These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

129 related articles for article (PubMed ID: 36621974)

  • 1. Synthesis of Colloidal GaN and AlN Nanocrystals in Biphasic Molten Salt/Organic Solvent Mixtures under High-Pressure Ammonia.
    Cho W; Zhou Z; Lin R; Ondry JC; Talapin DV
    ACS Nano; 2023 Jan; ():. PubMed ID: 36621974
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Synthesis of Ternary and Quaternary Group III-Arsenide Colloidal Quantum Dots via High-Temperature Cation Exchange in Molten Salts: The Importance of Molten Salt Speciation.
    Ondry JC; Gupta A; Zhou Z; Chang JH; Talapin DV
    ACS Nano; 2024 Jan; 18(1):858-873. PubMed ID: 38108289
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Molten Salt-Assisted Synthesis of Titanium Nitride.
    Parvizian M; Reichholf N; Riaz AA; Bhatt P; Regoutz A; De Roo J
    Small Methods; 2024 Dec; 8(12):e2400228. PubMed ID: 38859636
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE.
    Liu N; Jiang Y; Xiao J; Liang Z; Wang Q; Zhang G
    Front Chem; 2021; 9():671720. PubMed ID: 33996764
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Stability of Graphene and Influence of AlN Surface Pits on GaN Remote Heteroepitaxy for Exfoliation.
    Kwak HM; Lee JS; Park BI; Baik J; Kim J; Jeong WL; Kim KP; Mun SH; Kim H; Kim J; Lee DS
    ACS Nano; 2023 Jun; 17(12):11739-11748. PubMed ID: 37279113
    [TBL] [Abstract][Full Text] [Related]  

  • 6. On Morphology of Aluminum-Gallium Nitride Layers Grown by Halide Vapor Phase Epitaxy: The Role of Total Reactants' Pressure and Ammonia Flow Rate.
    Jaroszynski A; Dabrowski M; Sadovy P; Bockowski M; Czernecki R; Sochacki T
    Materials (Basel); 2024 Jul; 17(14):. PubMed ID: 39063739
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Thermodynamic and kinetic approach in density functional theory studies of microscopic structure of GaN(0001) surface in ammonia-rich conditions.
    Krukowski S; Kempisty P; Jalbout AF
    J Chem Phys; 2008 Dec; 129(23):234705. PubMed ID: 19102550
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.
    Wu P; Funato M; Kawakami Y
    Sci Rep; 2015 Nov; 5():17405. PubMed ID: 26616203
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111).
    Wang P; Wang D; Mondal S; Wu Y; Ma T; Mi Z
    ACS Appl Mater Interfaces; 2022 Apr; 14(13):15747-15755. PubMed ID: 35333528
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Lithium-based Loop for Ambient-Pressure Ammonia Synthesis in a Liquid Alloy-Salt Catalytic System.
    Tang Z; Meng X; Shi Y; Guan X
    ChemSusChem; 2021 Nov; 14(21):4697-4707. PubMed ID: 34467662
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE.
    Semlali E; Avit G; André Y; Gil E; Moskalenko A; Shields P; Dubrovskii VG; Cattoni A; Harmand JC; Trassoudaine A
    Nanotechnology; 2024 Apr; 35(26):. PubMed ID: 38522101
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Novel Composite Nitride Nanoceramics from Reaction-Mixed Nanocrystalline Powders in the System Aluminum Nitride AlN/Gallium Nitride GaN/Titanium Nitride TiN (Al:Ga:Ti = 1:1:1).
    Drygas M; Lejda K; Janik JF; Stelmakh S; Palosz B
    Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329651
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Investigation of AlGaN/GaN Heterostructures Grown on Sputtered AlN Templates with Different Nucleation Layers.
    Liu CY; Zhang YC; Xu SR; Jiang L; Zhang JC; Hao Y
    Materials (Basel); 2019 Dec; 12(24):. PubMed ID: 31817364
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Improving the quality of GaN crystals by using graphene or hexagonal boron nitride nanosheets substrate.
    Zhang L; Li X; Shao Y; Yu J; Wu Y; Hao X; Yin Z; Dai Y; Tian Y; Huo Q; Shen Y; Hua Z; Zhang B
    ACS Appl Mater Interfaces; 2015 Mar; 7(8):4504-10. PubMed ID: 25665033
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Integrating AlN with GdN Thin Films in an in Situ CVD Process: Influence on the Oxidation and Crystallinity of GdN.
    Cwik S; Beer SMJ; Hoffmann S; Krasnopolski M; Rogalla D; Becker HW; Peeters D; Ney A; Devi A
    ACS Appl Mater Interfaces; 2017 Aug; 9(32):27036-27044. PubMed ID: 28782941
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability.
    Lekhal K; Avit G; André Y; Trassoudaine A; Gil E; Varenne C; Bougerol C; Monier G; Castelluci D
    Nanotechnology; 2012 Oct; 23(40):405601. PubMed ID: 22983695
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Contact and Noncontact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals.
    Biacchi AJ; Le ST; Alberding BG; Hagmann JA; Pookpanratana SJ; Heilweil EJ; Richter CA; Hight Walker AR
    ACS Nano; 2018 Oct; 12(10):10045-10060. PubMed ID: 30247875
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10-13) AlN Grown on Sapphire by HVPE.
    Zhang Q; Li X; Zhao J; Sun Z; Lu Y; Liu T; Zhang J
    Micromachines (Basel); 2021 Sep; 12(10):. PubMed ID: 34683204
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN.
    Kamarundzaman A; Abu Bakar AS; Azman A; Omar AZ; Talik NA; Supangat A; Abd Majid WH
    Sci Rep; 2021 May; 11(1):9724. PubMed ID: 33958689
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal-organic vapor phase epitaxy.
    Nagamatsu K; Tsuda S; Miyagawa T; Aono R; Hirayama H; Takashima Y; Naoi Y
    Sci Rep; 2022 May; 12(1):7662. PubMed ID: 35538125
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.