These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

113 related articles for article (PubMed ID: 36128726)

  • 1. Molecular-Shape-Controlled Binary to Ternary Resistive Random-Access Memory Switching of N-Containing Heteroaromatic Semiconductors.
    Li Y; Pan Y; Zhang C; Shi Z; Ma C; Ling S; Teng M; Zhang Q; Jiang Y; Zhao R; Zhang Q
    ACS Appl Mater Interfaces; 2022 Oct; 14(39):44676-44684. PubMed ID: 36128726
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature.
    Park Y; Lee JS
    ACS Appl Mater Interfaces; 2017 Feb; 9(7):6207-6212. PubMed ID: 28078883
    [TBL] [Abstract][Full Text] [Related]  

  • 3. MoS
    Chai J; Tong S; Li C; Manzano C; Li B; Liu Y; Lin M; Wong L; Cheng J; Wu J; Lau A; Xie Q; Pennycook SJ; Medina H; Yang M; Wang S; Chi D
    Adv Mater; 2020 Oct; 32(42):e2002704. PubMed ID: 32851704
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices.
    Ambrosi E; Bricalli A; Laudato M; Ielmini D
    Faraday Discuss; 2019 Feb; 213(0):87-98. PubMed ID: 30364922
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effective Transport Tunnels Achieved by 1,2,4,5-Tetrazine-Induced Intermolecular C-H...N Interaction and Anion Radicals for Stable ReRAM Performance.
    Shen J; Xue F; Wang G; Li Y; Dong H; Zhang Q
    ACS Appl Mater Interfaces; 2022 Feb; 14(6):8218-8225. PubMed ID: 35107274
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Facile Achievement of Complementary Resistive Switching in Block Copolymer Micelle-Based Resistive Memories.
    Choi HH; Kim HJ; Oh J; Kim M; Kim Y; Jho JY; Lee KH; Son JG; Park JH
    Macromol Rapid Commun; 2022 Apr; 43(7):e2100686. PubMed ID: 35084074
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Modified Donor End Caps for Binary-to-Ternary WORM Memory Conversion in N-Heteroaromatic Systems.
    Gayathri R; Akshaya M; Imran PM; Nagarajan S
    Chemphyschem; 2024 Jun; 25(11):e202400062. PubMed ID: 38507519
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots.
    Banerjee W; Maikap S; Lai CS; Chen YY; Tien TC; Lee HY; Chen WS; Chen FT; Kao MJ; Tsai MJ; Yang JR
    Nanoscale Res Lett; 2012 Mar; 7(1):194. PubMed ID: 22439604
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Emerging memories: resistive switching mechanisms and current status.
    Jeong DS; Thomas R; Katiyar RS; Scott JF; Kohlstedt H; Petraru A; Hwang CS
    Rep Prog Phys; 2012 Jul; 75(7):076502. PubMed ID: 22790779
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Annealing Effect of Al2O3 Tunnel Barriers in HfO2-Based ReRAM Devices on Nonlinear Resistive Switching Characteristics.
    Park S; Cho K; Jung J; Kim S
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7569-72. PubMed ID: 26726373
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Scaling of resistive random access memory devices beyond 100 nm
    Hazra P; Jinesh KB
    Nanotechnology; 2018 Dec; 29(49):495202. PubMed ID: 30289766
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-Compliance.
    Kim MK; Lee JS
    ACS Appl Mater Interfaces; 2016 Dec; 8(48):32918-32924. PubMed ID: 27934194
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Resistive Switching Memory Devices Based on Proteins.
    Wang H; Meng F; Zhu B; Leow WR; Liu Y; Chen X
    Adv Mater; 2015 Dec; 27(46):7670-6. PubMed ID: 25753764
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode.
    Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Ternary Flexible Electro-resistive Memory Device based on Small Molecules.
    Zhang QJ; He JH; Zhuang H; Li H; Li NJ; Xu QF; Chen DY; Lu JM
    Chem Asian J; 2016 May; 11(10):1624-30. PubMed ID: 27061009
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Co nanoparticles induced resistive switching and magnetism for the electrochemically deposited polypyrrole composite films.
    Xu Z; Gao M; Yu L; Lu L; Xu X; Jiang Y
    ACS Appl Mater Interfaces; 2014 Oct; 6(20):17823-30. PubMed ID: 25245009
    [TBL] [Abstract][Full Text] [Related]  

  • 17. The mechanism underlying silicon oxide based resistive random-access memory (ReRAM).
    Chen YL; Ho MS; Lee WJ; Chung PF; Balraj B; Sivakumar C
    Nanotechnology; 2020 Apr; 31(14):145709. PubMed ID: 31846950
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The current limit and self-rectification functionalities in the TiO
    Yoon JH; Kwon DE; Kim Y; Kwon YJ; Yoon KJ; Park TH; Shao XL; Hwang CS
    Nanoscale; 2017 Aug; 9(33):11920-11928. PubMed ID: 28786468
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Size-dependent resistive switching properties of the active region in nickel nitride-based crossbar array resistive random access memory.
    Kim HD; Yun MJ; Hong SM; Kim TG
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9088-91. PubMed ID: 25971015
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory.
    Kim J; Ohtsu H; Den T; Deekamwong K; Muneta I; Kawano M
    Chem Sci; 2019 Dec; 10(47):10888-10893. PubMed ID: 32190244
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.