These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

141 related articles for article (PubMed ID: 36364421)

  • 1. Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer.
    Lai MJ; Chang YT; Wang SC; Huang SF; Liu RS; Zhang X; Chen LC; Lin RM
    Molecules; 2022 Nov; 27(21):. PubMed ID: 36364421
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.
    Zhang ZH; Huang Chen SW; Chu C; Tian K; Fang M; Zhang Y; Bi W; Kuo HC
    Nanoscale Res Lett; 2018 Apr; 13(1):122. PubMed ID: 29693213
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Suppressing the efficiency droop in the AlGaN-based UVB LED.
    Muhammad U; Malik S; Khan MA; Hirayama H
    Nanotechnology; 2021 Feb; ():. PubMed ID: 33567413
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Suppressing the efficiency droop in AlGaN-based UVB LEDs.
    Usman M; Malik S; Khan MA; Hirayama H
    Nanotechnology; 2021 Mar; 32(21):215703. PubMed ID: 33657018
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
    Lin BC; Chen KJ; Wang CH; Chiu CH; Lan YP; Lin CC; Lee PT; Shih MH; Kuo YK; Kuo HC
    Opt Express; 2014 Jan; 22(1):463-9. PubMed ID: 24515006
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance.
    Khan MA; Maeda N; Yun J; Jo M; Yamada Y; Hirayama H
    Sci Rep; 2022 Feb; 12(1):2591. PubMed ID: 35173171
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells.
    Lu H; Yu T; Yuan G; Chen X; Chen Z; Chen G; Zhang G
    Opt Lett; 2012 Sep; 37(17):3693-5. PubMed ID: 22940993
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Investigation on external quantum efficiency droops and inactivation efficiencies of AlGaN-based ultraviolet-c LEDs at 265-285 nm.
    Guo Z; Li Z; Lai S; Hou X; Fan X; Zhong C; Lin Y; Chen G; Qin G; Gao T; Fu N; Shi Y; Liao X; Lin Y; Lu Y; Guo W; Chen Z
    Nanotechnology; 2023 Jun; 34(33):. PubMed ID: 37192605
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage.
    Xing Z; Zhou Y; Zhang A; Qu Y; Wang F; Liou JJ; Liu Y
    Opt Express; 2024 Mar; 32(6):10284-10294. PubMed ID: 38571244
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Reduced efficiency droop in blue InGaN light-emitting diodes by thin AlGaN barriers.
    Chang JY; Chang YA; Wang TH; Chen FM; Liou BT; Kuo YK
    Opt Lett; 2014 Feb; 39(3):497-500. PubMed ID: 24487849
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer.
    Lang J; Xu FJ; Ge WK; Liu BY; Zhang N; Sun YH; Wang JM; Wang MX; Xie N; Fang XZ; Kang XN; Qin ZX; Yang XL; Wang XQ; Shen B
    Opt Express; 2019 Sep; 27(20):A1458-A1466. PubMed ID: 31684498
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.
    Nguyen HP; Cui K; Zhang S; Djavid M; Korinek A; Botton GA; Mi Z
    Nano Lett; 2012 Mar; 12(3):1317-23. PubMed ID: 22283508
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures.
    Tan S; Zhang J; Egawa T; Chen G; Luo X; Sun L; Zhu Y
    Nanoscale Res Lett; 2018 Oct; 13(1):334. PubMed ID: 30353235
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Strain Compensation and Trade-Off Design Result in Exciton Emission at 306 nm from AlGaN LEDs at Temperatures up to 368 K.
    Huang SM; Lai MJ; Liu RS; Liu TY; Lin RM
    Materials (Basel); 2021 Nov; 14(21):. PubMed ID: 34772224
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
    Che J; Shao H; Kou J; Tian K; Chu C; Hou X; Zhang Y; Sun Q; Zhang ZH
    Nanoscale Res Lett; 2019 Aug; 14(1):268. PubMed ID: 31388778
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN.
    Zhao Y; Deng G; Niu Y; Wang Y; Zhang L; Yu J; Ma H; Chen X; Shi Z; Zhang B; Zhang Y
    Opt Lett; 2022 Jan; 47(2):385-388. PubMed ID: 35030622
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells.
    Barrett RM; McMahon JM; Ahumada-Lazo R; Alanis JA; Parkinson P; Schulz S; Kappers MJ; Oliver RA; Binks D
    ACS Photonics; 2023 Aug; 10(8):2632-2640. PubMed ID: 37602288
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Droop-Free Colloidal Quantum Dot Light-Emitting Diodes.
    Lim J; Park YS; Wu K; Yun HJ; Klimov VI
    Nano Lett; 2018 Oct; 18(10):6645-6653. PubMed ID: 30198267
    [TBL] [Abstract][Full Text] [Related]  

  • 19. High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
    Jain B; Velpula RT; Thang Bui HQ; Nguyen HD; Lenka TR; Nguyen TK; Nguyen HPT
    Opt Express; 2020 Jan; 28(1):665-675. PubMed ID: 32118989
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers.
    Zhang YY; Fan GH; Yin YA; Yao GR
    Opt Express; 2012 Jan; 20(1):A133-40. PubMed ID: 22379673
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.