These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

117 related articles for article (PubMed ID: 36558310)

  • 1. Investigation into SiO
    Jeong WN; Lee YS; Cho CH; Seong IH; You SJ
    Nanomaterials (Basel); 2022 Dec; 12(24):. PubMed ID: 36558310
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Characterization of SiO
    Cho C; You K; Kim S; Lee Y; Lee J; You S
    Materials (Basel); 2021 Sep; 14(17):. PubMed ID: 34501123
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.
    Kim NH; Jeon MH; Kim TH; Yeom GY
    J Nanosci Nanotechnol; 2015 Nov; 15(11):8667-73. PubMed ID: 26726572
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Investigation of SiO
    Sung D; Wen L; Tak H; Lee H; Kim D; Yeom G
    Materials (Basel); 2022 Feb; 15(4):. PubMed ID: 35207841
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.
    Kim S; Choi G; Chae H; Lee NE
    J Nanosci Nanotechnol; 2016 May; 16(5):5143-9. PubMed ID: 27483889
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns.
    Lee J; Efremov A; Yeom GY; Lim N; Kwon KH
    J Nanosci Nanotechnol; 2015 Oct; 15(10):8340-7. PubMed ID: 26726514
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Pulse-biased etching of Si3N4-layer in capacitively-coupled plasmas for nano-scale patterning of multi-level resist structures.
    Lee H; Kim S; Choi G; Lee NE
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9470-6. PubMed ID: 25971085
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Low-Temperature Plasma Diagnostics to Investigate the Process Window Shift in Plasma Etching of SiO
    Lee Y; Kim S; Lee J; Cho C; Seong I; You S
    Sensors (Basel); 2022 Aug; 22(16):. PubMed ID: 36015787
    [TBL] [Abstract][Full Text] [Related]  

  • 9. On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO
    Efremov A; Lee BJ; Kwon KH
    Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33804274
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Database Development of SiO
    Lee Y; Yeom H; Choi D; Kim S; Lee J; Kim J; Lee H; You S
    Nanomaterials (Basel); 2022 Oct; 12(21):. PubMed ID: 36364604
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Study of optical emission spectroscopy using modified Boltzmann plot in dual-frequency synchronized pulsed capacitively coupled discharges with DC bias at low-pressure in Ar/O
    Sahu BB; Nakane K; Ishikawa K; Sekine M; Tsutsumi T; Gohira T; Ohya Y; Ohno N; Hori M
    Phys Chem Chem Phys; 2022 Jun; 24(22):13883-13896. PubMed ID: 35621157
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Ion-Enhanced Etching Characteristics of sp
    Li J; Kim Y; Han S; Chae H
    Materials (Basel); 2021 May; 14(11):. PubMed ID: 34072492
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C
    Metzler D; Li C; Engelmann S; Bruce RL; Joseph EA; Oehrlein GS
    J Chem Phys; 2017 Feb; 146(5):052801. PubMed ID: 28178847
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Etching characteristics and mechanism of SiN(x) films for nano-devices in CH2F2/O2/Ar inductively coupled plasma: effect of O2 mixing ratio.
    Son J; Efremov A; Yun SJ; Yeom GY; Kwonl KH
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9534-40. PubMed ID: 25971095
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma.
    Jeon MH; Park JW; Yun DH; Kim KN; Yeom GY
    J Nanosci Nanotechnol; 2015 Nov; 15(11):8577-83. PubMed ID: 26726555
    [TBL] [Abstract][Full Text] [Related]  

  • 16. On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.
    Lim N; Efremov A; Yeom GY; Kwon KH
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9670-9. PubMed ID: 25971118
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Etch characteristics of Si and TiO
    Kim SG; Yang KC; Shin YJ; Kim KN; Kim DW; Lee JY; Kim Y; Yeom GY
    Nanotechnology; 2020 Apr; 31(26):265302. PubMed ID: 32131063
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Enhanced wet etching of patterned GaN with ion implantation.
    Gao Y; Lan C; Xue J; Yan S; Wang Y; Xu F; Shen B; Chu PK
    J Nanosci Nanotechnol; 2011 Dec; 11(12):10949-53. PubMed ID: 22409032
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Dry Etching Performance and Gas-Phase Parameters of C
    Lim N; Choi YS; Efremov A; Kwon KH
    Materials (Basel); 2021 Mar; 14(7):. PubMed ID: 33805202
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Influence of dry etching on the properties of SiO
    Xie L; Liu H; Zhao J; Jiao H; Zhang J; Wang Z; Cheng X
    Appl Opt; 2020 Feb; 59(5):A128-A134. PubMed ID: 32225364
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.