These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
297 related articles for article (PubMed ID: 36121320)
21. Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects. Huang F; Saini B; Wan L; Lu H; He X; Qin S; Tsai W; Gruverman A; Meng AC; Wong HP; McIntyre PC; Wong S ACS Nano; 2024 Jul; 18(27):17600-17610. PubMed ID: 38916257 [TBL] [Abstract][Full Text] [Related]
22. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films. Chen HY; Jiang YS; Chuang CH; Mo CL; Wang TY; Lin HC; Chen MJ Nanotechnology; 2023 Dec; 35(10):. PubMed ID: 37995361 [TBL] [Abstract][Full Text] [Related]
23. Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO Zhang Y; Fan Z; Wang D; Wang J; Zou Z; Li Y; Li Q; Tao R; Chen D; Zeng M; Gao X; Dai J; Zhou G; Lu X; Liu JM ACS Appl Mater Interfaces; 2020 Sep; 12(36):40510-40517. PubMed ID: 32805812 [TBL] [Abstract][Full Text] [Related]
24. Mesoscopic-scale grain formation in HfO Kobayashi M; Wu J; Sawabe Y; Takuya S; Hiramoto T Nano Converg; 2022 Nov; 9(1):50. PubMed ID: 36370230 [TBL] [Abstract][Full Text] [Related]
26. Improving the ferroelectric properties of Lu doped Hf Xiao Y; Yang L; Jiang Y; Liu S; Li G; Ouyang J; Tang M Nanotechnology; 2024 Jul; 35(38):. PubMed ID: 38925105 [TBL] [Abstract][Full Text] [Related]
27. Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO Dai S; Yang Q; Zeng B; Zheng S; Zhong X; Xiang J; Gao J; Zhao J; Liao J; Liao M; Zhou Y ACS Appl Mater Interfaces; 2022 Nov; 14(45):51459-51467. PubMed ID: 36318591 [TBL] [Abstract][Full Text] [Related]
28. Experimental study of threshold voltage shift for Si:HfO Jung T; Shin C Nanotechnology; 2021 Jun; 32(37):. PubMed ID: 34098542 [TBL] [Abstract][Full Text] [Related]
31. Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors. Mulaosmanovic H; Mikolajick T; Slesazeck S ACS Appl Mater Interfaces; 2018 Jul; 10(28):23997-24002. PubMed ID: 29947210 [TBL] [Abstract][Full Text] [Related]
32. Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films. Lee H; Choe DH; Jo S; Kim JH; Lee HH; Shin HJ; Park Y; Kang S; Cho Y; Park S; Moon T; Eom D; Leem M; Kim Y; Heo J; Lee E; Kim H ACS Appl Mater Interfaces; 2021 Aug; 13(30):36499-36506. PubMed ID: 34310129 [TBL] [Abstract][Full Text] [Related]
33. Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys. Yu Z; Saini B; Liu Y; Huang F; Mehta A; Baniecki JD; Wong HP; Tsai W; McIntyre PC ACS Appl Mater Interfaces; 2022 Nov; 14(47):53057-53064. PubMed ID: 36384298 [TBL] [Abstract][Full Text] [Related]
34. High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide. Kim JY; Choi MJ; Lee YJ; Park SH; Choi S; Baek JH; Im IH; Kim SJ; Jang HW ACS Appl Mater Interfaces; 2024 Apr; 16(15):19057-19067. PubMed ID: 38564293 [TBL] [Abstract][Full Text] [Related]
35. Interface-engineered ferroelectricity of epitaxial Hf Shi S; Xi H; Cao T; Lin W; Liu Z; Niu J; Lan D; Zhou C; Cao J; Su H; Zhao T; Yang P; Zhu Y; Yan X; Tsymbal EY; Tian H; Chen J Nat Commun; 2023 Mar; 14(1):1780. PubMed ID: 36997572 [TBL] [Abstract][Full Text] [Related]
36. Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf Chouprik A; Kirtaev R; Korostylev E; Mikheev V; Spiridonov M; Negrov D Nanomaterials (Basel); 2022 Apr; 12(9):. PubMed ID: 35564195 [TBL] [Abstract][Full Text] [Related]
37. Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy. Collins L; Celano U ACS Appl Mater Interfaces; 2020 Sep; 12(37):41659-41665. PubMed ID: 32870659 [TBL] [Abstract][Full Text] [Related]