These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

127 related articles for article (PubMed ID: 35990151)

  • 1. Design of LDMOS Device Modeling Method Based on Neural Network.
    Liu T; Wen T; Zhang W; He N; Zhang S; Song H
    Comput Intell Neurosci; 2022; 2022():4988636. PubMed ID: 35990151
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer.
    Yang X; Cao T; Zhang X; Li T; Luo H
    Micromachines (Basel); 2023 Apr; 14(4):. PubMed ID: 37421120
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A TCAD Study on High-Voltage Superjunction LDMOS with Variable-K Dielectric Trench.
    Cao Z; Sun Q; Zhang H; Wang Q; Ma C; Jiao L
    Micromachines (Basel); 2022 May; 13(6):. PubMed ID: 35744457
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4.
    Kim JH; Park CH; Kim SM; Yang JW
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6732-6735. PubMed ID: 31027019
    [TBL] [Abstract][Full Text] [Related]  

  • 5. RRAM-based synapse devices for neuromorphic systems.
    Moon K; Lim S; Park J; Sung C; Oh S; Woo J; Lee J; Hwang H
    Faraday Discuss; 2019 Feb; 213(0):421-451. PubMed ID: 30426118
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.
    Hlaing H; Kim CH; Carta F; Nam CY; Barton RA; Petrone N; Hone J; Kymissis I
    Nano Lett; 2015 Jan; 15(1):69-74. PubMed ID: 25517922
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer.
    Wang Z; Yuan Z; Zhou X; Qiao M; Li Z; Zhang B
    Nanoscale Res Lett; 2019 Jan; 14(1):38. PubMed ID: 30689063
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region.
    Li L; Zhu B; Wu X; Ding S
    Micromachines (Basel); 2024 Jun; 15(7):. PubMed ID: 39064326
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Training and operation of an integrated neuromorphic network based on metal-oxide memristors.
    Prezioso M; Merrikh-Bayat F; Hoskins BD; Adam GC; Likharev KK; Strukov DB
    Nature; 2015 May; 521(7550):61-4. PubMed ID: 25951284
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Advanced Materials and Devices for Bioresorbable Electronics.
    Kang SK; Koo J; Lee YK; Rogers JA
    Acc Chem Res; 2018 May; 51(5):988-998. PubMed ID: 29664613
    [TBL] [Abstract][Full Text] [Related]  

  • 11. High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes.
    Kang SJ; Kocabas C; Ozel T; Shim M; Pimparkar N; Alam MA; Rotkin SV; Rogers JA
    Nat Nanotechnol; 2007 Apr; 2(4):230-6. PubMed ID: 18654268
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Spatially resolved Hall effect measurement in a single semiconductor nanowire.
    Storm K; Halvardsson F; Heurlin M; Lindgren D; Gustafsson A; Wu PM; Monemar B; Samuelson L
    Nat Nanotechnol; 2012 Nov; 7(11):718-22. PubMed ID: 23103932
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Fundamental research on semiconductor SiC and its applications to power electronics.
    Matsunami H
    Proc Jpn Acad Ser B Phys Biol Sci; 2020; 96(7):235-254. PubMed ID: 32788548
    [TBL] [Abstract][Full Text] [Related]  

  • 14. An ultra-low-voltage electronic implementation of inertial neuron model with nonmonotonous Liao's activation function.
    Kant NA; Dar MR; Khanday FA
    Network; 2015; 26(3-4):116-35. PubMed ID: 27030660
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.
    Geier ML; Prabhumirashi PL; McMorrow JJ; Xu W; Seo JW; Everaerts K; Kim CH; Marks TJ; Hersam MC
    Nano Lett; 2013 Oct; 13(10):4810-4. PubMed ID: 24020970
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays.
    Chen HT; Lu H; Azad AK; Averitt RD; Gossard AC; Trugman SA; O'Hara JF; Taylor AJ
    Opt Express; 2008 May; 16(11):7641-8. PubMed ID: 18545471
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Accurate Modeling Methodology of Laterally Diffused Metal-Oxide Semiconductor Leakage Current for Electro-Static Discharge Protection Circuit Design.
    Kim JH; Lee SM; Park CH
    J Nanosci Nanotechnol; 2021 Aug; 21(8):4230-4234. PubMed ID: 33714308
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Electrically controlled Goos-Hänchen shift of a light beam reflected from the metal-insulator-semiconductor structure.
    Luo C; Guo J; Wang Q; Xiang Y; Wen S
    Opt Express; 2013 May; 21(9):10430-9. PubMed ID: 23669899
    [TBL] [Abstract][Full Text] [Related]  

  • 19. 0.3-Volt Rail-to-Rail DDTA and Its Application in a Universal Filter and Quadrature Oscillator.
    Khateb F; Kumngern M; Kulej T; Biolek D
    Sensors (Basel); 2022 Mar; 22(7):. PubMed ID: 35408268
    [TBL] [Abstract][Full Text] [Related]  

  • 20. A Low-Power Spiking Neural Network Chip Based on a Compact LIF Neuron and Binary Exponential Charge Injector Synapse Circuits.
    Asghar MS; Arslan S; Kim H
    Sensors (Basel); 2021 Jun; 21(13):. PubMed ID: 34210045
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.