These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
181 related articles for article (PubMed ID: 36703612)
1. Ferroelectric Wide-Bandgap Metal Halide Perovskite Field-Effect Transistors: Toward Transparent Electronics. Xia J; Qiu X; Liu Y; Chen PA; Guo J; Wei H; Ding J; Xie H; Lv Y; Li F; Li W; Liao L; Hu Y Adv Sci (Weinh); 2023 Apr; 10(10):e2300133. PubMed ID: 36703612 [TBL] [Abstract][Full Text] [Related]
2. Low-Operating-Voltage Two-Dimensional Tin Perovskite Field-Effect Transistors with Multilayer Gate Dielectrics Based on a Fluorinated Copolymer. Li L; Liu X; Guo J; Ji H; Zhang F; Lou Z; Qin L; Hu Y; Hou Y; Teng F J Phys Chem Lett; 2023 Mar; 14(8):2223-2233. PubMed ID: 36820508 [TBL] [Abstract][Full Text] [Related]
3. Room-Temperature Halide Perovskite Field-Effect Transistors by Ion Transport Mitigation. Jeong B; Veith L; Smolders TJAM; Wolf MJ; Asadi K Adv Mater; 2021 Oct; 33(39):e2100486. PubMed ID: 34387400 [TBL] [Abstract][Full Text] [Related]
4. Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain. Pradhan JR; Dasgupta S ACS Appl Mater Interfaces; 2024 Jul; 16(30):39517-39527. PubMed ID: 39012262 [TBL] [Abstract][Full Text] [Related]
5. Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field-Effect Transistors. Liu X; Yu D; Song X; Zeng H Small; 2018 Sep; 14(36):e1801460. PubMed ID: 30048037 [TBL] [Abstract][Full Text] [Related]
6. Tuning Charge Transport in PVDF-Based Organic Ferroelectric Transistors: Status and Outlook. Laudari A; Barron J; Pickett A; Guha S ACS Appl Mater Interfaces; 2020 Jun; 12(24):26757-26775. PubMed ID: 32436693 [TBL] [Abstract][Full Text] [Related]
7. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors. Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585 [TBL] [Abstract][Full Text] [Related]
8. Investigation of Electrode Electrochemical Reactions in CH Wang J; Senanayak SP; Liu J; Hu Y; Shi Y; Li Z; Zhang C; Yang B; Jiang L; Di D; Ievlev AV; Ovchinnikova OS; Ding T; Deng H; Tang L; Guo Y; Wang J; Xiao K; Venkateshvaran D; Jiang L; Zhu D; Sirringhaus H Adv Mater; 2019 Aug; 31(35):e1902618. PubMed ID: 31293012 [TBL] [Abstract][Full Text] [Related]
9. Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory. Kim KL; Lee W; Hwang SK; Joo SH; Cho SM; Song G; Cho SH; Jeong B; Hwang I; Ahn JH; Yu YJ; Shin TJ; Kwak SK; Kang SJ; Park C Nano Lett; 2016 Jan; 16(1):334-40. PubMed ID: 26618802 [TBL] [Abstract][Full Text] [Related]
10. Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors. Cho J; Hwang S; Ko DH; Chung S Materials (Basel); 2019 Oct; 12(20):. PubMed ID: 31635035 [TBL] [Abstract][Full Text] [Related]
11. Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors. Choi J; Yoo H Polymers (Basel); 2023 Mar; 15(6):. PubMed ID: 36987175 [TBL] [Abstract][Full Text] [Related]
12. Ambient-Stable 2D Dion-Jacobson Phase Tin Halide Perovskite Field-Effect Transistors with Mobility over 1.6 Cm Qiu X; Xia J; Liu Y; Chen PA; Huang L; Wei H; Ding J; Gong Z; Zeng X; Peng C; Chen C; Wang X; Jiang L; Liao L; Hu Y Adv Mater; 2023 Nov; 35(44):e2305648. PubMed ID: 37603829 [TBL] [Abstract][Full Text] [Related]
13. Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics. Yang S; Wen J; Wu Y; Zhu H; Liu A; Hu Y; Noh YY; Chu J; Li W Small; 2024 Jan; 20(1):e2304626. PubMed ID: 37641178 [TBL] [Abstract][Full Text] [Related]
14. Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics. Ming Z; Sun H; Wang H; Sheng Z; Wang Y; Zhang Z ACS Appl Mater Interfaces; 2024 Aug; 16(34):45131-45138. PubMed ID: 39145480 [TBL] [Abstract][Full Text] [Related]
15. The ambipolar evolution of a high-performance WSe Li D; Wang X; Chen Y; Zhu S; Gong F; Wu G; Meng C; Liu L; Wang L; Lin T; Sun S; Shen H; Wang X; Hu W; Wang J; Sun J; Meng X; Chu J Nanotechnology; 2018 Mar; 29(10):105202. PubMed ID: 29384728 [TBL] [Abstract][Full Text] [Related]
16. Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics. Byeon HH; Kim K; Kim W; Yi H Sci Rep; 2017 Jul; 7(1):5981. PubMed ID: 28729686 [TBL] [Abstract][Full Text] [Related]
17. Black Phosphorus/Ferroelectric P(VDF-TrFE) Field-Effect Transistors with High Mobility for Energy-Efficient Artificial Synapse in High-Accuracy Neuromorphic Computing. Dang Z; Guo F; Duan H; Zhao Q; Fu Y; Jie W; Jin K; Hao J Nano Lett; 2023 Jul; 23(14):6752-6759. PubMed ID: 37283505 [TBL] [Abstract][Full Text] [Related]
18. High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature. Sun J; Lu A; Wang L; Hu Y; Wan Q Nanotechnology; 2009 Aug; 20(33):335204. PubMed ID: 19636097 [TBL] [Abstract][Full Text] [Related]
19. Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces. Ward JW; Smith HL; Zeidell A; Diemer PJ; Baker SR; Lee H; Payne MM; Anthony JE; Guthold M; Jurchescu OD ACS Appl Mater Interfaces; 2017 May; 9(21):18120-18126. PubMed ID: 28485580 [TBL] [Abstract][Full Text] [Related]
20. Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films. Eguchi R; He X; Hamao S; Goto H; Okamoto H; Gohda S; Sato K; Kubozono Y Phys Chem Chem Phys; 2013 Dec; 15(47):20611-7. PubMed ID: 24185947 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]