These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
216 related articles for article (PubMed ID: 36014648)
1. Enhanced Electrical Performance and Stability of Solution-Processed Thin-Film Transistors with In Li S; Zhang X; Zhang P; Song G; Yuan L Nanomaterials (Basel); 2022 Aug; 12(16):. PubMed ID: 36014648 [TBL] [Abstract][Full Text] [Related]
2. Electrical performance of La-doped In Du H; Tuokedaerhan K; Zhang R RSC Adv; 2024 May; 14(22):15483-15490. PubMed ID: 38807708 [TBL] [Abstract][Full Text] [Related]
4. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture. Yu X; Zhou N; Smith J; Lin H; Stallings K; Yu J; Marks TJ; Facchetti A ACS Appl Mater Interfaces; 2013 Aug; 5(16):7983-8. PubMed ID: 23876148 [TBL] [Abstract][Full Text] [Related]
5. Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor. Lee SJ; Ko J; Nam KH; Kim T; Lee SH; Kim JH; Chae GS; Han H; Kim YS; Myoung JM ACS Appl Mater Interfaces; 2016 May; 8(20):12894-900. PubMed ID: 27120010 [TBL] [Abstract][Full Text] [Related]
6. Water-Processed Ultrathin Crystalline Indium-Boron-Oxide Channel for High-Performance Thin-Film Transistor Applications. Xu W; Peng T; Li Y; Xu F; Zhang Y; Zhao C; Fang M; Han S; Zhu D; Cao P; Liu W; Lu Y Nanomaterials (Basel); 2022 Mar; 12(7):. PubMed ID: 35407244 [TBL] [Abstract][Full Text] [Related]
7. One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature. Wang C; Li Y; Jin Y; Guo G; Song Y; Huang H; He H; Wang A Nanomaterials (Basel); 2022 Oct; 12(19):. PubMed ID: 36234608 [TBL] [Abstract][Full Text] [Related]
8. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach. Cho MH; Choi CH; Jeong JK ACS Appl Mater Interfaces; 2022 Apr; 14(16):18646-18661. PubMed ID: 35426670 [TBL] [Abstract][Full Text] [Related]
9. High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In Xu X; He G; Jiang S; Wang L; Wang W; Liu Y; Gao Q RSC Adv; 2022 May; 12(24):14986-14997. PubMed ID: 35702432 [TBL] [Abstract][Full Text] [Related]
10. Sublimation-doping with super bases for high-performance solution-processed heterojunction oxide thin film transistors. Lee J; Jae M; Hassan SZ; Chung DS Mater Horiz; 2021 Nov; 8(11):3105-3112. PubMed ID: 34515283 [TBL] [Abstract][Full Text] [Related]
11. High-Performance and Radiation-Hardened Solution-Processed ZrLaO Gate Dielectrics for Large-Area Applications. Fang Y; Zhao C; Mitrovic IZ; Zhao C ACS Appl Mater Interfaces; 2021 Oct; 13(42):50101-50110. PubMed ID: 34636544 [TBL] [Abstract][Full Text] [Related]
12. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric. Liu A; Liu GX; Zhu HH; Xu F; Fortunato E; Martins R; Shan FK ACS Appl Mater Interfaces; 2014 Oct; 6(20):17364-9. PubMed ID: 25285983 [TBL] [Abstract][Full Text] [Related]
13. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors. Lim K; Choi P; Kim S; Kim H; Kim M; Lee J; Hyeon Y; Koo K; Choi B J Nanosci Nanotechnol; 2018 Sep; 18(9):5913-5918. PubMed ID: 29677716 [TBL] [Abstract][Full Text] [Related]
14. All-Water-Driven High-k HfO Alam F; He G; Yan J; Wang W Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839062 [TBL] [Abstract][Full Text] [Related]
15. Fully solution-induced high performance indium oxide thin film transistors with ZrO Zhu L; He G; Lv J; Fortunato E; Martins R RSC Adv; 2018 May; 8(30):16788-16799. PubMed ID: 35540525 [TBL] [Abstract][Full Text] [Related]
16. Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors. Li Y; Zhao C; Zhu D; Cao P; Han S; Lu Y; Fang M; Liu W; Xu W Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32443597 [TBL] [Abstract][Full Text] [Related]
18. Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film Transistors. Shin MG; Bae KH; Jeong HS; Kim DH; Cha HS; Kwon HI Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 33008074 [TBL] [Abstract][Full Text] [Related]
19. High-Performance Indium-Based Oxide Transistors with Multiple Channels Through Nanolaminate Structure Fabricated by Plasma-Enhanced Atomic Layer Deposition. Cho MH; Choi CH; Kim MJ; Hur JS; Kim T; Jeong JK ACS Appl Mater Interfaces; 2023 Apr; 15(15):19137-19151. PubMed ID: 37023364 [TBL] [Abstract][Full Text] [Related]
20. Switching Enhancement via a Back-Channel Phase-Controlling Layer for p-Type Copper Oxide Thin-Film Transistors. Min WK; Park SP; Kim HJ; Lee JH; Park K; Kim D; Kim KW; Kim HJ ACS Appl Mater Interfaces; 2020 Jun; 12(22):24929-24939. PubMed ID: 32390437 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]