These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

125 related articles for article (PubMed ID: 36616095)

  • 1. Towards Efficient Electrically-Driven Deep UVC Lasing: Challenges and Opportunities.
    Nikishin S; Bernussi A; Karpov S
    Nanomaterials (Basel); 2022 Dec; 13(1):. PubMed ID: 36616095
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.
    Xing Z; Wang F; Wang Y; Liou JJ; Liu Y
    Opt Express; 2022 Sep; 30(20):36446-36455. PubMed ID: 36258572
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Alleviated built-in electric field in the active region of AlGaN deep-ultraviolet light-emitting diodes with locally embedded p-i-n junctions.
    Ji Y; Liu M; Liu C
    Appl Opt; 2022 Aug; 61(24):6961-6966. PubMed ID: 36256310
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes.
    Wang Y; Zhang Z; Guo L; Chen Y; Li Y; Qi Z; Ben J; Sun X; Li D
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947677
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Performance enhancement of an N-polar nitride deep-ultraviolet light-emitting diode with compositionally graded p-AlGaN.
    Zhao Y; Deng G; Niu Y; Wang Y; Zhang L; Yu J; Ma H; Chen X; Shi Z; Zhang B; Zhang Y
    Opt Lett; 2022 Jan; 47(2):385-388. PubMed ID: 35030622
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
    Che J; Shao H; Kou J; Tian K; Chu C; Hou X; Zhang Y; Sun Q; Zhang ZH
    Nanoscale Res Lett; 2019 Aug; 14(1):268. PubMed ID: 31388778
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Stack of two III-nitride laser diodes interconnected by a tunnel junction.
    Siekacz M; Muziol G; Hajdel M; Żak M; Nowakowski-Szkudlarek K; Turski H; Sawicka M; Wolny P; Feduniewicz-Żmuda A; Stanczyk S; Moneta J; Skierbiszewski C
    Opt Express; 2019 Feb; 27(4):5784-5791. PubMed ID: 30876173
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier.
    Zhang Z; Yang J; Zhao D; Liang F; Chen P; Liu Z
    Nanomaterials (Basel); 2022 Nov; 12(22):. PubMed ID: 36432275
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.
    Zhang ZH; Huang Chen SW; Chu C; Tian K; Fang M; Zhang Y; Bi W; Kuo HC
    Nanoscale Res Lett; 2018 Apr; 13(1):122. PubMed ID: 29693213
    [TBL] [Abstract][Full Text] [Related]  

  • 10. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission.
    Lee JW; Kim DY; Park JH; Schubert EF; Kim J; Lee J; Kim YI; Park Y; Kim JK
    Sci Rep; 2016 Mar; 6():22537. PubMed ID: 26935402
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes.
    Hamdy KW; Young EC; Alhassan AI; Becerra DL; DenBaars SP; Speck JS; Nakamura S
    Opt Express; 2019 Mar; 27(6):8327-8334. PubMed ID: 31052652
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Establishment of the relationship between the electron energy and the electron injection for AlGaN based ultraviolet light-emitting diodes.
    Zhang ZH; Tian K; Chu C; Fang M; Zhang Y; Bi W; Kuo HC
    Opt Express; 2018 Jul; 26(14):17977-17987. PubMed ID: 30114079
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer.
    Hu J; Zhang J; Zhang Y; Zhang H; Long H; Chen Q; Shan M; Du S; Dai J; Chen C
    Nanoscale Res Lett; 2019 Nov; 14(1):347. PubMed ID: 31754922
    [TBL] [Abstract][Full Text] [Related]  

  • 14. AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects.
    Zhao S; Lu J; Hai X; Yin X
    Micromachines (Basel); 2020 Jan; 11(2):. PubMed ID: 31979274
    [TBL] [Abstract][Full Text] [Related]  

  • 15. On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes.
    Che J; Chu C; Tian K; Kou J; Shao H; Zhang Y; Bi W; Zhang ZH
    Nanoscale Res Lett; 2018 Nov; 13(1):355. PubMed ID: 30411256
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping.
    Wang J; Wang M; Xu F; Liu B; Lang J; Zhang N; Kang X; Qin Z; Yang X; Wang X; Ge W; Shen B
    Light Sci Appl; 2022 Mar; 11(1):71. PubMed ID: 35322013
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters.
    Khan MA; Bermundo JP; Ishikawa Y; Ikenoue H; Fujikawa S; Matsuura E; Kashima Y; Maeda N; Jo M; Hirayama H
    Nanotechnology; 2021 Jan; 32(5):055702. PubMed ID: 33007768
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Identification of type of threading dislocation causing reverse leakage in GaN p-n junctions after continuous forward current stress.
    Narita T; Kanechika M; Kojima J; Watanabe H; Kondo T; Uesugi T; Yamaguchi S; Kimoto Y; Tomita K; Nagasato Y; Ikeda S; Kosaki M; Oka T; Suda J
    Sci Rep; 2022 Jan; 12(1):1458. PubMed ID: 35087156
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Compositionally graded III-nitride alloys: building blocks for efficient ultraviolet optoelectronics and power electronics.
    Zhang H; Huang C; Song K; Yu H; Xing C; Wang D; Liu Z; Sun H
    Rep Prog Phys; 2021 Mar; 84(4):. PubMed ID: 33477132
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.
    Zhao C; Ebaid M; Zhang H; Priante D; Janjua B; Zhang D; Wei N; Alhamoud AA; Shakfa MK; Ng TK; Ooi BS
    Nanoscale; 2018 Aug; 10(34):15980-15988. PubMed ID: 29897082
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.