225 related articles for article (PubMed ID: 35957515)
1. Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications.
Gan Z; Najafidehaghani E; Han SH; Shradha S; Abtahi F; Neumann C; Picker J; Vogl T; Hübner U; Eilenberger F; George A; Turchanin A
Small Methods; 2022 Sep; 6(9):e2200300. PubMed ID: 35957515
[TBL] [Abstract][Full Text] [Related]
2. Transition metal dichalcogenide growth via close proximity precursor supply.
O'Brien M; McEvoy N; Hallam T; Kim HY; Berner NC; Hanlon D; Lee K; Coleman JN; Duesberg GS
Sci Rep; 2014 Dec; 4():7374. PubMed ID: 25487822
[TBL] [Abstract][Full Text] [Related]
3. Location-selective growth of two-dimensional metallic/semiconducting transition metal dichalcogenide heterostructures.
Gong X; Zhao X; Pam ME; Yao H; Li Z; Geng D; Pennycook SJ; Shi Y; Yang HY
Nanoscale; 2019 Mar; 11(10):4183-4189. PubMed ID: 30789188
[TBL] [Abstract][Full Text] [Related]
4. Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.
Giannazzo F; Schilirò E; Greco G; Roccaforte F
Nanomaterials (Basel); 2020 Apr; 10(4):. PubMed ID: 32331313
[TBL] [Abstract][Full Text] [Related]
5. Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.
Lv R; Robinson JA; Schaak RE; Sun D; Sun Y; Mallouk TE; Terrones M
Acc Chem Res; 2015 Jan; 48(1):56-64. PubMed ID: 25490673
[TBL] [Abstract][Full Text] [Related]
6. Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics.
Kang T; Tang TW; Pan B; Liu H; Zhang K; Luo Z
ACS Mater Au; 2022 Nov; 2(6):665-685. PubMed ID: 36855548
[TBL] [Abstract][Full Text] [Related]
7. Growth Mechanism of Transition Metal Dichalcogenide Monolayers: The Role of Self-Seeding Fullerene Nuclei.
Cain JD; Shi F; Wu J; Dravid VP
ACS Nano; 2016 May; 10(5):5440-5. PubMed ID: 27138735
[TBL] [Abstract][Full Text] [Related]
8. Optical Constants and Structural Properties of Epitaxial MoS
Ermolaev GA; El-Sayed MA; Yakubovsky DI; Voronin KV; Romanov RI; Tatmyshevskiy MK; Doroshina NV; Nemtsov AB; Voronov AA; Novikov SM; Markeev AM; Tselikov GI; Vyshnevyy AA; Arsenin AV; Volkov VS
Nanomaterials (Basel); 2021 May; 11(6):. PubMed ID: 34071775
[TBL] [Abstract][Full Text] [Related]
9. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.
Samad L; Bladow SM; Ding Q; Zhuo J; Jacobberger RM; Arnold MS; Jin S
ACS Nano; 2016 Jul; 10(7):7039-46. PubMed ID: 27373305
[TBL] [Abstract][Full Text] [Related]
10. Large area, patterned growth of 2D MoS
Sharma A; Mahlouji R; Wu L; Verheijen MA; Vandalon V; Balasubramanyam S; Hofmann JP; Erwin Kessels WMM; Bol AA
Nanotechnology; 2020 Apr; 31(25):255603. PubMed ID: 32056974
[TBL] [Abstract][Full Text] [Related]
11. Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene.
Chen X; Park YJ; Das T; Jang H; Lee JB; Ahn JH
Nanoscale; 2016 Aug; 8(33):15181-8. PubMed ID: 27432242
[TBL] [Abstract][Full Text] [Related]
12. Rapid and Large-Area Visualization of Grain Boundaries in MoS
Fan X; Siris R; Hartwig O; Duesberg GS; Niklaus F
ACS Appl Mater Interfaces; 2020 Jul; 12(30):34049-34057. PubMed ID: 32618182
[TBL] [Abstract][Full Text] [Related]
13. Additive manufacturing of patterned 2D semiconductor through recyclable masked growth.
Guo Y; Shen PC; Su C; Lu AY; Hempel M; Han Y; Ji Q; Lin Y; Shi E; McVay E; Dou L; Muller DA; Palacios T; Li J; Ling X; Kong J
Proc Natl Acad Sci U S A; 2019 Feb; 116(9):3437-3442. PubMed ID: 30755527
[TBL] [Abstract][Full Text] [Related]
14. Controllable one-step growth of bilayer MoS
Zhang X; Xiao S; Nan H; Mo H; Wan X; Gu X; Ostrikov KK
Nanotechnology; 2018 Nov; 29(45):455707. PubMed ID: 30160236
[TBL] [Abstract][Full Text] [Related]
15. Enhanced Optoelectronic Performance of CVD-Grown Metal-Semiconductor NiTe
Zhai X; Xu X; Peng J; Jing F; Zhang Q; Liu H; Hu Z
ACS Appl Mater Interfaces; 2020 May; 12(21):24093-24101. PubMed ID: 32374152
[TBL] [Abstract][Full Text] [Related]
16. Effect of the Substrate on MoS
Paul S; Torsi R; Robinson JA; Momeni K
ACS Appl Mater Interfaces; 2022 Apr; 14(16):18835-18844. PubMed ID: 35421302
[TBL] [Abstract][Full Text] [Related]
17. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2.
Kim IS; Sangwan VK; Jariwala D; Wood JD; Park S; Chen KS; Shi F; Ruiz-Zepeda F; Ponce A; Jose-Yacaman M; Dravid VP; Marks TJ; Hersam MC; Lauhon LJ
ACS Nano; 2014 Oct; 8(10):10551-8. PubMed ID: 25223821
[TBL] [Abstract][Full Text] [Related]
18. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material.
Zhang X; Qiao XF; Shi W; Wu JB; Jiang DS; Tan PH
Chem Soc Rev; 2015 May; 44(9):2757-85. PubMed ID: 25679474
[TBL] [Abstract][Full Text] [Related]
19. Precision Modification of Monolayer Transition Metal Dichalcogenides via Environmental E-Beam Patterning.
Selhorst R; Yu Z; Moore D; Jiang J; Susner MA; Glavin NR; Pachter R; Terrones M; Maruyama B; Rao R
ACS Nano; 2023 Feb; 17(3):2958-2967. PubMed ID: 36689725
[TBL] [Abstract][Full Text] [Related]
20. Controllable Epitaxial Growth of Large-Area MoS
Zhang X; Huangfu L; Gu Z; Xiao S; Zhou J; Nan H; Gu X; Ostrikov KK
Small; 2021 May; 17(18):e2007312. PubMed ID: 33733558
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]