These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

144 related articles for article (PubMed ID: 36578201)

  • 1. Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography.
    Wang Z; Chen J; Yu T; Zeng Y; Guo X; Wang S; Allenet T; Vockenhuber M; Ekinci Y; Yang G; Li Y
    ACS Appl Mater Interfaces; 2023 Jan; 15(1):2289-2300. PubMed ID: 36578201
    [TBL] [Abstract][Full Text] [Related]  

  • 2. A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography.
    Cui X; Zhang S; Cong X; Gao J; Wu Y; Guo X; Hu R; Wang S; Chen J; Li Y; Du W; Yang G
    Nanotechnology; 2024 Apr; 35(29):. PubMed ID: 38593758
    [TBL] [Abstract][Full Text] [Related]  

  • 3. EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer.
    Moura CADS; Belmonte GK; Reddy PG; Gonslaves KE; Weibel DE
    RSC Adv; 2018 Mar; 8(20):10930-10938. PubMed ID: 35541508
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.
    Ashby PD; Olynick DL; Ogletree DF; Naulleau PP
    Adv Mater; 2015 Oct; 27(38):5813-9. PubMed ID: 26079187
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography.
    Kumar R; Chauhan M; Moinuddin MG; Sharma SK; Gonsalves KE
    ACS Appl Mater Interfaces; 2020 Apr; 12(17):19616-19624. PubMed ID: 32267144
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Chemically Amplified Molecular Glass Photoresist Regulated by 2-Aminoanthracene Additive for Electron Beam Lithography and Extreme Ultraviolet Lithography.
    Zhang S; Chen L; Gao J; Cui X; Cong X; Guo X; Hu R; Wang S; Chen J; Li Y; Yang G
    ACS Omega; 2023 Aug; 8(30):26739-26748. PubMed ID: 37546582
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art.
    Grigorescu AE; Hagen CW
    Nanotechnology; 2009 Jul; 20(29):292001. PubMed ID: 19567961
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Patterning of tailored polycarbonate based non-chemically amplified resists using extreme ultraviolet lithography.
    Yu A; Liu H; Blinco JP; Jack KS; Leeson M; Younkin TR; Whittaker AK; Blakey I
    Macromol Rapid Commun; 2010 Aug; 31(16):1449-55. PubMed ID: 21567550
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Polystyrene negative resist for high-resolution electron beam lithography.
    Ma S; Con C; Yavuz M; Cui B
    Nanoscale Res Lett; 2011 Jul; 6(1):446. PubMed ID: 21749679
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A Single-Component Molecular Glass Resist Based on Tetraphenylsilane Derivatives for Electron Beam Lithography.
    Wang Y; Yuan J; Chen J; Zeng Y; Yu T; Guo X; Wang S; Yang G; Li Y
    ACS Omega; 2023 Apr; 8(13):12173-12182. PubMed ID: 37033792
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Molecular Glass Resists Based on Tetraphenylsilane Derivatives: Effect of Protecting Ratios on Advanced Lithography.
    Wang Y; Chen J; Zeng Y; Yu T; Guo X; Wang S; Allenet T; Vockenhuber M; Ekinci Y; Zhao J; Yang S; Wu Y; Yang G; Li Y
    ACS Omega; 2022 Aug; 7(33):29266-29273. PubMed ID: 36033723
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake.
    Miyoshi H; Taniguchi J
    J Vac Sci Technol B Nanotechnol Microelectron; 2015 Nov; 33(6):06FD05. PubMed ID: 26594597
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Patterning at the Resolution Limit of Commercial Electron Beam Lithography.
    Saifullah MSM; Asbahi M; Neo DCJ; Mahfoud Z; Tan HR; Ha ST; Dwivedi N; Dutta T; Bin Dolmanan S; Aabdin Z; Bosman M; Ganesan R; Tripathy S; Hasko DG; Valiyaveettil S
    Nano Lett; 2022 Sep; 22(18):7432-7440. PubMed ID: 36069429
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications.
    Reddy PG; Pal SP; Kumar P; Pradeep CP; Ghosh S; Sharma SK; Gonsalves KE
    ACS Appl Mater Interfaces; 2017 Jan; 9(1):17-21. PubMed ID: 28009502
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Changes in the near edge x-ray absorption fine structure of hybrid organic-inorganic resists upon exposure.
    Fallica R; Watts B; Rösner B; Della Giustina G; Brigo L; Brusatin G; Ekinci Y
    Nanotechnology; 2018 Sep; 29(36):36LT03. PubMed ID: 29901453
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Vapor-Phase Nanopatterning of Aminosilanes with Electron Beam Lithography: Understanding and Minimizing Background Functionalization.
    Fetterly CR; Olsen BC; Luber EJ; Buriak JM
    Langmuir; 2018 Apr; 34(16):4780-4792. PubMed ID: 29614858
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Line edge roughness of a latent image in post-optical lithography.
    Saeki A; Kozawa T; Tagawa S; Cao HB
    Nanotechnology; 2006 Mar; 17(6):1543-6. PubMed ID: 26558555
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20-450 eV.
    Fallica R; Mahne N; Conard T; Vanleenhove A; de Simone D; Nannarone S
    ACS Appl Mater Interfaces; 2023 Jul; 15(29):35483-35494. PubMed ID: 37449783
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Molecular Layer Deposition of a Hafnium-Based Hybrid Thin Film as an Electron Beam Resist.
    Shi J; Ravi A; Richey NE; Gong H; Bent SF
    ACS Appl Mater Interfaces; 2022 Jun; ():. PubMed ID: 35653232
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Design and performance of EUV resist containing photoacid generator for sub-100 nm lithography.
    Thiyagarajan M; Gonsalves KE; Dean K; Sykes CH
    J Nanosci Nanotechnol; 2005 Jul; 5(7):1181-3. PubMed ID: 16108447
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.