121 related articles for article (PubMed ID: 36670090)
1. Sb-Mediated Tuning of Growth- and Exciton Dynamics in Entirely Catalyst-Free GaAsSb Nanowires.
Jeong HW; Ajay A; Yu H; Döblinger M; Mukhundhan N; Finley JJ; Koblmüller G
Small; 2023 Apr; 19(16):e2207531. PubMed ID: 36670090
[TBL] [Abstract][Full Text] [Related]
2. Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality.
Schmiedeke P; Döblinger M; Meinhold-Heerlein MA; Doganlar C; Finley JJ; Koblmüller G
Nanotechnology; 2023 Nov; 35(5):. PubMed ID: 37879325
[TBL] [Abstract][Full Text] [Related]
3. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
Dheeraj DL; Patriarche G; Largeau L; Zhou HL; van Helvoort AT; Glas F; Harmand JC; Fimland BO; Weman H
Nanotechnology; 2008 Jul; 19(27):275605. PubMed ID: 21828712
[TBL] [Abstract][Full Text] [Related]
4. Molecular beam epitaxial growth of GaAsSb/GaAsSbN/GaAlAs core-multishell nanowires for near-infrared applications.
Deshmukh P; Li J; Nalamati S; Sharma M; Iyer S
Nanotechnology; 2019 Jul; 30(27):275203. PubMed ID: 30865932
[TBL] [Abstract][Full Text] [Related]
5. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires.
Koivusalo E; Hilska J; Galeti HVA; Galvão Gobato Y; Guina M; Hakkarainen T
Nanotechnology; 2020 Nov; 31(46):465601. PubMed ID: 32750687
[TBL] [Abstract][Full Text] [Related]
6. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
Yu X; Li L; Wang H; Xiao J; Shen C; Pan D; Zhao J
Nanoscale; 2016 May; 8(20):10615-21. PubMed ID: 27194599
[TBL] [Abstract][Full Text] [Related]
7. Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients.
Huh J; Yun H; Kim DC; Munshi AM; Dheeraj DL; Kauko H; van Helvoort AT; Lee S; Fimland BO; Weman H
Nano Lett; 2015 Jun; 15(6):3709-15. PubMed ID: 25941743
[TBL] [Abstract][Full Text] [Related]
8. Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients.
Huh J; Kim DC; Munshi AM; Dheeraj DL; Jang D; Kim GT; Fimland BO; Weman H
Nanotechnology; 2016 Sep; 27(38):385703. PubMed ID: 27528601
[TBL] [Abstract][Full Text] [Related]
9. A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range.
Ahmad E; Karim MR; Hafiz SB; Reynolds CL; Liu Y; Iyer S
Sci Rep; 2017 Aug; 7(1):10111. PubMed ID: 28860507
[TBL] [Abstract][Full Text] [Related]
10. Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires.
Kang Y; Lin F; Tang J; Dai Q; Hou X; Meng B; Wang D; Wang L; Wei Z
Phys Chem Chem Phys; 2023 Jan; 25(2):1248-1256. PubMed ID: 36530045
[TBL] [Abstract][Full Text] [Related]
11. Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches.
Dubrovskii VG
Nanomaterials (Basel); 2023 Apr; 13(7):. PubMed ID: 37049346
[TBL] [Abstract][Full Text] [Related]
12. New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays.
Ren D; Dheeraj DL; Jin C; Nilsen JS; Huh J; Reinertsen JF; Munshi AM; Gustafsson A; van Helvoort AT; Weman H; Fimland BO
Nano Lett; 2016 Feb; 16(2):1201-9. PubMed ID: 26726825
[TBL] [Abstract][Full Text] [Related]
13. Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization.
Yuan L; Pokharel R; Devkota S; Kuchoor H; Dawkins K; Lee MC; Huang Y; Yarotski D; Iyer S; Prasankumar RP
Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35772308
[TBL] [Abstract][Full Text] [Related]
14. Recent Progress on the Gold-Free Integration of Ternary III-As Antimonide Nanowires Directly on Silicon.
Anyebe EA
Nanomaterials (Basel); 2020 Oct; 10(10):. PubMed ID: 33086569
[TBL] [Abstract][Full Text] [Related]
15. Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy.
Ruhstorfer D; Lang A; Matich S; Döblinger M; Riedl H; Finley JJ; Koblmüller G
Nanotechnology; 2021 Mar; 32(13):135604. PubMed ID: 33238260
[TBL] [Abstract][Full Text] [Related]
16. Recent advances in Sb-based III-V nanowires.
Gao Z; Sun J; Han M; Yin Y; Gu Y; Yang ZX; Zeng H
Nanotechnology; 2019 May; 30(21):212002. PubMed ID: 30708362
[TBL] [Abstract][Full Text] [Related]
17. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
García Núñez C; Braña AF; López N; García BJ
Nano Lett; 2018 Jun; 18(6):3608-3615. PubMed ID: 29739187
[TBL] [Abstract][Full Text] [Related]
18. Site-controlled VLS growth of planar nanowires: yield and mechanism.
Zhang C; Miao X; Mohseni PK; Choi W; Li X
Nano Lett; 2014 Dec; 14(12):6836-41. PubMed ID: 25343224
[TBL] [Abstract][Full Text] [Related]
19. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy.
Zhuang QD; Anyebe EA; Chen R; Liu H; Sanchez AM; Rajpalke MK; Veal TD; Wang ZM; Huang YZ; Sun HD
Nano Lett; 2015 Feb; 15(2):1109-16. PubMed ID: 25559370
[TBL] [Abstract][Full Text] [Related]
20. Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components.
Li H; Tang J; Pang G; Wang D; Fang X; Chen R; Wei Z
RSC Adv; 2019 Nov; 9(65):38114-38118. PubMed ID: 35541770
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
