171 related articles for article (PubMed ID: 35995776)
1. Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length.
Song S; Yoon A; Ha JK; Yang J; Jang S; Leblanc C; Wang J; Sim Y; Jariwala D; Min SK; Lee Z; Kwon SY
Nat Commun; 2022 Aug; 13(1):4916. PubMed ID: 35995776
[TBL] [Abstract][Full Text] [Related]
2. Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe
Yang Z; Peng X; Wang J; Lin J; Zhang C; Tang B; Zhang J; Yang W
ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38676636
[TBL] [Abstract][Full Text] [Related]
3. From the metal to the channel: a study of carrier injection through the metal/2D MoS
Arutchelvan G; Lockhart de la Rosa CJ; Matagne P; Sutar S; Radu I; Huyghebaert C; De Gendt S; Heyns M
Nanoscale; 2017 Aug; 9(30):10869-10879. PubMed ID: 28731082
[TBL] [Abstract][Full Text] [Related]
4. Immunity to Contact Scaling in MoS
Cheng Z; Yu Y; Singh S; Price K; Noyce SG; Lin YC; Cao L; Franklin AD
Nano Lett; 2019 Aug; 19(8):5077-5085. PubMed ID: 31283241
[TBL] [Abstract][Full Text] [Related]
5. Formation of In-Plane Semiconductor-Metal Contacts in 2D Platinum Telluride by Converting PtTe
Lasek K; Li J; Ghorbani-Asl M; Khatun S; Alanwoko O; Pathirage V; Krasheninnikov AV; Batzill M
Nano Lett; 2022 Dec; 22(23):9571-9577. PubMed ID: 36399113
[TBL] [Abstract][Full Text] [Related]
6. Improved Contacts and Device Performance in MoS
Andrews K; Bowman A; Rijal U; Chen PY; Zhou Z
ACS Nano; 2020 May; 14(5):6232-6241. PubMed ID: 32320204
[TBL] [Abstract][Full Text] [Related]
7. Two-step CVD synthesis of NiTe
Guo Y; Kang L; Zeng Q; Xu M; Li L; Wu Y; Yang J; Zhang Y; Qi X; Zhao W; Zhang Z; Liu Z
Nanotechnology; 2021 Feb; ():. PubMed ID: 33626522
[TBL] [Abstract][Full Text] [Related]
8. Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition.
English CD; Shine G; Dorgan VE; Saraswat KC; Pop E
Nano Lett; 2016 Jun; 16(6):3824-30. PubMed ID: 27232636
[TBL] [Abstract][Full Text] [Related]
9. Approaching Ohmic Contacts for Ideal Monolayer MoS
Xiao J; Chen K; Zhang X; Liu X; Yu H; Gao L; Hong M; Gu L; Zhang Z; Zhang Y
Small Methods; 2023 Nov; 7(11):e2300611. PubMed ID: 37551044
[TBL] [Abstract][Full Text] [Related]
10. Two-step chemical vapor deposition synthesis of NiTe
Guo Y; Kang L; Zeng Q; Xu M; Li L; Wu Y; Yang J; Zhang Y; Qi X; Zhao W; Zhang Z; Liu Z
Nanotechnology; 2021 Mar; 32(23):235204. PubMed ID: 33739939
[TBL] [Abstract][Full Text] [Related]
11. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride.
Ruzmetov D; Zhang K; Stan G; Kalanyan B; Bhimanapati GR; Eichfeld SM; Burke RA; Shah PB; O'Regan TP; Crowne FJ; Birdwell AG; Robinson JA; Davydov AV; Ivanov TG
ACS Nano; 2016 Mar; 10(3):3580-8. PubMed ID: 26866442
[TBL] [Abstract][Full Text] [Related]
12. ALD-grown two-dimensional TiS
Mahlouji R; Kessels WMME; Sagade AA; Bol AA
Nanoscale Adv; 2023 Sep; 5(18):4718-4727. PubMed ID: 37705798
[TBL] [Abstract][Full Text] [Related]
13. Clean Interface Contact Using a ZnO Interlayer for Low-Contact-Resistance MoS
Jang J; Kim Y; Chee SS; Kim H; Whang D; Kim GH; Yun SJ
ACS Appl Mater Interfaces; 2020 Jan; 12(4):5031-5039. PubMed ID: 31891246
[TBL] [Abstract][Full Text] [Related]
14. High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers.
Han SS; Shin JC; Ghanipour A; Lee JH; Lee SG; Kim JH; Chung HS; Lee GH; Jung Y
ACS Appl Mater Interfaces; 2024 Jul; ():. PubMed ID: 38949620
[TBL] [Abstract][Full Text] [Related]
15. Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo
Choi S; Kim YJ; Jeon J; Lee BH; Cho JH; Lee S
ACS Appl Mater Interfaces; 2019 Dec; 11(50):47190-47196. PubMed ID: 31763812
[TBL] [Abstract][Full Text] [Related]
16. Reversible Transition of Semiconducting PtSe
Han SS; Sattar S; Kireev D; Shin JC; Bae TS; Ryu HI; Cao J; Shum AK; Kim JH; Canali CM; Akinwande D; Lee GH; Chung HS; Jung Y
Nano Lett; 2024 Feb; 24(6):1891-1900. PubMed ID: 38150559
[TBL] [Abstract][Full Text] [Related]
17. Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.
Liu H; Si M; Deng Y; Neal AT; Du Y; Najmaei S; Ajayan PM; Lou J; Ye PD
ACS Nano; 2014 Jan; 8(1):1031-8. PubMed ID: 24351134
[TBL] [Abstract][Full Text] [Related]
18. Improved contacts to p-type MoS
Zhang S; Le ST; Richter CA; Hacker CA
Appl Phys Lett; 2019; 115(7):. PubMed ID: 32116333
[TBL] [Abstract][Full Text] [Related]
19. Electrochemical Construction of Edge-Contacted Metal-Semiconductor Junctions with Low Contact Barrier.
Ping X; Liu W; Wu Y; Xu G; Chen F; Li G; Jiao L
Adv Mater; 2022 Aug; 34(31):e2202484. PubMed ID: 35642101
[TBL] [Abstract][Full Text] [Related]
20. A "Click" Reaction to Engineer MoS
Miao J; Wu L; Bian Z; Zhu Q; Zhang T; Pan X; Hu J; Xu W; Wang Y; Xu Y; Yu B; Ji W; Zhang X; Qiao J; Samorì P; Zhao Y
ACS Nano; 2022 Dec; 16(12):20647-20655. PubMed ID: 36455073
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]