These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

118 related articles for article (PubMed ID: 36363066)

  • 1. Low-Frequency Noise Characteristics in HfO
    Im KS; Shin S; Jang CH; Cha HY
    Materials (Basel); 2022 Oct; 15(21):. PubMed ID: 36363066
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO
    Jang CH; Kim HS; Kim H; Cha HY
    Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329549
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO
    Chang TY; Wang KC; Liu HY; Hseun JH; Peng WC; Ronchi N; Celano U; Banerjee K; Van Houdt J; Wu TL
    Nanomaterials (Basel); 2023 Jul; 13(14):. PubMed ID: 37513115
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO
    Choi Y; Han C; Shin J; Moon S; Min J; Park H; Eom D; Lee J; Shin C
    Sensors (Basel); 2022 May; 22(11):. PubMed ID: 35684705
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement.
    Kim H; Park J; Kim J; Lee N; Lee G; Kim S; Choi P; Beak D; Song J; Choi B
    J Nanosci Nanotechnol; 2021 Mar; 21(3):1966-1970. PubMed ID: 33404477
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Experimental study of endurance characteristics of Al-doped HfO
    Choi Y; Shin J; Moon S; Min J; Han C; Shin C
    Nanotechnology; 2023 Feb; 34(18):. PubMed ID: 36724507
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Dielectric Properties Investigation of Metal-Insulator-Metal (MIM) Capacitors.
    Xiong L; Hu J; Yang Z; Li X; Zhang H; Zhang G
    Molecules; 2022 Jun; 27(12):. PubMed ID: 35745073
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Impact of oxide gate electrode for ferroelectric field-effect transistors with metal-ferroelectric-metal-insulator-semiconductor gate stack using undoped HfO
    Choi SN; Moon SE; Yoon SM
    Nanotechnology; 2021 Feb; 32(8):085709. PubMed ID: 33176285
    [TBL] [Abstract][Full Text] [Related]  

  • 9. HfO
    Kang M; Peng Y; Xiao W; Zhang Y; Wang Z; Du P; Jiang H; Liu F; Liu Y; Hao Y; Han G
    ACS Appl Mater Interfaces; 2024 Jan; 16(2):2954-2963. PubMed ID: 38166401
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Fluid Imprint and Inertial Switching in Ferroelectric La:HfO
    Buragohain P; Erickson A; Kariuki P; Mittmann T; Richter C; Lomenzo PD; Lu H; Schenk T; Mikolajick T; Schroeder U; Gruverman A
    ACS Appl Mater Interfaces; 2019 Sep; 11(38):35115-35121. PubMed ID: 31460741
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Mesoscopic-scale grain formation in HfO
    Kobayashi M; Wu J; Sawabe Y; Takuya S; Hiramoto T
    Nano Converg; 2022 Nov; 9(1):50. PubMed ID: 36370230
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO
    Dai S; Yang Q; Zeng B; Zheng S; Zhong X; Xiang J; Gao J; Zhao J; Liao J; Liao M; Zhou Y
    ACS Appl Mater Interfaces; 2022 Nov; 14(45):51459-51467. PubMed ID: 36318591
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Effect of Heat Budget After Capacitor Formation on the Leakage Current Characteristics of ZrO₂-Based High-
    Lee JM; Choi PH; Seo JB; Choi BD
    J Nanosci Nanotechnol; 2020 Jan; 20(1):367-372. PubMed ID: 31383180
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf
    Matveyev Y; Mikheev V; Negrov D; Zarubin S; Kumar A; Grimley ED; LeBeau JM; Gloskovskii A; Tsymbal EY; Zenkevich A
    Nanoscale; 2019 Nov; 11(42):19814-19822. PubMed ID: 31624822
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy.
    Collins L; Celano U
    ACS Appl Mater Interfaces; 2020 Sep; 12(37):41659-41665. PubMed ID: 32870659
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO
    Yoon SJ; Moon SE; Yoon SM
    Nanoscale; 2020 Jul; 12(25):13421-13430. PubMed ID: 32614009
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Improved remnant polarization of Zr-doped HfO
    Choi Y; Park H; Han C; Min J; Shin C
    Sci Rep; 2022 Oct; 12(1):16750. PubMed ID: 36202954
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO
    Ku B; Ma Y; Han H; Xuan W; Choi C
    Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35767964
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Improved Ferroelectric Properties in Hf
    Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M
    Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Epitaxial Integration on Si(001) of Ferroelectric Hf
    Lyu J; Fina I; Fontcuberta J; Sánchez F
    ACS Appl Mater Interfaces; 2019 Feb; 11(6):6224-6229. PubMed ID: 30657323
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.