These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

147 related articles for article (PubMed ID: 36500097)

  • 1. Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN.
    Zaiter A; Michon A; Nemoz M; Courville A; Vennéguès P; Ottapilakkal V; Vuong P; Sundaram S; Ougazzaden A; Brault J
    Materials (Basel); 2022 Dec; 15(23):. PubMed ID: 36500097
    [TBL] [Abstract][Full Text] [Related]  

  • 2. (Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.
    Zaiter A; Nikitskiy N; Nemoz M; Vuong P; Ottapilakkal V; Sundaram S; Ougazzaden A; Brault J
    Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686912
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Epitaxy of (11-22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy.
    Yan X; Sun M; Ji J; He Z; Zhang J; Sun W
    Materials (Basel); 2024 Jan; 17(2):. PubMed ID: 38255495
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.
    Wang L; Yang S; Gao Y; Yang J; Duo Y; Song S; Yan J; Wang J; Li J; Wei T
    ACS Appl Mater Interfaces; 2023 May; 15(19):23501-23511. PubMed ID: 37134325
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy.
    Tasi CT; Wang WK; Ou SL; Huang SY; Horng RH; Wuu DS
    Nanomaterials (Basel); 2018 Sep; 8(9):. PubMed ID: 30201865
    [TBL] [Abstract][Full Text] [Related]  

  • 6. The Structural Evolution of Semipolar (11-22) Plane AlN Tem-Plate on
    Zhang F; Zhang J; Huang L; Liu S; Luo W; Kang J; Liang Z; Cao J; Zhang C; Wang Q; Yuan Y
    Materials (Basel); 2022 Apr; 15(8):. PubMed ID: 35454640
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing.
    Yue W; Liu R; Li P; Zhou X; Liu Y; Yang B; Liu Y; Wang X
    Micromachines (Basel); 2023 Feb; 14(2):. PubMed ID: 36838167
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy.
    Laleyan DA; Mengle K; Zhao S; Wang Y; Kioupakis E; Mi Z
    Opt Express; 2018 Sep; 26(18):23031-23039. PubMed ID: 30184959
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices.
    Lee SJ; Jeon SR; Song YH; Choi YJ; Oh HG; Lee HY
    J Nanosci Nanotechnol; 2021 Sep; 21(9):4881-4885. PubMed ID: 33691883
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates.
    Wu J; Li P; Xu S; Zhou X; Tao H; Yue W; Wang Y; Wu J; Zhang Y; Hao Y
    Materials (Basel); 2020 Nov; 13(22):. PubMed ID: 33202801
    [TBL] [Abstract][Full Text] [Related]  

  • 11. AlN epitaxy on SiC by low-temperature atomic layer deposition
    Kao WC; Lee WH; Yi SH; Shen TH; Lin HC; Chen MJ
    RSC Adv; 2019 Apr; 9(22):12226-12231. PubMed ID: 35515870
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates.
    Nakanishi Y; Hayashi Y; Hamachi T; Tohei T; Nakajima Y; Xiao S; Shojiki K; Miyake H; Sakai A
    J Electron Mater; 2023 Mar; ():1-10. PubMed ID: 37363789
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN.
    Vuong P; Sundaram S; Mballo A; Patriarche G; Leone S; Benkhelifa F; Karrakchou S; Moudakir T; Gautier S; Voss PL; Salvestrini JP; Ougazzaden A
    ACS Appl Mater Interfaces; 2020 Dec; 12(49):55460-55466. PubMed ID: 33237738
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition.
    Seppänen H; Kim I; Etula J; Ubyivovk E; Bouravleuv A; Lipsanen H
    Materials (Basel); 2019 Jan; 12(3):. PubMed ID: 30696077
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer.
    Mansor M; Norhaniza R; Shuhaimi A; Hisyam MI; Omar AZ; Williams A; Mat Hussin MR
    Sci Rep; 2023 May; 13(1):8793. PubMed ID: 37258537
    [TBL] [Abstract][Full Text] [Related]  

  • 16. High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.
    Wang J; Xu F; He C; Zhang L; Lu L; Wang X; Qin Z; Shen B
    Sci Rep; 2017 Feb; 7():42747. PubMed ID: 28220829
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers.
    Wei W; Peng Y; Yang Y; Xiao K; Maraj M; Yang J; Wang Y; Sun W
    Nanomaterials (Basel); 2022 Nov; 12(22):. PubMed ID: 36432223
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Structural and optical properties of self-assembled AlN nanowires grown on SiO
    Gačević Ž; Grandal J; Guo Q; Kirste R; Varela M; Sitar Z; Sánchez García MA
    Nanotechnology; 2021 May; 32(19):195601. PubMed ID: 33535196
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.
    Shih HY; Lee WH; Kao WC; Chuang YC; Lin RM; Lin HC; Shiojiri M; Chen MJ
    Sci Rep; 2017 Jan; 7():39717. PubMed ID: 28045075
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.
    Yang Y; Liu Y; Wang L; Zhang S; Lu H; Peng Y; Wei W; Yang J; Feng ZC; Wan L; Klein B; Ferguson IT; Sun W
    Materials (Basel); 2023 Nov; 16(23):. PubMed ID: 38068186
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.