These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
158 related articles for article (PubMed ID: 36364668)
1. Silicon Wafer CMP Slurry Using a Hydrolysis Reaction Accelerator with an Amine Functional Group Remarkably Enhances Polishing Rate. Bae JY; Han MH; Lee SJ; Kim ES; Lee K; Lee GS; Park JH; Park JG Nanomaterials (Basel); 2022 Nov; 12(21):. PubMed ID: 36364668 [TBL] [Abstract][Full Text] [Related]
2. Polymer link breakage of polyimide-film-surface using hydrolysis reaction accelerator for enhancing chemical-mechanical-planarization polishing-rate. Jeong GP; Park JS; Lee SJ; Kim PS; Han MH; Hong SW; Kim ES; Park JH; Choo BK; Kang SB; Park JG Sci Rep; 2022 Mar; 12(1):3366. PubMed ID: 35233019 [TBL] [Abstract][Full Text] [Related]
3. Polymer Nanoparticles Applied in the CMP (Chemical Mechanical Polishing) Process of Chip Wafers for Defect Improvement and Polishing Removal Rate Response. Chiu WL; Huang CI Polymers (Basel); 2023 Jul; 15(15):. PubMed ID: 37571091 [TBL] [Abstract][Full Text] [Related]
4. Mechanism Exploration of the Effect of Polyamines on the Polishing Rate of Silicon Chemical Mechanical Polishing: A Study Combining Simulations and Experiments. Lin Z; Zhu J; Huang Q; Zhu L; Li W; Yu W Nanomaterials (Basel); 2024 Jan; 14(1):. PubMed ID: 38202582 [TBL] [Abstract][Full Text] [Related]
5. The Effects of Friction and Temperature in the Chemical-Mechanical Planarization Process. Ilie F; Minea IL; Cotici CD; Hristache AF Materials (Basel); 2023 Mar; 16(7):. PubMed ID: 37048844 [TBL] [Abstract][Full Text] [Related]
6. Surface Transformation of Spin-on-Carbon Film via Forming Carbon Iron Complex for Remarkably Enhanced Polishing Rate. Lee JM; Lee JC; Kim SI; Lee SJ; Bae JY; Park JH; Park JG Nanomaterials (Basel); 2022 Mar; 12(6):. PubMed ID: 35335782 [TBL] [Abstract][Full Text] [Related]
7. Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies. Hsieh CH; Chang CY; Hsiao YK; Chen CA; Tu CC; Kuo HC Micromachines (Basel); 2022 Oct; 13(10):. PubMed ID: 36296105 [TBL] [Abstract][Full Text] [Related]
8. Synthesis and performance of colloidal silica nano-abrasives with controllable size for chemical mechanical planarization. Zhang KL; Song ZT; Wang F; Wang LY; Feng SL J Nanosci Nanotechnol; 2009 Feb; 9(2):1054-7. PubMed ID: 19441454 [TBL] [Abstract][Full Text] [Related]
9. A novel atomic removal model for chemical mechanical polishing using developed mesoporous shell/core abrasives based on molecular dynamics. Liu Z; Zhang Z; Feng J; Yi X; Shi C; Gu Y; Zhao F; Liu S; Li J Nanoscale; 2023 Dec; 16(1):85-96. PubMed ID: 38050711 [TBL] [Abstract][Full Text] [Related]
10. Scavenger with Protonated Phosphite Ions for Incredible Nanoscale ZrO Kim SI; Jeong GP; Lee SJ; Lee JC; Lee JM; Park JH; Bae JY; Park JG Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947644 [TBL] [Abstract][Full Text] [Related]
11. Orthogonal Experimental Research on Dielectrophoresis Polishing (DEPP) of Silicon Wafer. Zhao T; Deng Q; Zhang C; Feng K; Zhou Z; Yuan J Micromachines (Basel); 2020 May; 11(6):. PubMed ID: 32471163 [TBL] [Abstract][Full Text] [Related]
12. Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted. Zhai K; He Q; Li L; Ren Y Ultrasonics; 2017 Sep; 80():9-14. PubMed ID: 28494230 [TBL] [Abstract][Full Text] [Related]
13. Green chemical mechanical polishing of sapphire wafers using a novel slurry. Xie W; Zhang Z; Liao L; Liu J; Su H; Wang S; Guo D Nanoscale; 2020 Nov; 12(44):22518-22526. PubMed ID: 32996521 [TBL] [Abstract][Full Text] [Related]
14. Atomic surface of quartz glass induced by photocatalytic green chemical mechanical polishing using the developed SiO Fan Y; Zhang Z; Yu J; Deng X; Shi C; Zhou H; Meng F; Feng J Nanoscale Adv; 2024 Feb; 6(5):1380-1391. PubMed ID: 38419872 [TBL] [Abstract][Full Text] [Related]
15. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina ( Gong J; Wang W; Liu W; Song Z Materials (Basel); 2024 Jan; 17(3):. PubMed ID: 38591510 [TBL] [Abstract][Full Text] [Related]
16. Role of interaction forces in controlling the stability and polishing performance of CMP slurries. Basim GB; Vakarelski IU; Moudgil BM J Colloid Interface Sci; 2003 Jul; 263(2):506-15. PubMed ID: 12909041 [TBL] [Abstract][Full Text] [Related]
17. Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing. Cui X; Zhang Z; Yu S; Chen X; Shi C; Zhou H; Meng F; Yu J; Wen W Nanoscale; 2023 Jun; 15(21):9304-9314. PubMed ID: 37171082 [TBL] [Abstract][Full Text] [Related]
18. Effect of slurry composition on the chemical mechanical polishing of thin diamond films. Werrell JM; Mandal S; Thomas ELH; Brousseau EB; Lewis R; Borri P; Davies PR; Williams OA Sci Technol Adv Mater; 2017; 18(1):654-663. PubMed ID: 29057022 [TBL] [Abstract][Full Text] [Related]
19. Super fine cerium hydroxide abrasives for SiO Son YH; Jeong GP; Kim PS; Han MH; Hong SW; Bae JY; Kim SI; Park JH; Park JG Sci Rep; 2021 Sep; 11(1):17736. PubMed ID: 34489499 [TBL] [Abstract][Full Text] [Related]
20. Characterization of wet pad surface in chemical mechanical polishing (CMP) process with full-field optical coherence tomography (FF-OCT). Choi WJ; Jung SP; Shin JG; Yang D; Lee BH Opt Express; 2011 Jul; 19(14):13343-50. PubMed ID: 21747489 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]