Link J; Stern R RSC Adv; 2021 Feb; 11(13):7521-7526. PubMed ID: 35423279 [TBL] [Abstract][Full Text] [Related]
8. Mechanical and Magnetic Properties of Double Layered Nanostructures of Tin and Zirconium Oxides Grown by Atomic Layer Deposition. Tamm A; Piirsoo HM; Jõgiaas T; Tarre A; Link J; Stern R; Kukli K Nanomaterials (Basel); 2021 Jun; 11(7):. PubMed ID: 34206394 [TBL] [Abstract][Full Text] [Related]
9. Magnetic and Electrical Performance of Atomic Layer Deposited Iron Erbium Oxide Thin Films. Tamm A; Kalam K; Seemen H; Kozlova J; Kukli K; Aarik J; Link J; Stern R; Dueñas S; Castán H ACS Omega; 2017 Dec; 2(12):8836-8842. PubMed ID: 31457414 [TBL] [Abstract][Full Text] [Related]
10. A multi-level memristor based on atomic layer deposition of iron oxide. Porro S; Bejtka K; Jasmin A; Fontana M; Milano G; Chiolerio A; Pirri CF; Ricciardi C Nanotechnology; 2018 Dec; 29(49):495201. PubMed ID: 30234499 [TBL] [Abstract][Full Text] [Related]
11. Atomic layer deposition and properties of ZrO Kalam K; Seemen H; Ritslaid P; Rähn M; Tamm A; Kukli K; Kasikov A; Link J; Stern R; Dueñas S; Castán H; García H Beilstein J Nanotechnol; 2018; 9():119-128. PubMed ID: 29441257 [TBL] [Abstract][Full Text] [Related]
12. Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane. Kukli K; Kemell M; Heikkilä MJ; Castán H; Dueñas S; Mizohata K; Ritala M; Leskelä M Nanotechnology; 2020 May; 31(19):195713. PubMed ID: 31978899 [TBL] [Abstract][Full Text] [Related]
13. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition. Niu G; Kim HD; Roelofs R; Perez E; Schubert MA; Zaumseil P; Costina I; Wenger C Sci Rep; 2016 Jun; 6():28155. PubMed ID: 27312225 [TBL] [Abstract][Full Text] [Related]
14. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications. Wang LG; Qian X; Cao YQ; Cao ZY; Fang GY; Li AD; Wu D Nanoscale Res Lett; 2015; 10():135. PubMed ID: 25852426 [TBL] [Abstract][Full Text] [Related]
16. Surface Passivation of Silicon Using HfO Zhang XY; Hsu CH; Lien SY; Chen SY; Huang W; Yang CH; Kung CY; Zhu WZ; Xiong FB; Meng XG Nanoscale Res Lett; 2017 Dec; 12(1):324. PubMed ID: 28476082 [TBL] [Abstract][Full Text] [Related]
17. Selective Pulsed Chemical Vapor Deposition of Water-Free TiO Huang J; Cho Y; Zhang Z; Jan A; Wong KT; Nemani SD; Yieh E; Kummel AC ACS Appl Mater Interfaces; 2022 Apr; 14(13):15716-15727. PubMed ID: 35316031 [TBL] [Abstract][Full Text] [Related]