199 related articles for article (PubMed ID: 36251772)
21. Nontrivial role of polar optical phonons in limiting electron mobility of two-dimensional Ga
Duan X; Wang T; Fu Z; Liu L; Yang JY
Phys Chem Chem Phys; 2023 Apr; 25(14):10175-10183. PubMed ID: 36976635
[TBL] [Abstract][Full Text] [Related]
22. Improving performance of monolayer arsenene tunnel field-effect transistors by defects.
Song S; Gong J; Wen H; Yang S
Nanoscale Adv; 2022 Jul; 4(14):3023-3032. PubMed ID: 36133511
[TBL] [Abstract][Full Text] [Related]
23. Sub-5 nm Ultrathin In
Xu L; Xu L; Lan J; Li Y; Li Q; Wang A; Guo Y; Ang YS; Quhe R; Lu J
ACS Appl Mater Interfaces; 2024 Apr; ():. PubMed ID: 38676632
[TBL] [Abstract][Full Text] [Related]
24. Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga
Yuvaraja S; Khandelwal V; Krishna S; Lu Y; Liu Z; Kumar M; Tang X; Maciel García GI; Chettri D; Liao CH; Li X
ACS Appl Mater Interfaces; 2024 Feb; 16(5):6088-6097. PubMed ID: 38278516
[TBL] [Abstract][Full Text] [Related]
25. Many-Body Effect and Device Performance Limit of Monolayer InSe.
Wang Y; Fei R; Quhe R; Li J; Zhang H; Zhang X; Shi B; Xiao L; Song Z; Yang J; Shi J; Pan F; Lu J
ACS Appl Mater Interfaces; 2018 Jul; 10(27):23344-23352. PubMed ID: 29916240
[TBL] [Abstract][Full Text] [Related]
26. Sub-5 nm monolayer black phosphorene tunneling transistors.
Li H; Shi B; Pan Y; Li J; Xu L; Xu L; Zhang Z; Pan F; Lu J
Nanotechnology; 2018 Nov; 29(48):485202. PubMed ID: 30207546
[TBL] [Abstract][Full Text] [Related]
27. Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga
Sa B; Shen X; Cai S; Cui Z; Xiong R; Xu C; Wen C; Wu B
Phys Chem Chem Phys; 2022 Jun; 24(25):15376-15388. PubMed ID: 35703557
[TBL] [Abstract][Full Text] [Related]
28. High-performance monolayer Na
Zhou W; Zhang S; Guo S; Qu H; Cai B; Chen X; Zeng H
Nanoscale; 2020 Sep; 12(36):18931-18937. PubMed ID: 32910132
[TBL] [Abstract][Full Text] [Related]
29. Performance Limit of Ultrathin GaAs Transistors.
Li Q; Fang S; Liu S; Xu L; Xu L; Yang C; Yang J; Shi B; Ma J; Yang J; Quhe R; Lu J
ACS Appl Mater Interfaces; 2022 May; ():. PubMed ID: 35575689
[TBL] [Abstract][Full Text] [Related]
30. High-Performance and Low-Power
Guo X; Hu X; Zhang S; Yang J; Chen C; Zhang J; Qu H; Zhang S; Zhou W
ACS Appl Mater Interfaces; 2023 Nov; 15(46):53644-53650. PubMed ID: 37936317
[TBL] [Abstract][Full Text] [Related]
31. Tunable Properties of Novel Ga
Liao Y; Zhang Z; Gao Z; Qian Q; Hua M
ACS Appl Mater Interfaces; 2020 Jul; 12(27):30659-30669. PubMed ID: 32519544
[TBL] [Abstract][Full Text] [Related]
32. The device performance limit of in-plane monolayer VTe
Tan X; Li Q; Ren D; Fu HH
Nanoscale; 2023 Dec; 15(48):19726-19734. PubMed ID: 38047474
[TBL] [Abstract][Full Text] [Related]
33. 2D Amorphous GaO
Moon S; Lee D; Park J; Kim J
ACS Appl Mater Interfaces; 2023 Aug; 15(31):37687-37695. PubMed ID: 37498125
[TBL] [Abstract][Full Text] [Related]
34. Size-Dependent Phase Transition in Ultrathin Ga
Wang J; Guan X; Zheng H; Zhao L; Jiang R; Zhao P; Zhang Y; Hu J; Li P; Jia S; Wang J
Nano Lett; 2023 Aug; 23(16):7364-7370. PubMed ID: 37530420
[TBL] [Abstract][Full Text] [Related]
35. Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga
Kim J; Kim J
ACS Appl Mater Interfaces; 2020 Feb; 12(6):7310-7316. PubMed ID: 31898449
[TBL] [Abstract][Full Text] [Related]
36. Quantum transport of sub-5 nm InSe and In
Guo H; Yin Y; Yu W; Robertson J; Liu S; Zhang Z; Guo Y
Nanoscale; 2023 Feb; 15(7):3496-3503. PubMed ID: 36723054
[TBL] [Abstract][Full Text] [Related]
37. The interfacial properties of 2D metal-monolayer blue phosphorene heterojunctions and transport properties of their field-effect transistors.
Chen W; Lin X; Xu G; Zhong K; Zhang JM; Huang Z
J Phys Condens Matter; 2023 Dec; 36(12):. PubMed ID: 38056009
[TBL] [Abstract][Full Text] [Related]
38. Doping-Free Arsenene Heterostructure Metal-Oxide-Semiconductor Field Effect Transistors Enabled by Thickness Modulated Semiconductor to Metal Transition in Arsenene.
Seo D; Chang J
Sci Rep; 2019 Mar; 9(1):3988. PubMed ID: 30850758
[TBL] [Abstract][Full Text] [Related]
39. Phonon mode contributions to thermal conductivity of pristine and defective β-Ga
Yan Z; Kumar S
Phys Chem Chem Phys; 2018 Nov; 20(46):29236-29242. PubMed ID: 30427340
[TBL] [Abstract][Full Text] [Related]
40. High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond.
Liao M; Sun H; Koizumi S
Adv Sci (Weinh); 2024 Apr; 11(13):e2306013. PubMed ID: 38243629
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
