These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

164 related articles for article (PubMed ID: 36335202)

  • 1. Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation.
    Kato M; Watanabe O; Mii T; Sakane H; Harada S
    Sci Rep; 2022 Nov; 12(1):18790. PubMed ID: 36335202
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation.
    Harada S; Mii T; Sakane H; Kato M
    Sci Rep; 2022 Aug; 12(1):13542. PubMed ID: 35970877
    [TBL] [Abstract][Full Text] [Related]  

  • 3. An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures.
    Qian J; Shi L; Jin M; Bhattacharya M; Shimbori A; Yu H; Houshmand S; White MH; Agarwal AK
    Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398907
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes.
    Min SJ; Schweitz MA; Nguyen NT; Koo SM
    J Nanosci Nanotechnol; 2021 Mar; 21(3):2001-2004. PubMed ID: 33404483
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC.
    Jiang S; Li Y; Zhang Y; Chen C; Chen Z; Zhu W; He H; Wang X
    RSC Adv; 2024 Aug; 14(38):27778-27788. PubMed ID: 39224629
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance.
    Liu Y; Yang R; Wang Y; Zhang Z; Deng X
    Materials (Basel); 2019 Dec; 12(24):. PubMed ID: 31842506
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Surface defects generated by intrinsic origins on 4H-SiC epitaxial wafers observed by scanning electron microscopy.
    Matsuhata H; Sugiyama N; Chen B; Yamashita T; Hatakeyama T; Sekiguchi T
    Microscopy (Oxf); 2017 Apr; 66(2):95-102. PubMed ID: 27940608
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions.
    Li J; Meng C; Yu L; Li Y; Yan F; Han P; Ji X
    Micromachines (Basel); 2020 Jun; 11(6):. PubMed ID: 32599702
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics.
    Xu X; Zhang L; Dong P; Li Z; Li L; Li J; Zhang J
    Nanoscale Res Lett; 2021 Sep; 16(1):141. PubMed ID: 34508306
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices.
    Mandal KC; Kleppinger JW; Chaudhuri SK
    Micromachines (Basel); 2020 Feb; 11(3):. PubMed ID: 32121162
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation.
    Wang H; Gao S; Kang R; Guo X; Li H
    Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889713
    [TBL] [Abstract][Full Text] [Related]  

  • 12. High-voltage SiC power devices for improved energy efficiency.
    Kimoto T
    Proc Jpn Acad Ser B Phys Biol Sci; 2022; 98(4):161-189. PubMed ID: 35400694
    [TBL] [Abstract][Full Text] [Related]  

  • 13. [The study of nondestructive defect characterization of SiC by cathodoluminescence].
    Miao RX; Zhang YM; Tang XY; Zhang YM
    Guang Pu Xue Yu Guang Pu Fen Xi; 2010 Mar; 30(3):702-5. PubMed ID: 20496691
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC.
    Steiner J; Roder M; Nguyen BD; Sandfeld S; Danilewsky A; Wellmann PJ
    Materials (Basel); 2019 Jul; 12(13):. PubMed ID: 31323918
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Carrier lifetime modulation on current capability of SiC PiN diodes in a pulsed system.
    Xu X; Zhang L; Li L; Li Z; Li J; Zhang J; Dong P
    Discov Nano; 2023 Oct; 18(1):128. PubMed ID: 37845558
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.
    Li F; Roccaforte F; Greco G; Fiorenza P; La Via F; Pérez-Tomas A; Evans JE; Fisher CA; Monaghan FA; Mawby PA; Jennings M
    Materials (Basel); 2021 Oct; 14(19):. PubMed ID: 34640228
    [TBL] [Abstract][Full Text] [Related]  

  • 17. High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications.
    Mandal KC; Chaudhuri SK; Nag R
    Micromachines (Basel); 2023 Jul; 14(8):. PubMed ID: 37630068
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Ga
    Song Y; Shoemaker D; Leach JH; McGray C; Huang HL; Bhattacharyya A; Zhang Y; Gonzalez-Valle CU; Hess T; Zhukovsky S; Ferri K; Lavelle RM; Perez C; Snyder DW; Maria JP; Ramos-Alvarado B; Wang X; Krishnamoorthy S; Hwang J; Foley BM; Choi S
    ACS Appl Mater Interfaces; 2021 Sep; 13(34):40817-40829. PubMed ID: 34470105
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications.
    Meli A; Muoio A; Trotta A; Meda L; Parisi M; La Via F
    Materials (Basel); 2021 Feb; 14(4):. PubMed ID: 33669492
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers.
    Pei Y; Yuan W; Li Y; Guo N; Zhang X; Liu X
    Micromachines (Basel); 2024 May; 15(6):. PubMed ID: 38930635
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.