These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
182 related articles for article (PubMed ID: 36580180)
1. Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications. Lee M; Kim TW; Park CY; Lee K; Taniguchi T; Watanabe K; Kim MG; Hwang DK; Lee YT Nanomicro Lett; 2022 Dec; 15(1):22. PubMed ID: 36580180 [TBL] [Abstract][Full Text] [Related]
2. Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices. Shin Y; Kwon J; Jeong Y; Watanabe K; Taniguchi T; Im S; Lee GH Small; 2022 Jul; 18(28):e2200882. PubMed ID: 35719033 [TBL] [Abstract][Full Text] [Related]
3. Anti-Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices. Cheng R; Yin L; Wang F; Wang Z; Wang J; Wen Y; Huang W; Sendeku MG; Feng L; Liu Y; He J Adv Mater; 2019 Jun; 31(24):e1901144. PubMed ID: 30998266 [TBL] [Abstract][Full Text] [Related]
4. MoS He X; Chow W; Liu F; Tay B; Liu Z Small; 2017 Jan; 13(2):. PubMed ID: 27762499 [TBL] [Abstract][Full Text] [Related]
5. Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials. Shim J; Jo SH; Kim M; Song YJ; Kim J; Park JH ACS Nano; 2017 Jun; 11(6):6319-6327. PubMed ID: 28609089 [TBL] [Abstract][Full Text] [Related]
6. Ambipolar Barristors for Reconfigurable Logic Circuits. Liu Y; Zhang G; Zhou H; Li Z; Cheng R; Xu Y; Gambin V; Huang Y; Duan X Nano Lett; 2017 Mar; 17(3):1448-1454. PubMed ID: 28165746 [TBL] [Abstract][Full Text] [Related]
7. A Bi-Anti-Ambipolar Field Effect Transistor. Paul Inbaraj CR; Mathew RJ; Ulaganathan RK; Sankar R; Kataria M; Lin HY; Chen YT; Hofmann M; Lee CH; Chen YF ACS Nano; 2021 May; 15(5):8686-8693. PubMed ID: 33970616 [TBL] [Abstract][Full Text] [Related]
8. All-2D ReS Kwon J; Shin Y; Kwon H; Lee JY; Park H; Watanabe K; Taniguchi T; Kim J; Lee CH; Im S; Lee GH Sci Rep; 2019 Jul; 9(1):10354. PubMed ID: 31316081 [TBL] [Abstract][Full Text] [Related]
9. Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic Devices. Son H; Choi H; Jeon J; Kim YJ; Choi S; Cho JH; Lee S ACS Appl Mater Interfaces; 2021 Feb; 13(7):8692-8699. PubMed ID: 33586957 [TBL] [Abstract][Full Text] [Related]
10. Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics. Ming Z; Sun H; Wang H; Sheng Z; Wang Y; Zhang Z ACS Appl Mater Interfaces; 2024 Aug; 16(34):45131-45138. PubMed ID: 39145480 [TBL] [Abstract][Full Text] [Related]
11. WSe Li C; Yan X; Song X; Bao W; Ding S; Zhang DW; Zhou P Nanotechnology; 2017 Oct; 28(41):415201. PubMed ID: 28726689 [TBL] [Abstract][Full Text] [Related]
12. Van der Waals negative capacitance transistors. Wang X; Yu P; Lei Z; Zhu C; Cao X; Liu F; You L; Zeng Q; Deng Y; Zhu C; Zhou J; Fu Q; Wang J; Huang Y; Liu Z Nat Commun; 2019 Jul; 10(1):3037. PubMed ID: 31292435 [TBL] [Abstract][Full Text] [Related]
13. Oxide Semiconductor Heterojunction Transistor with Negative Differential Transconductance for Multivalued Logic Circuits. Shin JC; Lee JH; Jin M; Lee H; Kim J; Lee J; Lee C; You W; Yang H; Kim YS ACS Nano; 2024 Jan; 18(2):1543-1554. PubMed ID: 38173253 [TBL] [Abstract][Full Text] [Related]
14. Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D-3D heterostructures. Li T; Li X; Tian M; Hu Q; Wang X; Li S; Wu Y Nanoscale; 2019 Mar; 11(11):4701-4706. PubMed ID: 30830137 [TBL] [Abstract][Full Text] [Related]
15. Modulating the Functions of MoS Duong NT; Lee J; Bang S; Park C; Lim SC; Jeong MS ACS Nano; 2019 Apr; 13(4):4478-4485. PubMed ID: 30938981 [TBL] [Abstract][Full Text] [Related]
16. Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits. Yoo H; On S; Lee SB; Cho K; Kim JJ Adv Mater; 2019 Jul; 31(29):e1808265. PubMed ID: 31116897 [TBL] [Abstract][Full Text] [Related]
17. Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga Kim J; Kim J ACS Appl Mater Interfaces; 2020 Feb; 12(6):7310-7316. PubMed ID: 31898449 [TBL] [Abstract][Full Text] [Related]
18. Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS2 Heterostructure Devices. Rathi S; Lee I; Lim D; Wang J; Ochiai Y; Aoki N; Watanabe K; Taniguchi T; Lee GH; Yu YJ; Kim P; Kim GH Nano Lett; 2015 Aug; 15(8):5017-24. PubMed ID: 26091357 [TBL] [Abstract][Full Text] [Related]
19. Negative differential transconductance device with a stepped gate dielectric for multi-valued logic circuits. Andreev M; Choi JW; Koo J; Kim H; Jung S; Kim KH; Park JH Nanoscale Horiz; 2020 Oct; 5(10):1378-1385. PubMed ID: 32725030 [TBL] [Abstract][Full Text] [Related]
20. High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS Shin GH; Lee GB; An ES; Park C; Jin HJ; Lee KJ; Oh DS; Kim JS; Choi YK; Choi SY ACS Appl Mater Interfaces; 2020 Jan; 12(4):5106-5112. PubMed ID: 31898448 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]