183 related articles for article (PubMed ID: 36588621)
1. Ferroelectric-Antiferroelectric Transition of Hf
Dahlberg H; Persson AEO; Athle R; Wernersson LE
ACS Appl Electron Mater; 2022 Dec; 4(12):6357-6363. PubMed ID: 36588621
[TBL] [Abstract][Full Text] [Related]
2. Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf
Hsiang KY; Liao CY; Wang JF; Lou ZF; Lin CY; Chiang SH; Liu CW; Hou TH; Lee MH
Nanomaterials (Basel); 2021 Oct; 11(10):. PubMed ID: 34685126
[TBL] [Abstract][Full Text] [Related]
3. Improvement of endurance and switching speed in Hf
Jang H; Kashir A; Oh S; Hwang H
Nanotechnology; 2022 Jul; 33(39):. PubMed ID: 35714563
[TBL] [Abstract][Full Text] [Related]
4. A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement.
Kim HJ; Park MH; Kim YJ; Lee YH; Moon T; Kim KD; Hyun SD; Hwang CS
Nanoscale; 2016 Jan; 8(3):1383-9. PubMed ID: 26511062
[TBL] [Abstract][Full Text] [Related]
5. Effect of a ZrO
Song JN; Oh MJ; Yoon CB
Materials (Basel); 2023 Feb; 16(5):. PubMed ID: 36903074
[TBL] [Abstract][Full Text] [Related]
6. Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO
Zhang Y; Fan Z; Wang D; Wang J; Zou Z; Li Y; Li Q; Tao R; Chen D; Zeng M; Gao X; Dai J; Zhou G; Lu X; Liu JM
ACS Appl Mater Interfaces; 2020 Sep; 12(36):40510-40517. PubMed ID: 32805812
[TBL] [Abstract][Full Text] [Related]
7. Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia-Zirconia Thin Films.
Hsain HA; Lee Y; Lancaster S; Materano M; Alcala R; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
ACS Appl Mater Interfaces; 2022 Sep; 14(37):42232-42244. PubMed ID: 36069477
[TBL] [Abstract][Full Text] [Related]
8. Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf
Oh Y; Lee SW; Choi JH; Ahn SE; Kim HB; Ahn JH
Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570505
[TBL] [Abstract][Full Text] [Related]
9. Characteristics of Hf
Hong DH; Yoo JH; Park WJ; Kim SW; Kim JH; Uhm SH; Lee HC
Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903776
[TBL] [Abstract][Full Text] [Related]
10. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf
Zhang F; Luo ZD; Yang Q; Zhou J; Wang J; Zhang Z; Fan Q; Peng Y; Wu Z; Liu F; Chen S; He D; Yin H; Han G; Liu Y; Hao Y
ACS Appl Mater Interfaces; 2022 Mar; 14(8):11028-11037. PubMed ID: 35133784
[TBL] [Abstract][Full Text] [Related]
11. Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf
Toprasertpong K; Tahara K; Hikosaka Y; Nakamura K; Saito H; Takenaka M; Takagi S
ACS Appl Mater Interfaces; 2022 Nov; 14(45):51137-51148. PubMed ID: 36319949
[TBL] [Abstract][Full Text] [Related]
12. Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs).
Liao CY; Hsiang KY; Lou ZF; Lin CY; Tseng YJ; Tseng HC; Li ZX; Ray WC; Chang FS; Wang CC; Chen TC; Chang CS; Lee MH
IEEE Trans Ultrason Ferroelectr Freq Control; 2022 Jun; 69(6):2214-2221. PubMed ID: 35380960
[TBL] [Abstract][Full Text] [Related]
13. Enhanced Switching Reliability of Hf
Huang F; Saini B; Yu Z; Yoo C; Thampy V; He X; Baniecki JD; Tsai W; Meng AC; McIntyre PC; Wong S
ACS Appl Mater Interfaces; 2023 Nov; 15(43):50246-50253. PubMed ID: 37856882
[TBL] [Abstract][Full Text] [Related]
14. High polarization and wake-up free ferroelectric characteristics in ultrathin Hf
Yadav M; Kashir A; Oh S; Nikam RD; Kim H; Jang H; Hwang H
Nanotechnology; 2021 Dec; 33(8):. PubMed ID: 34787101
[TBL] [Abstract][Full Text] [Related]
15. Visualizing Ferroelectric Uniformity of Hf
Chang SJ; Teng CY; Lin YJ; Wu TM; Lee MH; Lin BH; Tang MT; Wu TS; Hu C; Tang EY; Tseng YC
ACS Appl Mater Interfaces; 2021 Jun; 13(24):29212-29221. PubMed ID: 34121385
[TBL] [Abstract][Full Text] [Related]
16. Low Voltage Operating 2D MoS
Zhang S; Liu Y; Zhou J; Ma M; Gao A; Zheng B; Li L; Su X; Han G; Zhang J; Shi Y; Wang X; Hao Y
Nanoscale Res Lett; 2020 Aug; 15(1):157. PubMed ID: 32743764
[TBL] [Abstract][Full Text] [Related]
17. Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study.
Saha AK; Gupta SK
Sci Rep; 2020 Jun; 10(1):10207. PubMed ID: 32576840
[TBL] [Abstract][Full Text] [Related]
18. Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures.
Tasneem N; Kashyap H; Chae K; Park C; Lee PC; Lombardo SF; Afroze N; Tian M; Kumarasubramanian H; Hur J; Chen H; Chern W; Yu S; Bandaru P; Ravichandran J; Cho K; Kacher J; Kummel AC; Khan AI
ACS Appl Mater Interfaces; 2022 Sep; 14(38):43897-43906. PubMed ID: 36121320
[TBL] [Abstract][Full Text] [Related]
19. Reduced fatigue and leakage of ferroelectric TiN/Hf
Hsain HA; Lee Y; Lancaster S; Lomenzo PD; Xu B; Mikolajick T; Schroeder U; Parsons GN; Jones JL
Nanotechnology; 2023 Jan; 34(12):. PubMed ID: 36538824
[TBL] [Abstract][Full Text] [Related]
20. HfO
Kang M; Peng Y; Xiao W; Zhang Y; Wang Z; Du P; Jiang H; Liu F; Liu Y; Hao Y; Han G
ACS Appl Mater Interfaces; 2024 Jan; 16(2):2954-2963. PubMed ID: 38166401
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
