240 related articles for article (PubMed ID: 36422387)
1. Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study.
Lee JH; Choi JH; Kang WS; Kim D; Min BG; Kang DM; Choi JH; Kim HS
Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422387
[TBL] [Abstract][Full Text] [Related]
2. Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.
Kang WS; Choi JH; Kim D; Kim JH; Lee JH; Min BG; Kang DM; Choi JH; Kim HS
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258177
[TBL] [Abstract][Full Text] [Related]
3. Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect.
Kim HJ; Jang KW; Kim HS
J Nanosci Nanotechnol; 2019 Oct; 19(10):6016-6022. PubMed ID: 31026901
[TBL] [Abstract][Full Text] [Related]
4. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
[TBL] [Abstract][Full Text] [Related]
5. Enhanced Operational Characteristics Attained by Applying HfO
Choi JH; Kang WS; Kim D; Kim JH; Lee JH; Kim KY; Min BG; Kang DM; Kim HS
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374686
[TBL] [Abstract][Full Text] [Related]
6. Breakdown Voltage Enhancement in AlGaN/GaN High-Electron Mobility Transistor by Optimizing Gate Field-Plate Structure.
Park YJ; Kwak HT; Chang SB; Kim HS
J Nanosci Nanotechnol; 2019 Apr; 19(4):2298-2301. PubMed ID: 30486986
[TBL] [Abstract][Full Text] [Related]
7. Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage.
Xia X; Guo Z; Sun H
Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832730
[TBL] [Abstract][Full Text] [Related]
8. Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance.
Khan MA; Heo JW; Kim HS; Park HC
J Nanosci Nanotechnol; 2014 Nov; 14(11):8141-7. PubMed ID: 25958488
[TBL] [Abstract][Full Text] [Related]
9. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
Hong S; Rana Au; Heo JW; Kim HS
J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
[TBL] [Abstract][Full Text] [Related]
10. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
[TBL] [Abstract][Full Text] [Related]
11. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
[TBL] [Abstract][Full Text] [Related]
12. Optimization AlGaN/GaN HEMT with Field Plate Structures.
Shi N; Wang K; Zhou B; Weng J; Cheng Z
Micromachines (Basel); 2022 Apr; 13(5):. PubMed ID: 35630169
[TBL] [Abstract][Full Text] [Related]
13. Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor.
Liu CH; Huang CR; Wang HC; Kang YJ; Chiu HC; Kao HL; Chu KH; Kuo HC; Chen CT; Chang KJ
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144177
[TBL] [Abstract][Full Text] [Related]
14. Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation.
Sheu G; Song YL; Mogarala R; Susmitha D; Issac K
Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208294
[TBL] [Abstract][Full Text] [Related]
15. A Novel AlGaN/Si
Guo J; Hu S; Li P; Jiang J; Wang R; Wang Y; Wu H
Micromachines (Basel); 2022 Mar; 13(3):. PubMed ID: 35334756
[TBL] [Abstract][Full Text] [Related]
16. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
[TBL] [Abstract][Full Text] [Related]
17. A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application.
Guan H; Shen G; Liu S; Jiang C; Wu J
Micromachines (Basel); 2023 Jan; 14(1):. PubMed ID: 36677229
[TBL] [Abstract][Full Text] [Related]
18. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.
Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y
Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635
[TBL] [Abstract][Full Text] [Related]
19. DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure.
Kwak HT; Jang KW; Kim HJ; Lee SH; Lim JW; Kim HS
J Nanosci Nanotechnol; 2019 Apr; 19(4):2319-2322. PubMed ID: 30486991
[TBL] [Abstract][Full Text] [Related]
20. A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance.
Liu J; Guo Y; Zhang J; Yao J; Li M; Zhang M; Chen J; Huang X; Huang C
Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683299
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
