These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

132 related articles for article (PubMed ID: 36014746)

  • 1. Study on the Electrical Conduction Mechanism of Unipolar Resistive Switching Prussian White Thin Films.
    Avila LB; Serrano Arambulo PC; Dantas A; Cuevas-Arizaca EE; Kumar D; Müller CK
    Nanomaterials (Basel); 2022 Aug; 12(16):. PubMed ID: 36014746
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Resistive switching characteristics of ZnO nanowires.
    Yoo EJ; Shin IK; Yoon TS; Choi YJ; Kang CJ
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9459-64. PubMed ID: 25971083
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Uncovering Two Competing Switching Mechanisms for Epitaxial and Ultrathin Strontium Titanate-Based Resistive Switching Bits.
    Kubicek M; Schmitt R; Messerschmitt F; Rupp JL
    ACS Nano; 2015 Nov; 9(11):10737-48. PubMed ID: 26448096
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Resistive Switching in Electrodeposited Prussian Blue Layers.
    Avila LB; Müller CK; Hildebrand D; Faita FL; Baggio BF; Cid CCP; Pasa AA
    Materials (Basel); 2020 Dec; 13(24):. PubMed ID: 33317130
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature.
    Kubicek M; Taibl S; Navickas E; Hutter H; Fafilek G; Fleig J
    J Electroceram; 2017; 39(1):197-209. PubMed ID: 29367832
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
    Zhao X; Li Y; Ai C; Wen D
    Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Engineering of self-rectifying filamentary resistive switching in LiNbO
    You T; Huang K; Zhao X; Yi A; Chen C; Ren W; Jin T; Lin J; Shuai Y; Luo W; Zhou M; Yu W; Ou X
    Sci Rep; 2019 Dec; 9(1):19134. PubMed ID: 31836794
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO
    Rosário CMM; Thöner B; Schönhals A; Menzel S; Meledin A; Barradas NP; Alves E; Mayer J; Wuttig M; Waser R; Sobolev NA; Wouters DJ
    Nanoscale; 2019 Sep; 11(36):16978-16990. PubMed ID: 31498350
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures.
    Dias C; Guerra LM; Bordalo BD; Lv H; Ferraria AM; Botelho do Rego AM; Cardoso S; Freitas PP; Ventura J
    Phys Chem Chem Phys; 2017 May; 19(17):10898-10904. PubMed ID: 28401238
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Local electrical conduction in polycrystalline La-doped BiFeO₃ thin films.
    Zhou MX; Chen B; Sun HB; Wan JG; Li ZW; Liu JM; Song FQ; Wang GH
    Nanotechnology; 2013 Jun; 24(22):225702. PubMed ID: 23637078
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Co nanoparticles induced resistive switching and magnetism for the electrochemically deposited polypyrrole composite films.
    Xu Z; Gao M; Yu L; Lu L; Xu X; Jiang Y
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17823-30. PubMed ID: 25245009
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Resistive switching characteristics of HfO2-based memory devices on flexible plastics.
    Han Y; Cho K; Park S; Kim S
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8191-5. PubMed ID: 25958498
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices.
    Celano U; Goux L; Opsomer K; Belmonte A; Iapichino M; Detavernier C; Jurczak M; Vandervorst W
    Nanoscale; 2013 Nov; 5(22):11187-92. PubMed ID: 24080868
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
    Li Y; Long S; Liu Q; Lv H; Liu M
    Small; 2017 Sep; 13(35):. PubMed ID: 28417548
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices.
    Koveshnikov S; Kononenko O; Soltanovich O; Kapitanova O; Knyazev M; Volkov V; Yakimov E
    Nanomaterials (Basel); 2022 Oct; 12(20):. PubMed ID: 36296817
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Dynamic evolution of conducting nanofilament in resistive switching memories.
    Chen JY; Hsin CL; Huang CW; Chiu CH; Huang YT; Lin SJ; Wu WW; Chen LJ
    Nano Lett; 2013 Aug; 13(8):3671-7. PubMed ID: 23855543
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction.
    Yamasaki T; Takaoka R; Iimura S; Kim J; Hiramatsu H; Hosono H
    ACS Appl Mater Interfaces; 2022 May; 14(17):19766-19773. PubMed ID: 35438497
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.
    Chen KH; Kao MC; Huang SJ; Li JZ
    Materials (Basel); 2017 Dec; 10(12):. PubMed ID: 29231867
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.
    Hu W; Zou L; Chen X; Qin N; Li S; Bao D
    ACS Appl Mater Interfaces; 2014 Apr; 6(7):5012-7. PubMed ID: 24635893
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Air-Stable Lead-Free Perovskite Thin Film Based on CsBi
    Xiong Z; Hu W; She Y; Lin Q; Hu L; Tang X; Sun K
    ACS Appl Mater Interfaces; 2019 Aug; 11(33):30037-30044. PubMed ID: 31342747
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.