229 related articles for article (PubMed ID: 36080036)
1. Improved Ferroelectric Properties in Hf
Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M
Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036
[TBL] [Abstract][Full Text] [Related]
2. Reduced fatigue and leakage of ferroelectric TiN/Hf
Hsain HA; Lee Y; Lancaster S; Lomenzo PD; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
Nanotechnology; 2023 Jan; 34(12):. PubMed ID: 36538824
[TBL] [Abstract][Full Text] [Related]
3. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf
Kim SJ; Mohan J; Kim HS; Hwang SM; Kim N; Jung YC; Sahota A; Kim K; Yu HY; Cha PR; Young CD; Choi R; Ahn J; Kim J
Materials (Basel); 2020 Jul; 13(13):. PubMed ID: 32630791
[TBL] [Abstract][Full Text] [Related]
4. Interface-engineered ferroelectricity of epitaxial Hf
Shi S; Xi H; Cao T; Lin W; Liu Z; Niu J; Lan D; Zhou C; Cao J; Su H; Zhao T; Yang P; Zhu Y; Yan X; Tsymbal EY; Tian H; Chen J
Nat Commun; 2023 Mar; 14(1):1780. PubMed ID: 36997572
[TBL] [Abstract][Full Text] [Related]
5. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.
Chernikova A; Kozodaev M; Markeev A; Negrov D; Spiridonov M; Zarubin S; Bak O; Buragohain P; Lu H; Suvorova E; Gruverman A; Zenkevich A
ACS Appl Mater Interfaces; 2016 Mar; 8(11):7232-7. PubMed ID: 26931409
[TBL] [Abstract][Full Text] [Related]
6. A new approach to achieving strong ferroelectric properties in TiN/Hf
Kim H; Kashir A; Oh S; Hwang H
Nanotechnology; 2021 Jan; 32(5):055703. PubMed ID: 33053526
[TBL] [Abstract][Full Text] [Related]
7. Improving the ferroelectric properties of Lu doped Hf
Xiao Y; Yang L; Jiang Y; Liu S; Li G; Ouyang J; Tang M
Nanotechnology; 2024 Jul; 35(38):. PubMed ID: 38925105
[TBL] [Abstract][Full Text] [Related]
8. Improved Ferroelectric Switching Endurance of La-Doped Hf
Chernikova AG; Kozodaev MG; Negrov DV; Korostylev EV; Park MH; Schroeder U; Hwang CS; Markeev AM
ACS Appl Mater Interfaces; 2018 Jan; 10(3):2701-2708. PubMed ID: 29282976
[TBL] [Abstract][Full Text] [Related]
9. Wake-Up Free Ultrathin Ferroelectric Hf
Chouprik A; Mikheev V; Korostylev E; Kozodaev M; Zarubin S; Vinnik D; Gudkova S; Negrov D
Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947671
[TBL] [Abstract][Full Text] [Related]
10. Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing.
Joh H; Jung M; Hwang J; Goh Y; Jung T; Jeon S
ACS Appl Mater Interfaces; 2022 Jan; 14(1):1326-1333. PubMed ID: 34928573
[TBL] [Abstract][Full Text] [Related]
11. Enhanced Switching Reliability of Hf
Huang F; Saini B; Yu Z; Yoo C; Thampy V; He X; Baniecki JD; Tsai W; Meng AC; McIntyre PC; Wong S
ACS Appl Mater Interfaces; 2023 Nov; 15(43):50246-50253. PubMed ID: 37856882
[TBL] [Abstract][Full Text] [Related]
12. Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys.
Yu Z; Saini B; Liu Y; Huang F; Mehta A; Baniecki JD; Wong HP; Tsai W; McIntyre PC
ACS Appl Mater Interfaces; 2022 Nov; 14(47):53057-53064. PubMed ID: 36384298
[TBL] [Abstract][Full Text] [Related]
13. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films.
Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477
[TBL] [Abstract][Full Text] [Related]
14. Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf
Matveyev Y; Mikheev V; Negrov D; Zarubin S; Kumar A; Grimley ED; LeBeau JM; Gloskovskii A; Tsymbal EY; Zenkevich A
Nanoscale; 2019 Nov; 11(42):19814-19822. PubMed ID: 31624822
[TBL] [Abstract][Full Text] [Related]
15. Epitaxial Integration on Si(001) of Ferroelectric Hf
Lyu J; Fina I; Fontcuberta J; Sánchez F
ACS Appl Mater Interfaces; 2019 Feb; 11(6):6224-6229. PubMed ID: 30657323
[TBL] [Abstract][Full Text] [Related]
16. Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.
Zhang X; Chen L; Sun QQ; Wang LH; Zhou P; Lu HL; Wang PF; Ding SJ; Zhang DW
Nanoscale Res Lett; 2015; 10():25. PubMed ID: 25852322
[TBL] [Abstract][Full Text] [Related]
17. Quantification of Crystalline Phases in Hf
Cervasio R; Amzallag E; Verseils M; Hemme P; Brubach JB; Infante IC; Segantini G; Rojo Romeo P; Coati A; Vlad A; Garreau Y; Resta A; Vilquin B; Creuze J; Roy P
ACS Appl Mater Interfaces; 2024 Jan; 16(3):3829-3840. PubMed ID: 38214484
[TBL] [Abstract][Full Text] [Related]
18. Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO
Zhang Y; Fan Z; Wang D; Wang J; Zou Z; Li Y; Li Q; Tao R; Chen D; Zeng M; Gao X; Dai J; Zhou G; Lu X; Liu JM
ACS Appl Mater Interfaces; 2020 Sep; 12(36):40510-40517. PubMed ID: 32805812
[TBL] [Abstract][Full Text] [Related]
19. A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf
Kim BS; Hyun SD; Moon T; Do Kim K; Lee YH; Park HW; Lee YB; Roh J; Kim BY; Kim HH; Park MH; Hwang CS
Nanoscale Res Lett; 2020 Apr; 15(1):72. PubMed ID: 32266598
[TBL] [Abstract][Full Text] [Related]
20. Improved polarization and endurance in ferroelectric Hf
Song T; Tan H; Estandía S; Gàzquez J; Gich M; Dix N; Fina I; Sánchez F
Nanoscale; 2022 Feb; 14(6):2337-2343. PubMed ID: 35088065
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]