These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

134 related articles for article (PubMed ID: 36364596)

  • 1. Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS
    Shin DH; You YG; Jo SI; Jeong GH; Campbell EEB; Chung HJ; Jhang SH
    Nanomaterials (Basel); 2022 Oct; 12(21):. PubMed ID: 36364596
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor.
    Mills EM; Min BK; Kim SK; Kim SJ; Kang MA; Song W; Myung S; Lim J; An KS; Jung J; Kim S
    ACS Appl Mater Interfaces; 2015 Aug; 7(33):18300-5. PubMed ID: 26192754
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Low-power-consumption CMOS inverter array based on CVD-grown
    Du W; Jia X; Cheng Z; Xu W; Li Y; Dai L
    iScience; 2021 Dec; 24(12):103491. PubMed ID: 34917894
    [TBL] [Abstract][Full Text] [Related]  

  • 4. An All-Solution-Based Hybrid CMOS-Like Quantum Dot/Carbon Nanotube Inverter.
    Shulga AG; Derenskyi V; Salazar-Rios JM; Dirin DN; Fritsch M; Kovalenko MV; Scherf U; Loi MA
    Adv Mater; 2017 Sep; 29(35):. PubMed ID: 28714202
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Mechanically Flexible and High-Performance CMOS Logic Circuits.
    Honda W; Arie T; Akita S; Takei K
    Sci Rep; 2015 Oct; 5():15099. PubMed ID: 26459882
    [TBL] [Abstract][Full Text] [Related]  

  • 6. A graphene barristor using nitrogen profile controlled ZnO Schottky contacts.
    Hwang HJ; Chang KE; Yoo WB; Shim CH; Lee SK; Yang JH; Kim SY; Lee Y; Cho C; Lee BH
    Nanoscale; 2017 Feb; 9(7):2442-2448. PubMed ID: 28165105
    [TBL] [Abstract][Full Text] [Related]  

  • 7. A molybdenum disulfide/carbon nanotube heterogeneous complementary inverter.
    Huang J; Somu S; Busnaina A
    Nanotechnology; 2012 Aug; 23(33):335203. PubMed ID: 22865612
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.
    Van NH; Lee JH; Whang D; Kang DJ
    Nanoscale; 2016 Jun; 8(23):12022-8. PubMed ID: 27240692
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Scaling carbon nanotube complementary transistors to 5-nm gate lengths.
    Qiu C; Zhang Z; Xiao M; Yang Y; Zhong D; Peng LM
    Science; 2017 Jan; 355(6322):271-276. PubMed ID: 28104886
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits.
    Jeon PJ; Kim JS; Lim JY; Cho Y; Pezeshki A; Lee HS; Yu S; Min SW; Im S
    ACS Appl Mater Interfaces; 2015 Oct; 7(40):22333-40. PubMed ID: 26399664
    [TBL] [Abstract][Full Text] [Related]  

  • 11. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.
    Cho AJ; Park KC; Kwon JY
    Nanoscale Res Lett; 2015; 10():115. PubMed ID: 25852410
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Directly drawn top-gate semiconducting carbon nanotube thin-film transistors and complementary inverters.
    Park J; Lee Y; Choi B; Yoon J; Kim Y; Kim HJ; Kang MH; Kim DH; Kim DM; Choi SJ
    Nanotechnology; 2020 Aug; 31(32):32LT01. PubMed ID: 32320962
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors.
    Lee SY; Lee SW; Kim SM; Yu WJ; Jo YW; Lee YH
    ACS Nano; 2011 Mar; 5(3):2369-75. PubMed ID: 21370895
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Reconfigurable Two-Dimensional Air-Gap Barristors.
    Zhang G; Lu G; Li X; Mei Z; Liang L; Fan S; Li Q; Wei Y
    ACS Nano; 2023 Mar; 17(5):4564-4573. PubMed ID: 36847653
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Electrically or chemically tunable photodetector with ultra high responsivity using graphene/InN nanowire based mixed dimensional barristors.
    Jahangir I; Uddin MA; Franken A; Singh AK; Koley G
    Nanotechnology; 2021 Sep; 32(47):. PubMed ID: 34293722
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Graphene barristor, a triode device with a gate-controlled Schottky barrier.
    Yang H; Heo J; Park S; Song HJ; Seo DH; Byun KE; Kim P; Yoo I; Chung HJ; Kim K
    Science; 2012 Jun; 336(6085):1140-3. PubMed ID: 22604723
    [TBL] [Abstract][Full Text] [Related]  

  • 17. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.
    Van NH; Lee JH; Sohn JI; Cha SN; Whang D; Kim JM; Kang DJ
    Nanoscale; 2014 May; 6(10):5479-83. PubMed ID: 24727896
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Shift of switching threshold in low-dimensional semiconductor-based complementary inverters via inkjet printing.
    Jung S; Lee J; Park J; Pak S; Lim J; Cha S; Kim B
    Nanotechnology; 2022 May; 33(30):. PubMed ID: 35428034
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices.
    Son M; Kim H; Jang J; Kim SY; Ki HC; Lee BH; Kim IS; Ham MH
    ACS Appl Mater Interfaces; 2019 Dec; 11(50):47247-47252. PubMed ID: 31746181
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.
    Das T; Chen X; Jang H; Oh IK; Kim H; Ahn JH
    Small; 2016 Nov; 12(41):5720-5727. PubMed ID: 27608439
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.