165 related articles for article (PubMed ID: 36570284)
1. Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO
Koroleva AA; Chernikova AG; Zarubin SS; Korostylev E; Khakimov RR; Zhuk MY; Markeev AM
ACS Omega; 2022 Dec; 7(50):47084-47095. PubMed ID: 36570284
[TBL] [Abstract][Full Text] [Related]
2. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf
Kim SJ; Mohan J; Kim HS; Hwang SM; Kim N; Jung YC; Sahota A; Kim K; Yu HY; Cha PR; Young CD; Choi R; Ahn J; Kim J
Materials (Basel); 2020 Jul; 13(13):. PubMed ID: 32630791
[TBL] [Abstract][Full Text] [Related]
3. Epitaxial Integration on Si(001) of Ferroelectric Hf
Lyu J; Fina I; Fontcuberta J; Sánchez F
ACS Appl Mater Interfaces; 2019 Feb; 11(6):6224-6229. PubMed ID: 30657323
[TBL] [Abstract][Full Text] [Related]
4. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.
Chernikova A; Kozodaev M; Markeev A; Negrov D; Spiridonov M; Zarubin S; Bak O; Buragohain P; Lu H; Suvorova E; Gruverman A; Zenkevich A
ACS Appl Mater Interfaces; 2016 Mar; 8(11):7232-7. PubMed ID: 26931409
[TBL] [Abstract][Full Text] [Related]
5. Interface-engineered ferroelectricity of epitaxial Hf
Shi S; Xi H; Cao T; Lin W; Liu Z; Niu J; Lan D; Zhou C; Cao J; Su H; Zhao T; Yang P; Zhu Y; Yan X; Tsymbal EY; Tian H; Chen J
Nat Commun; 2023 Mar; 14(1):1780. PubMed ID: 36997572
[TBL] [Abstract][Full Text] [Related]
6. Reduced fatigue and leakage of ferroelectric TiN/Hf
Hsain HA; Lee Y; Lancaster S; Lomenzo PD; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
Nanotechnology; 2023 Jan; 34(12):. PubMed ID: 36538824
[TBL] [Abstract][Full Text] [Related]
7. On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes.
Khakimov RR; Chernikova AG; Koroleva AA; Markeev AM
Nanomaterials (Basel); 2022 Sep; 12(17):. PubMed ID: 36080096
[TBL] [Abstract][Full Text] [Related]
8. A new approach to achieving strong ferroelectric properties in TiN/Hf
Kim H; Kashir A; Oh S; Hwang H
Nanotechnology; 2021 Jan; 32(5):055703. PubMed ID: 33053526
[TBL] [Abstract][Full Text] [Related]
9. Superhigh energy storage density on-chip capacitors with ferroelectric Hf
He Y; Zheng G; Wu X; Liu WJ; Zhang DW; Ding SJ
Nanoscale Adv; 2022 Oct; 4(21):4648-4657. PubMed ID: 36341289
[TBL] [Abstract][Full Text] [Related]
10. Improved Ferroelectric Properties in Hf
Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M
Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036
[TBL] [Abstract][Full Text] [Related]
11. Effect of ferroelectric and interface films on the tunneling electroresistance of the Al
Shekhawat A; Hsain HA; Lee Y; Jones JL; Moghaddam S
Nanotechnology; 2021 Sep; 32(48):. PubMed ID: 34407525
[TBL] [Abstract][Full Text] [Related]
12. Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.
Zhang X; Chen L; Sun QQ; Wang LH; Zhou P; Lu HL; Wang PF; Ding SJ; Zhang DW
Nanoscale Res Lett; 2015; 10():25. PubMed ID: 25852322
[TBL] [Abstract][Full Text] [Related]
13. A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf
Kim BS; Hyun SD; Moon T; Do Kim K; Lee YH; Park HW; Lee YB; Roh J; Kim BY; Kim HH; Park MH; Hwang CS
Nanoscale Res Lett; 2020 Apr; 15(1):72. PubMed ID: 32266598
[TBL] [Abstract][Full Text] [Related]
14. Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf
Toprasertpong K; Tahara K; Hikosaka Y; Nakamura K; Saito H; Takenaka M; Takagi S
ACS Appl Mater Interfaces; 2022 Nov; 14(45):51137-51148. PubMed ID: 36319949
[TBL] [Abstract][Full Text] [Related]
15. Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO
Zhang Y; Fan Z; Wang D; Wang J; Zou Z; Li Y; Li Q; Tao R; Chen D; Zeng M; Gao X; Dai J; Zhou G; Lu X; Liu JM
ACS Appl Mater Interfaces; 2020 Sep; 12(36):40510-40517. PubMed ID: 32805812
[TBL] [Abstract][Full Text] [Related]
16. Polarization-dependent electric potential distribution across nanoscale ferroelectric Hf
Matveyev Y; Mikheev V; Negrov D; Zarubin S; Kumar A; Grimley ED; LeBeau JM; Gloskovskii A; Tsymbal EY; Zenkevich A
Nanoscale; 2019 Nov; 11(42):19814-19822. PubMed ID: 31624822
[TBL] [Abstract][Full Text] [Related]
17. Effect of Polarization Reversal in Ferroelectric TiN/Hf
Matveyev Y; Negrov D; Chernikova A; Lebedinskii Y; Kirtaev R; Zarubin S; Suvorova E; Gloskovskii A; Zenkevich A
ACS Appl Mater Interfaces; 2017 Dec; 9(49):43370-43376. PubMed ID: 29160064
[TBL] [Abstract][Full Text] [Related]
18. Improved Ferroelectric Switching Endurance of La-Doped Hf
Chernikova AG; Kozodaev MG; Negrov DV; Korostylev EV; Park MH; Schroeder U; Hwang CS; Markeev AM
ACS Appl Mater Interfaces; 2018 Jan; 10(3):2701-2708. PubMed ID: 29282976
[TBL] [Abstract][Full Text] [Related]
19. Improved Endurance of Ferroelectric Hf
Chen M; Lv S; Wang B; Jiang P; Chen Y; Ding Y; Wang Y; Chen Y; Wang Y
Nanomaterials (Basel); 2023 May; 13(10):. PubMed ID: 37242025
[TBL] [Abstract][Full Text] [Related]
20. Ferroelectricity in Hf
Chouprik A; Zakharchenko S; Spiridonov M; Zarubin S; Chernikova A; Kirtaev R; Buragohain P; Gruverman A; Zenkevich A; Negrov D
ACS Appl Mater Interfaces; 2018 Mar; 10(10):8818-8826. PubMed ID: 29464951
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]