These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

142 related articles for article (PubMed ID: 36677117)

  • 1. Fabrication and Characterization of In
    Shin SH; Shim JP; Jang H; Jang JH
    Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677117
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect Transistors.
    Seo JH; Yoon YJ; Cho S; Tae HS; Lee JH; Kang IM
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7615-9. PubMed ID: 26726384
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.
    Kong L; Song Y; Kim JD; Yu L; Wasserman D; Chim WK; Chiam SY; Li X
    ACS Nano; 2017 Oct; 11(10):10193-10205. PubMed ID: 28880533
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In
    Yoo HB; Kim SK; Kim J; Yu J; Choi SJ; Kim DH; Kim DM
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4287-4291. PubMed ID: 31968459
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications.
    Cui P; Zeng Y
    Sci Rep; 2022 Oct; 12(1):16683. PubMed ID: 36202953
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Gate-controlled spin-orbit coupling in InAs/InGaAs quantum well structures.
    Kim KH; Park YH; Koo HC; Chang J; Kim YK; Kim HJ
    J Nanosci Nanotechnol; 2014 Jul; 14(7):5212-5. PubMed ID: 24758005
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs.
    Seo JH; Yoon YJ; Cho S; Kang IM; Lee JH
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6070-6076. PubMed ID: 31026910
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer.
    Sala EM; Godsland M; Na YI; Trapalis A; Heffernan J
    Nanotechnology; 2021 Nov; 33(6):. PubMed ID: 34731846
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High mobility In
    Chen C; Holmes SN; Farrer I; Beere HE; Ritchie DA
    J Phys Condens Matter; 2018 Mar; 30(10):105705. PubMed ID: 29451866
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes.
    Zhang Y; Guan M; Liu X; Zeng Y
    Nanoscale Res Lett; 2011 Nov; 6(1):603. PubMed ID: 22112249
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs
    Naseem ; Ahmad Z; Chao RL; Chang HS; Ni CJ; Chen HS; Huang JJ; Chou E; Jan YH; Shi JW
    Opt Express; 2019 May; 27(11):15495-15504. PubMed ID: 31163745
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.
    Vu TKO; Lee KS; Lee SJ; Kim EK
    J Nanosci Nanotechnol; 2018 Sep; 18(9):6239-6243. PubMed ID: 29677773
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Multi-dimensional optimization of In
    Gamel MMA; Ker PJ; Lee HJ; Rashid WESWA; Hannan MA; David JPR; Jamaludin MZ
    Sci Rep; 2021 Apr; 11(1):7741. PubMed ID: 33833263
    [TBL] [Abstract][Full Text] [Related]  

  • 14. The initial stages of ZnO atomic layer deposition on atomically flat In
    Skopin EV; Rapenne L; Roussel H; Deschanvres JL; Blanquet E; Ciatto G; Fong DD; Richard MI; Renevier H
    Nanoscale; 2018 Jun; 10(24):11585-11596. PubMed ID: 29892744
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effects of H
    Choi S; An Y; Lee C; Song J; Nguyen MC; Byun YC; Choi R; McIntyre PC; Kim H
    Sci Rep; 2017 Aug; 7(1):9769. PubMed ID: 28852035
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A High-Performance InGaAs Vertical Electron-Hole Bilayer Tunnel Field Effect Transistor with P
    Liu H; Li P; Zhou X; Wang P; Li Y; Pan L; Zhang W; Li Y
    Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004905
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers.
    Jung JH; Yoon YJ; Cho MS; Kim BG; Jang WD; Kang IM
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6008-6015. PubMed ID: 31026900
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Transport properties in an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As heterostructure coupled superconducting junction.
    Nitta J; Akazaki T; Takayanagi H; Arai K
    Phys Rev B Condens Matter; 1992 Dec; 46(21):14286-14289. PubMed ID: 10003520
    [No Abstract]   [Full Text] [Related]  

  • 19. Comparative study of atomic-layer-deposited stacked (HfO2/Al2O3) and nanolaminated (HfAlOx) dielectrics on In0.53Ga0.47As.
    Mahata C; Byun YC; An CH; Choi S; An Y; Kim H
    ACS Appl Mater Interfaces; 2013 May; 5(10):4195-201. PubMed ID: 23611632
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Optical study of extended-molecular-layer flat islands in lattice-matched In0.53Ga0.47As/InP and In0.53Ga0.47As/In1-xGaxAsyP1-y quantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles.
    Sauer R; Nilsson S; Roentgen P; Heuberger W; Graf V; Hangleiter A; Spycher R
    Phys Rev B Condens Matter; 1992 Oct; 46(15):9525-9537. PubMed ID: 10002761
    [No Abstract]   [Full Text] [Related]  

    [Next]    [New Search]
    of 8.