131 related articles for article (PubMed ID: 36103775)
1. Nanoporous GaN on
Lee KJ; Nakazato Y; Chun J; Wen X; Meng C; Soman R; Noshin M; Chowdhury S
Nanotechnology; 2022 Oct; 33(50):. PubMed ID: 36103775
[TBL] [Abstract][Full Text] [Related]
2. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
Lee HP; Perozek J; Rosario LD; Bayram C
Sci Rep; 2016 Nov; 6():37588. PubMed ID: 27869222
[TBL] [Abstract][Full Text] [Related]
3. Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
Hospodková A; Hájek F; Hubáček T; Gedeonová Z; Hubík P; Hývl M; Pangrác J; Dominec F; Košutová T
ACS Appl Mater Interfaces; 2023 Apr; 15(15):19646-19652. PubMed ID: 37022802
[TBL] [Abstract][Full Text] [Related]
4. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
Schilirò E; Giannazzo F; Di Franco S; Greco G; Fiorenza P; Roccaforte F; Prystawko P; Kruszewski P; Leszczynski M; Cora I; Pécz B; Fogarassy Z; Lo Nigro R
Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947665
[TBL] [Abstract][Full Text] [Related]
5. High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy.
Zhang YY; Zheng YX; Lai JY; Seo JH; Lee KH; Tan CS; An S; Shin SH; Son B; Kim M
ACS Nano; 2021 May; 15(5):8386-8396. PubMed ID: 33908251
[TBL] [Abstract][Full Text] [Related]
6. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.
Fisichella G; Greco G; Roccaforte F; Giannazzo F
Nanoscale; 2014 Aug; 6(15):8671-80. PubMed ID: 24946753
[TBL] [Abstract][Full Text] [Related]
7. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
Heo C; Jang J; Lee K; So B; Lee K; Ko K; Nam O
J Nanosci Nanotechnol; 2017 Jan; 17(1):577-80. PubMed ID: 29630184
[TBL] [Abstract][Full Text] [Related]
8. Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.
Kaushik PK; Singh SK; Gupta A; Basu A; Chang EY
Nanoscale Res Lett; 2021 Oct; 16(1):159. PubMed ID: 34669088
[TBL] [Abstract][Full Text] [Related]
9. Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors.
Im KS; Reddy MSP; Choi J; Hwang Y; Roh JS; An SJ; Lee JH
J Nanosci Nanotechnol; 2020 Jul; 20(7):4282-4286. PubMed ID: 31968458
[TBL] [Abstract][Full Text] [Related]
10. Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films.
Huang S; Zhang Y; Leung B; Yuan G; Wang G; Jiang H; Fan Y; Sun Q; Wang J; Xu K; Han J
ACS Appl Mater Interfaces; 2013 Nov; 5(21):11074-9. PubMed ID: 24125198
[TBL] [Abstract][Full Text] [Related]
11. Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment.
Tajalli A; Borga M; Meneghini M; De Santi C; Benazzi D; Besendörfer S; Püsche R; Derluyn J; Degroote S; Germain M; Kabouche R; Abid I; Meissner E; Zanoni E; Medjdoub F; Meneghesso G
Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31963553
[TBL] [Abstract][Full Text] [Related]
12. The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor.
Zhang H; Yang S; Sheng K
Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32316694
[TBL] [Abstract][Full Text] [Related]
13. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction.
Sun T; Luo X; Wei J; Yang C; Zhang B
Nanoscale Res Lett; 2020 Jul; 15(1):149. PubMed ID: 32676687
[TBL] [Abstract][Full Text] [Related]
14. Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform.
Lyu Q; Jiang H; Lau KM
Opt Express; 2021 Mar; 29(6):8358-8364. PubMed ID: 33820283
[TBL] [Abstract][Full Text] [Related]
15. Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas.
Yalamarthy AS; Muñoz Rojo M; Bruefach A; Boone D; Dowling KM; Satterthwaite PF; Goldhaber-Gordon D; Pop E; Senesky DG
Nano Lett; 2019 Jun; 19(6):3770-3776. PubMed ID: 31088057
[TBL] [Abstract][Full Text] [Related]
16. Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells.
Tu SJ; Sheu JK; Lee ML; Yang CC; Chang KH; Yeh YH; Huang FW; Lai WC
Opt Express; 2011 Jun; 19(13):12719-26. PubMed ID: 21716514
[TBL] [Abstract][Full Text] [Related]
17. Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps.
Song YL; Reddy MK; Chang LM; Sheu G
Micromachines (Basel); 2021 Jun; 12(7):. PubMed ID: 34206818
[TBL] [Abstract][Full Text] [Related]
18. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy.
Tanaka S; Aoyama K; Ichihashi M; Arai S; Honda Y; Sawaki N
J Electron Microsc (Tokyo); 2007 Aug; 56(4):141-4. PubMed ID: 17962377
[TBL] [Abstract][Full Text] [Related]
19. GaN/NbN epitaxial semiconductor/superconductor heterostructures.
Yan R; Khalsa G; Vishwanath S; Han Y; Wright J; Rouvimov S; Katzer DS; Nepal N; Downey BP; Muller DA; Xing HG; Meyer DJ; Jena D
Nature; 2018 Mar; 555(7695):183-189. PubMed ID: 29516996
[TBL] [Abstract][Full Text] [Related]
20. Fabrication of current confinement aperture structure by transforming a conductive GaN:Si epitaxial layer into an insulating GaOx layer.
Lin CF; Lee WC; Shieh BC; Chen D; Wang D; Han J
ACS Appl Mater Interfaces; 2014 Dec; 6(24):22235-42. PubMed ID: 25470494
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]