These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

163 related articles for article (PubMed ID: 36441915)

  • 1. Modulation Doping of Single-Layer Semiconductors for Improved Contact at Metal Interfaces.
    Cho Y; Schleder GR; Larson DT; Brutschea E; Byun KE; Park H; Kim P; Kaxiras E
    Nano Lett; 2022 Dec; 22(23):9700-9706. PubMed ID: 36441915
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors.
    Murastov G; Aslam MA; Leitner S; Tkachuk V; Plutnarová I; Pavlica E; Rodriguez RD; Sofer Z; Matković A
    Nanomaterials (Basel); 2024 Mar; 14(5):. PubMed ID: 38470809
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions.
    Yang S; Cha J; Kim JC; Lee D; Huh W; Kim Y; Lee SW; Park HG; Jeong HY; Hong S; Lee GH; Lee CH
    Nano Lett; 2020 Apr; 20(4):2443-2451. PubMed ID: 32191480
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Alloyed 2D Metal-Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering.
    Kim Y; Kim AR; Yang JH; Chang KE; Kwon JD; Choi SY; Park J; Lee KE; Kim DH; Choi SM; Lee KH; Lee BH; Hahm MG; Cho B
    Nano Lett; 2016 Sep; 16(9):5928-33. PubMed ID: 27552187
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects.
    Liu X; Choi MS; Hwang E; Yoo WJ; Sun J
    Adv Mater; 2022 Apr; 34(15):e2108425. PubMed ID: 34913205
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Forming Stable van der Waals Contacts between Metals and 2D Semiconductors.
    Kwon G; Kim HS; Jeong K; Kim M; Nam GH; Park H; Yoo K; Cho MH
    Small Methods; 2023 Sep; 7(9):e2300376. PubMed ID: 37291738
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low Resistance Contact to P-Type Monolayer WSe
    Xie J; Zhang Z; Zhang H; Nagarajan V; Zhao W; Kim HL; Sanborn C; Qi R; Chen S; Kahn S; Watanabe K; Taniguchi T; Zettl A; Crommie MF; Analytis J; Wang F
    Nano Lett; 2024 May; 24(20):5937-5943. PubMed ID: 38712885
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Enhanced carrier transport by transition metal doping in WS
    Liu M; Wei S; Shahi S; Jaiswal HN; Paletti P; Fathipour S; Remškar M; Jiao J; Hwang W; Yao F; Li H
    Nanoscale; 2020 Sep; 12(33):17253-17264. PubMed ID: 32329484
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Mechanism of charge redistribution at the metal-semiconductor and semiconductor-semiconductor interfaces of metal-bilayer MoS
    Wang Q; Shao Y; Shi X
    J Chem Phys; 2020 Jun; 152(24):244701. PubMed ID: 32610946
    [TBL] [Abstract][Full Text] [Related]  

  • 10. New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts.
    Lee SY; Yun WS; Lee JD
    ACS Appl Mater Interfaces; 2017 Mar; 9(8):7873-7877. PubMed ID: 28182398
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Contact engineering for 2D Janus MoSSe/metal junctions.
    Shu Y; Li T; Miao N; Gou J; Huang X; Cui Z; Xiong R; Wen C; Zhou J; Sa B; Sun Z
    Nanoscale Horiz; 2024 Jan; 9(2):264-277. PubMed ID: 38019263
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Molecule-Upgraded van der Waals Contacts for Schottky-Barrier-Free Electronics.
    Zhang X; Kang Z; Gao L; Liu B; Yu H; Liao Q; Zhang Z; Zhang Y
    Adv Mater; 2021 Nov; 33(45):e2104935. PubMed ID: 34569109
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High-Throughput Computational Screening of All-MXene Metal-Semiconductor Junctions for Schottky-Barrier-Free Contacts with Weak Fermi-Level Pinning.
    Yan J; Cao D; Li M; Luo Q; Chen X; Su L; Shu H
    Small; 2023 Nov; 19(44):e2303675. PubMed ID: 37381648
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Recessed-Channel WSe
    Lee D; Choi Y; Kim J; Kim J
    ACS Nano; 2022 May; 16(5):8484-8492. PubMed ID: 35575475
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Non-invasively improving the Schottky barrier of MoS
    Fang Q; Zhao X; Yuan L; Wang B; Xia C; Ma F
    Phys Chem Chem Phys; 2021 Jul; 23(27):14796-14802. PubMed ID: 34198313
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Band Structure Engineering of Layered WSe
    Park JH; Rai A; Hwang J; Zhang C; Kwak I; Wolf SF; Vishwanath S; Liu X; Dobrowolska M; Furdyna J; Xing HG; Cho K; Banerjee SK; Kummel AC
    ACS Nano; 2019 Jul; 13(7):7545-7555. PubMed ID: 31260257
    [TBL] [Abstract][Full Text] [Related]  

  • 17. General criterion to distinguish between Schottky and Ohmic contacts at the metal/two-dimensional semiconductor interface.
    Chen Y; Li Y; Wu J; Duan W
    Nanoscale; 2017 Feb; 9(5):2068-2073. PubMed ID: 28116389
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Suppressed Fermi Level Pinning and Wide-Range Tunable Schottky Barrier in CrX
    Hu Y; Hu X; Wang Y; Lu C; Krasheninnikov AV; Chen Z; Sun L
    J Phys Chem Lett; 2023 Mar; 14(11):2807-2815. PubMed ID: 36912604
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Antimony-Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel.
    Lin YT; Hsu CH; Chou AS; Fong ZY; Chuu CP; Chang SJ; Hsu YW; Chou SA; Liew SL; Chiu TY; Hou FR; Ni IC; Hou DV; Cheng CC; Radu IP; Wu CI
    Nano Lett; 2024 Jul; ():. PubMed ID: 38981026
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS
    Khan MA; Rathi S; Lee C; Lim D; Kim Y; Yun SJ; Youn DH; Kim GH
    ACS Appl Mater Interfaces; 2018 Jul; 10(28):23961-23967. PubMed ID: 29938500
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.