These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

167 related articles for article (PubMed ID: 36709447)

  • 1. Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator.
    Li J; Zhang Y; Wang J; Yang H; Zhou X; Chan M; Wang X; Lu L; Zhang S
    ACS Appl Mater Interfaces; 2023 Feb; 15(6):8666-8675. PubMed ID: 36709447
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Ultra-thin gate insulator of atomic-layer-deposited AlO
    Li J; Guan Y; Li J; Zhang Y; Zhang Y; Chan M; Wang X; Lu L; Zhang S
    Nanotechnology; 2023 Apr; 34(26):. PubMed ID: 36962937
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
    ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.
    Yang H; Zhou X; Fu H; Chang B; Min Y; Peng H; Lu L; Zhang S
    ACS Appl Mater Interfaces; 2021 Mar; 13(9):11442-11448. PubMed ID: 33591715
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors.
    Ko JB; Cho SI; Park SK
    ACS Appl Mater Interfaces; 2023 Oct; 15(40):47799-47809. PubMed ID: 37769061
    [TBL] [Abstract][Full Text] [Related]  

  • 6. High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al
    Shao Y; Wu X; Zhang MN; Liu WJ; Ding SJ
    Nanoscale Res Lett; 2019 Apr; 14(1):122. PubMed ID: 30941527
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
    Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
    ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Thermally Activated Defect Engineering for Highly Stable and Uniform ALD-Amorphous IGZO TFTs with High-Temperature Compatibility.
    Kim DG; Lee WB; Lee S; Koh J; Kuh B; Park JS
    ACS Appl Mater Interfaces; 2023 Aug; 15(30):36550-36563. PubMed ID: 37489641
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Amorphous IGZO TFT with High Mobility of ∼70 cm
    Sheng J; Hong T; Lee HM; Kim K; Sasase M; Kim J; Hosono H; Park JS
    ACS Appl Mater Interfaces; 2019 Oct; 11(43):40300-40309. PubMed ID: 31584254
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability.
    Kim DG; Choi H; Kim YS; Lee DH; Oh HJ; Lee JH; Kim J; Lee S; Kuh B; Kim T; Kim HY; Park JS
    ACS Appl Mater Interfaces; 2023 Jul; 15(26):31652-31663. PubMed ID: 37350067
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses.
    Wang D; Furuta M
    Beilstein J Nanotechnol; 2018; 9():2573-2580. PubMed ID: 30425903
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.
    Yu H; Zhang L; Li XH; Xu HY; Liu YC
    J Nanosci Nanotechnol; 2016 Apr; 16(4):3659-63. PubMed ID: 27451684
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
    Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.
    Wang D; Zhao W; Li H; Furuta M
    Materials (Basel); 2018 Apr; 11(4):. PubMed ID: 29621154
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors.
    Ko JB; Lee SH; Park KW; Park SK
    RSC Adv; 2019 Nov; 9(62):36293-36300. PubMed ID: 35540589
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Role of
    Prasad OK; Mohanty SK; Wu CH; Yu TY; Chang KM
    Nanotechnology; 2021 Jul; 32(39):. PubMed ID: 34144544
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors.
    Stallings K; Smith J; Chen Y; Zeng L; Wang B; Di Carlo G; Bedzyk MJ; Facchetti A; Marks TJ
    ACS Appl Mater Interfaces; 2021 Apr; 13(13):15399-15408. PubMed ID: 33779161
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.
    Liu J; Guo J; Yang W; Wang C; Yuan B; Liu J; Wu Z; Zhang Q; Liu D; Chen H; Yu Y; Liu S; Shao G; Yao Z
    ACS Appl Mater Interfaces; 2020 Sep; 12(39):43950-43957. PubMed ID: 32886486
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors.
    Oh C; Kim T; Ju MW; Kim MY; Park SH; Lee GH; Kim H; Kim S; Kim BS
    Materials (Basel); 2023 Sep; 16(18):. PubMed ID: 37763439
    [TBL] [Abstract][Full Text] [Related]  

  • 20. A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C.
    Peng C; Huang H; Xu M; Chen L; Li X; Zhang J
    Nanomaterials (Basel); 2022 Nov; 12(22):. PubMed ID: 36432306
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.