190 related articles for article (PubMed ID: 36504734)
1. Uniform self-rectifying resistive random-access memory based on an MXene-TiO
Zang C; Li B; Sun Y; Feng S; Wang XZ; Wang X; Sun DM
Nanoscale Adv; 2022 Nov; 4(23):5062-5069. PubMed ID: 36504734
[TBL] [Abstract][Full Text] [Related]
2. High-performance resistive random access memory using two-dimensional electron gas electrode and its switching mechanism analysis.
Kim J; Kwon O; Lee K; Han G; Hwang H
Nanotechnology; 2023 Oct; 35(2):. PubMed ID: 37827148
[TBL] [Abstract][Full Text] [Related]
3. Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.
Oh SI; Rani JR; Hong SM; Jang JH
Nanoscale; 2017 Oct; 9(40):15314-15322. PubMed ID: 28820212
[TBL] [Abstract][Full Text] [Related]
4. Simplified ZrTiO x -based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode.
Lin CC; Wu YH; Chang YT; Sun CE
Nanoscale Res Lett; 2014; 9(1):275. PubMed ID: 24936165
[TBL] [Abstract][Full Text] [Related]
5. Bipolar Resistive Switching Characteristics of HfO
Zhang W; Kong JZ; Cao ZY; Li AD; Wang LG; Zhu L; Li X; Cao YQ; Wu D
Nanoscale Res Lett; 2017 Dec; 12(1):393. PubMed ID: 28599512
[TBL] [Abstract][Full Text] [Related]
6. Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO₂-Based Resistive Random Access Memory Devices with Different Electrode Materials.
Khorolsuren B; Lu S; Sun C; Jin F; Mo W; Song J; Dong K
J Nanosci Nanotechnol; 2020 Oct; 20(10):6489-6494. PubMed ID: 32385003
[TBL] [Abstract][Full Text] [Related]
7. Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.
Gao S; Zeng F; Li F; Wang M; Mao H; Wang G; Song C; Pan F
Nanoscale; 2015 Apr; 7(14):6031-8. PubMed ID: 25765948
[TBL] [Abstract][Full Text] [Related]
8. Asymmetric Bipolar Resistive Switching of Halide Perovskite Film in Contact with TiO
Lee S; Wolfe S; Torres J; Yun M; Lee JK
ACS Appl Mater Interfaces; 2021 Jun; 13(23):27209-27216. PubMed ID: 34080828
[TBL] [Abstract][Full Text] [Related]
9. Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.
Sun B; Guo T; Zhou G; Ranjan S; Hou W; Hou Y; Zhao Y
J Colloid Interface Sci; 2019 Oct; 553():682-687. PubMed ID: 31252184
[TBL] [Abstract][Full Text] [Related]
10. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.
Park SP; Tak YJ; Kim HJ; Lee JH; Yoo H; Kim HJ
Adv Mater; 2018 Jun; 30(26):e1800722. PubMed ID: 29761552
[TBL] [Abstract][Full Text] [Related]
11. Engineering of self-rectifying filamentary resistive switching in LiNbO
You T; Huang K; Zhao X; Yi A; Chen C; Ren W; Jin T; Lin J; Shuai Y; Luo W; Zhou M; Yu W; Ou X
Sci Rep; 2019 Dec; 9(1):19134. PubMed ID: 31836794
[TBL] [Abstract][Full Text] [Related]
12. Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.
Magyari-Köpe B; Tendulkar M; Park SG; Lee HD; Nishi Y
Nanotechnology; 2011 Jun; 22(25):254029. PubMed ID: 21572196
[TBL] [Abstract][Full Text] [Related]
13. Controlling Resistive Switching by Using an Optimized MoS
Qiu JT; Samanta S; Dutta M; Ginnaram S; Maikap S
Langmuir; 2019 Mar; 35(11):3897-3906. PubMed ID: 30791683
[TBL] [Abstract][Full Text] [Related]
14. Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO
Rana AM; Akbar T; Ismail M; Ahmad E; Hussain F; Talib I; Imran M; Mehmood K; Iqbal K; Nadeem MY
Sci Rep; 2017 Jan; 7():39539. PubMed ID: 28079056
[TBL] [Abstract][Full Text] [Related]
15. Presetting conductive pathway induced the switching uniformity evolution of a-SiN
Sun Y; Ma Z; Jiang X; Tan D; Zhang H; Zhang X; Liu J; Yang H; Li W; Xu L; Chen K; Feng D
Nanotechnology; 2018 Oct; 29(41):415701. PubMed ID: 30004387
[TBL] [Abstract][Full Text] [Related]
16. Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory.
Kim SM; Kim HJ; Jung HJ; Kim SH; Park JY; Seok TJ; Park TJ; Lee SW
ACS Appl Mater Interfaces; 2019 Aug; 11(33):30028-30036. PubMed ID: 31343152
[TBL] [Abstract][Full Text] [Related]
17. Ti-Doped GaO
Park JH; Jeon DS; Kim TG
ACS Appl Mater Interfaces; 2017 Dec; 9(49):43336-43342. PubMed ID: 29139293
[TBL] [Abstract][Full Text] [Related]
18. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO
Chen KH; Cheng CM; Wang NF; Kao MC
Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570498
[TBL] [Abstract][Full Text] [Related]
19. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt
Wang LG; Cao ZY; Qian X; Zhu L; Cui DP; Li AD; Wu D
ACS Appl Mater Interfaces; 2017 Feb; 9(7):6634-6643. PubMed ID: 28139921
[TBL] [Abstract][Full Text] [Related]
20. Eradicating negative-Set behavior of TiO
Ismail M; Hashmi A; Rana AM; Kim S
Nanotechnology; 2020 Aug; 31(32):325201. PubMed ID: 32316002
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]