These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

315 related articles for article (PubMed ID: 36164762)

  • 1. Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware.
    Kim M; Rehman MA; Lee D; Wang Y; Lim DH; Khan MF; Choi H; Shao QY; Suh J; Lee HS; Park HH
    ACS Appl Mater Interfaces; 2022 Oct; 14(39):44561-44571. PubMed ID: 36164762
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Improved analog switching characteristics of Ta
    Lee TS; Choi C
    Nanotechnology; 2022 Mar; 33(24):. PubMed ID: 35226891
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Study on the Sodium-Doped Titania Interface-Type Memristor.
    Kim M; Lee S; Kim SJ; Lim BM; Kang BS; Lee HS
    ACS Appl Mater Interfaces; 2024 Apr; 16(13):16453-16461. PubMed ID: 38516695
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Full-Inorganic Flexible Ag
    Zhu Y; Liang JS; Shi X; Zhang Z
    ACS Appl Mater Interfaces; 2022 Sep; 14(38):43482-43489. PubMed ID: 36102604
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Statistical Analysis of Uniform Switching Characteristics of Ta
    Jin S; Kwon JD; Kim Y
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771802
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Controllable digital and analog resistive switching behavior of 2D layered WSe
    Cheng S; Zhong L; Yin J; Duan H; Xie Q; Luo W; Jie W
    Nanoscale; 2023 Mar; 15(10):4801-4808. PubMed ID: 36779310
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High-Reliability and Self-Rectifying Alkali Ion Memristor through Bottom Electrode Design and Dopant Incorporation.
    Lim BM; Lee YM; Yoo CS; Kim M; Kim SJ; Kim S; Yang JJ; Lee HS
    ACS Nano; 2024 Feb; 18(8):6373-6386. PubMed ID: 38349619
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Linear and Symmetric Li-Based Composite Memristors for Efficient Supervised Learning.
    Kim SM; Kim S; Ling L; Liu SE; Jin S; Jung YM; Kim M; Park HH; Sangwan VK; Hersam MC; Lee HS
    ACS Appl Mater Interfaces; 2022 Feb; 14(4):5673-5681. PubMed ID: 35043617
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing.
    Wang R; Shi T; Zhang X; Wang W; Wei J; Lu J; Zhao X; Wu Z; Cao R; Long S; Liu Q; Liu M
    Materials (Basel); 2018 Oct; 11(11):. PubMed ID: 30373122
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Milk-Ta
    Min JG; Park H; Cho WJ
    Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080015
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Resistive switching modulation by incorporating thermally enhanced layer in HfO
    Li X; Feng Z; Zou J; Wu Z; Xu Z; Yang F; Zhu Y; Dai Y
    Nanotechnology; 2023 Nov; 35(3):. PubMed ID: 37852218
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Implementation of Highly Stable Memristive Characteristics in an Organic-Inorganic Hybrid Resistive Switching Layer of Chitosan-Titanium Oxide with Microwave-Assisted Oxidation.
    Lee DH; Park H; Cho WJ
    Molecules; 2023 Jul; 28(13):. PubMed ID: 37446836
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Pseudo-Interface Switching of a Two-Terminal TaO
    Ryu H; Kim S
    Nanomaterials (Basel); 2020 Aug; 10(8):. PubMed ID: 32784590
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Artificial Synapse Based on a δ-FAPbI
    Lee SU; Kim SY; Lee JH; Baek JH; Lee JW; Jang HW; Park NG
    Nano Lett; 2024 Apr; ():. PubMed ID: 38619226
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Neuromorphic crossbar circuit with nanoscale filamentary-switching binary memristors for speech recognition.
    Truong SN; Ham SJ; Min KS
    Nanoscale Res Lett; 2014; 9(1):629. PubMed ID: 25489283
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics.
    Choi HW; Song KW; Kim SH; Nguyen KT; Eadi SB; Kwon HM; Lee HD
    Sci Rep; 2022 Jan; 12(1):1259. PubMed ID: 35075173
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Tunable Resistive Switching in 2D MXene Ti
    Zhang X; Chen H; Cheng S; Guo F; Jie W; Hao J
    ACS Appl Mater Interfaces; 2022 Oct; 14(39):44614-44621. PubMed ID: 36136123
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks.
    Kim H; Lee J; Kim HW; Woo J; Kim MH; Lee SH
    ACS Appl Mater Interfaces; 2023 Oct; ():. PubMed ID: 37874750
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Recent Advances in Cerium Oxide-Based Memristors for Neuromorphic Computing.
    Ali S; Ullah MA; Raza A; Iqbal MW; Khan MF; Rasheed M; Ismail M; Kim S
    Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686950
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Tuning resistive switching characteristics of tantalum oxide memristors through Si doping.
    Kim S; Choi S; Lee J; Lu WD
    ACS Nano; 2014 Oct; 8(10):10262-9. PubMed ID: 25255038
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 16.