179 related articles for article (PubMed ID: 36399780)
1. Low-power multilevel resistive switching in
Velpula RT; Jain B; Nguyen HPT
Nanotechnology; 2022 Dec; 34(7):. PubMed ID: 36399780
[TBL] [Abstract][Full Text] [Related]
2. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO
Chen KH; Cheng CM; Wang NF; Kao MC
Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570498
[TBL] [Abstract][Full Text] [Related]
3. Bipolar Resistive Switching Characteristics of HfO
Zhang W; Kong JZ; Cao ZY; Li AD; Wang LG; Zhu L; Li X; Cao YQ; Wu D
Nanoscale Res Lett; 2017 Dec; 12(1):393. PubMed ID: 28599512
[TBL] [Abstract][Full Text] [Related]
4. Highly stable ITO/Zn
Chen SX; Chang SP; Hsieh WK; Chang SJ; Lin CC
RSC Adv; 2018 May; 8(32):17622-17628. PubMed ID: 35542070
[TBL] [Abstract][Full Text] [Related]
5. Low-Power Resistive Switching Characteristic in HfO
Ding X; Feng Y; Huang P; Liu L; Kang J
Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
[TBL] [Abstract][Full Text] [Related]
6. Multi-Level Resistive Al/Ga
Wang LW; Huang CW; Lee KJ; Chu SY; Wang YH
Nanomaterials (Basel); 2023 Jun; 13(12):. PubMed ID: 37368281
[TBL] [Abstract][Full Text] [Related]
7. Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.
Zahoor F; Azni Zulkifli TZ; Khanday FA
Nanoscale Res Lett; 2020 Apr; 15(1):90. PubMed ID: 32323059
[TBL] [Abstract][Full Text] [Related]
8. Compliance-free, analog RRAM devices based on SnO
Garlapati SK; Simanjuntak FM; Stathopoulos S; A SJ; Napari M; Prodromakis T
Sci Rep; 2024 Jun; 14(1):14163. PubMed ID: 38898073
[TBL] [Abstract][Full Text] [Related]
9. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.
Park SP; Tak YJ; Kim HJ; Lee JH; Yoo H; Kim HJ
Adv Mater; 2018 Jun; 30(26):e1800722. PubMed ID: 29761552
[TBL] [Abstract][Full Text] [Related]
10. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
Zhao X; Song P; Gai H; Li Y; Ai C; Wen D
Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957
[TBL] [Abstract][Full Text] [Related]
11. Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.
Mahata C; Ismail M; Kang M; Kim S
Nanoscale Res Lett; 2022 Jun; 17(1):58. PubMed ID: 35687194
[TBL] [Abstract][Full Text] [Related]
12. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
Lee KJ; Wang LW; Chiang TK; Wang YH
Materials (Basel); 2015 Oct; 8(10):7191-7198. PubMed ID: 28793630
[TBL] [Abstract][Full Text] [Related]
13. Sol-Gel-Processed Y
Lee T; Kim HI; Cho Y; Lee S; Lee WY; Bae JH; Kang IM; Kim K; Lee SH; Jang J
Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686940
[TBL] [Abstract][Full Text] [Related]
14. High performance and low power consumption resistive random access memory with Ag/Fe
Niu Y; Jiang K; Dong X; Zheng D; Liu B; Wang H
Nanotechnology; 2021 Oct; 32(50):. PubMed ID: 34525467
[TBL] [Abstract][Full Text] [Related]
15. Multi-Level Resistive Switching in SnSe/SrTiO
Ho TL; Ding K; Lyapunov N; Suen CH; Wong LW; Zhao J; Yang M; Zhou X; Dai JY
Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35807964
[TBL] [Abstract][Full Text] [Related]
16. Non-Volatile Memory and Synaptic Characteristics of TiN/CeO
Ha H; Pyo J; Lee Y; Kim S
Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556891
[TBL] [Abstract][Full Text] [Related]
17. Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device.
Shin HJ; Seo HK; Lee SY; Park M; Park SG; Yang MK
Materials (Basel); 2022 Mar; 15(7):. PubMed ID: 35407734
[TBL] [Abstract][Full Text] [Related]
18. Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.
Kim S; Park BG
Nanoscale Res Lett; 2016 Dec; 11(1):360. PubMed ID: 27518231
[TBL] [Abstract][Full Text] [Related]
19. The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories.
Rahaman SZ; Lin YD; Lee HY; Chen YS; Chen PS; Chen WS; Hsu CH; Tsai KH; Tsai MJ; Wang PH
Langmuir; 2017 May; 33(19):4654-4665. PubMed ID: 28420238
[TBL] [Abstract][Full Text] [Related]
20. Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO
Mahata C; Kang M; Kim S
Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33092042
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]