These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

146 related articles for article (PubMed ID: 36649642)

  • 1. Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots.
    Vallejo KD; Cabrera-Perdomo CI; Garrett TA; Drake MD; Liang B; Grossklaus KA; Simmonds PJ
    ACS Nano; 2023 Feb; 17(3):2318-2327. PubMed ID: 36649642
    [TBL] [Abstract][Full Text] [Related]  

  • 2. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate.
    Shuhui Z; Lu W; Zhenwu S; Yanxiang C; Haitao T; Huaiju G; Haiqiang J; Wenxin W; Hong C; Liancheng Z
    Nanoscale Res Lett; 2012 Jan; 7(1):87. PubMed ID: 22277096
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy.
    Fricker D; Atkinson P; Jin X; Lepsa M; Zeng Z; Kovács A; Kibkalo L; Dunin-Borkowski RE; Kardynał BE
    Nanotechnology; 2023 Jan; 34(14):. PubMed ID: 36595322
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness.
    Schuck CF; Roy SK; Garrett T; Yuan Q; Wang Y; Cabrera CI; Grossklaus KA; Vandervelde TE; Liang B; Simmonds PJ
    Sci Rep; 2019 Dec; 9(1):18179. PubMed ID: 31796804
    [TBL] [Abstract][Full Text] [Related]  

  • 5. InGaAs quantum dots grown by molecular beam epitaxy for light emission on Si substrates.
    Bru-Chevallier C; El Akra A; Pelloux-Gervais D; Dumont H; Canut B; Chauvin N; Regreny P; Gendry M; Patriarche G; Jancu JM; Even J; Noe P; Calvo V; Salem B
    J Nanosci Nanotechnol; 2011 Oct; 11(10):9153-9. PubMed ID: 22400316
    [TBL] [Abstract][Full Text] [Related]  

  • 6. GaSb/GaAs type-II quantum dots grown by droplet epitaxy.
    Liang B; Lin A; Pavarelli N; Reyner C; Tatebayashi J; Nunna K; He J; Ochalski TJ; Huyet G; Huffaker DL
    Nanotechnology; 2009 Nov; 20(45):455604. PubMed ID: 19834245
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet.
    Baik M; Kyhm JH; Kang HK; Jeong KS; Kim JS; Cho MH; Song JD
    Sci Rep; 2021 Apr; 11(1):7699. PubMed ID: 33833327
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy.
    Yuan Q; Liang B; Luo S; Wang Y; Yan Q; Wang S; Fu G; Mazur YI; Maidaniuk Y; Ware ME; Salamo GJ
    Nanotechnology; 2020 Jul; 31(31):315701. PubMed ID: 32303015
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Pushing the band gap envelope: mid-infrared emitting colloidal PbSe quantum dots.
    Pietryga JM; Schaller RD; Werder D; Stewart MH; Klimov VI; Hollingsworth JA
    J Am Chem Soc; 2004 Sep; 126(38):11752-3. PubMed ID: 15382884
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A new route toward light emission from Ge: tensile-strained quantum dots.
    Chen Q; Song Y; Wang K; Yue L; Lu P; Li Y; Gong Q; Wang S
    Nanoscale; 2015 May; 7(19):8725-30. PubMed ID: 25924225
    [TBL] [Abstract][Full Text] [Related]  

  • 11. An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots.
    Qiu F; Qiu W; Li Y; Wang X; Zhang Y; Zhou X; Lv Y; Sun Y; Deng H; Hu S; Dai N; Wang C; Yang Y; Zhuang Q; Hayne M; Krier A
    Nanotechnology; 2016 Feb; 27(6):065602. PubMed ID: 26684716
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Structure/Property Relations in "Giant" Semiconductor Nanocrystals: Opportunities in Photonics and Electronics.
    Navarro-Pardo F; Zhao H; Wang ZM; Rosei F
    Acc Chem Res; 2018 Mar; 51(3):609-618. PubMed ID: 29260851
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.
    Ilahi B; Zribi J; Guillotte M; Arès R; Aimez V; Morris D
    Materials (Basel); 2016 Jun; 9(7):. PubMed ID: 28773633
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping.
    Desplanque L; Coinon C; Troadec D; Ruterana P; Patriarche G; Bonato L; Bimberg D; Wallart X
    Nanotechnology; 2017 Jun; 28(22):225601. PubMed ID: 28480873
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Voltage-Tunable Mid- and Long-Wavelength Dual-Band Infrared Photodetector Based on Hybrid Self-Assembled and Sub-Monolayer Quantum Dots.
    Zhai Y; Gu G; Lu X
    Micromachines (Basel); 2018 Dec; 10(1):. PubMed ID: 30583512
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Towards Interband Cascade lasers on InP Substrate.
    Ryczko K; Andrzejewski J; Sęk G
    Materials (Basel); 2021 Dec; 15(1):. PubMed ID: 35009205
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer.
    Sala EM; Godsland M; Na YI; Trapalis A; Heffernan J
    Nanotechnology; 2021 Nov; 33(6):. PubMed ID: 34731846
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.
    Shen J; Song Y; Lee ML; Cha JJ
    Nanotechnology; 2014 Nov; 25(46):465702. PubMed ID: 25354930
    [TBL] [Abstract][Full Text] [Related]  

  • 19.
    ; ; . PubMed ID:
    [No Abstract]   [Full Text] [Related]  

  • 20.
    ; ; . PubMed ID:
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 8.