149 related articles for article (PubMed ID: 36134129)
21. Flexible Molybdenum Disulfide (MoS
Singh E; Singh P; Kim KS; Yeom GY; Nalwa HS
ACS Appl Mater Interfaces; 2019 Mar; 11(12):11061-11105. PubMed ID: 30830744
[TBL] [Abstract][Full Text] [Related]
22. Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS
Gao Q; Zhang C; Liu P; Hu Y; Yang K; Yi Z; Liu L; Pan X; Zhang Z; Yang J; Chi F
Nanomaterials (Basel); 2021 Jun; 11(6):. PubMed ID: 34204492
[TBL] [Abstract][Full Text] [Related]
23. Exceptionally Uniform and Scalable Multilayer MoS
Park H; Liu N; Kim BH; Kwon SH; Baek S; Kim S; Lee HK; Yoon YJ; Kim S
ACS Appl Mater Interfaces; 2020 May; 12(18):20645-20652. PubMed ID: 32281367
[TBL] [Abstract][Full Text] [Related]
24. Electron beam lithography for direct patterning of MoS
Jumbert G; Placidi M; Alzina F; Sotomayor Torres CM; Sledzinska M
RSC Adv; 2021 May; 11(32):19908-19913. PubMed ID: 35479206
[TBL] [Abstract][Full Text] [Related]
25. Real-time effect of electron beam on MoS
Lee K; Lee H; Kim Y; Choi J; Ahn JP; Shin DH; Cho YH; Jang HK; Lee SW; Shin J; Ji H; Kim GT
Nanotechnology; 2020 Nov; 31(45):455202. PubMed ID: 32325431
[TBL] [Abstract][Full Text] [Related]
26. Low-Voltage and High-Performance Multilayer MoS
Singh AK; Hwang C; Eom J
ACS Appl Mater Interfaces; 2016 Dec; 8(50):34699-34705. PubMed ID: 27998114
[TBL] [Abstract][Full Text] [Related]
27. Rubbing-Induced Site-Selective Growth of MoS
Ryu B; Li D; Park C; Rokni H; Lu W; Liang X
ACS Appl Mater Interfaces; 2018 Dec; 10(50):43774-43784. PubMed ID: 30484317
[TBL] [Abstract][Full Text] [Related]
28. Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics.
Wang L; Guo Z; Lan Q; Song W; Zhong Z; Yang K; Zhao T; Huang H; Zhang C; Shi W
Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004982
[TBL] [Abstract][Full Text] [Related]
29. Graphene-Molybdenum Disulfide-Graphene Tunneling Junctions with Large-Area Synthesized Materials.
Joiner CA; Campbell PM; Tarasov AA; Beatty BR; Perini CJ; Tsai MY; Ready WJ; Vogel EM
ACS Appl Mater Interfaces; 2016 Apr; 8(13):8702-9. PubMed ID: 26987383
[TBL] [Abstract][Full Text] [Related]
30. Toward barrier free contact to molybdenum disulfide using graphene electrodes.
Liu Y; Wu H; Cheng HC; Yang S; Zhu E; He Q; Ding M; Li D; Guo J; Weiss NO; Huang Y; Duan X
Nano Lett; 2015 May; 15(5):3030-4. PubMed ID: 25879371
[TBL] [Abstract][Full Text] [Related]
31. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS
Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH
Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825
[TBL] [Abstract][Full Text] [Related]
32. Wafer-Scale Integration of Highly Uniform and Scalable MoS
Kim Y; Kim AR; Zhao G; Choi SY; Kang SC; Lim SK; Lee KE; Park J; Lee BH; Hahm MG; Kim DH; Yun J; Lee KH; Cho B
ACS Appl Mater Interfaces; 2017 Oct; 9(42):37146-37153. PubMed ID: 28976735
[TBL] [Abstract][Full Text] [Related]
33. Impacts of interface contaminations on the MoS
Huang K; Zhao M; Liu X; Xia Q; Liu H
Nanotechnology; 2019 Sep; 30(36):365301. PubMed ID: 31096200
[TBL] [Abstract][Full Text] [Related]
34. Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.
Gu W; Shen J; Ma X
Nanoscale Res Lett; 2014 Feb; 9(1):100. PubMed ID: 24576344
[TBL] [Abstract][Full Text] [Related]
35. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.
Lee GH; Yu YJ; Cui X; Petrone N; Lee CH; Choi MS; Lee DY; Lee C; Yoo WJ; Watanabe K; Taniguchi T; Nuckolls C; Kim P; Hone J
ACS Nano; 2013 Sep; 7(9):7931-6. PubMed ID: 23924287
[TBL] [Abstract][Full Text] [Related]
36. MoS2 transistors fabricated via plasma-assisted nanoprinting of few-layer MoS2 flakes into large-area arrays.
Nam H; Wi S; Rokni H; Chen M; Priessnitz G; Lu W; Liang X
ACS Nano; 2013 Jul; 7(7):5870-81. PubMed ID: 23790007
[TBL] [Abstract][Full Text] [Related]
37. Short channel monolayer MoS
Bi K; Liu H; Chen Y; Luo F; Shu Z; Lin J; Liu S; Liu H; Zeng Z; Dai P; Zhu M; Duan H
Nanotechnology; 2019 Jul; 30(29):295301. PubMed ID: 30917350
[TBL] [Abstract][Full Text] [Related]
38. Immunity to Contact Scaling in MoS
Cheng Z; Yu Y; Singh S; Price K; Noyce SG; Lin YC; Cao L; Franklin AD
Nano Lett; 2019 Aug; 19(8):5077-5085. PubMed ID: 31283241
[TBL] [Abstract][Full Text] [Related]
39. Electron beam lithography on nonplanar and irregular surfaces.
Zhu C; Ekinci H; Pan A; Cui B; Zhu X
Microsyst Nanoeng; 2024; 10():52. PubMed ID: 38646064
[TBL] [Abstract][Full Text] [Related]
40. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.
Cheng R; Jiang S; Chen Y; Liu Y; Weiss N; Cheng HC; Wu H; Huang Y; Duan X
Nat Commun; 2014 Oct; 5():5143. PubMed ID: 25295573
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
